×

SOI pass-gate disturb solution

  • US 6,498,058 B1
  • Filed: 05/24/2000
  • Issued: 12/24/2002
  • Est. Priority Date: 09/30/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating a field effect transistor, comprising fabricating the field effect transistor in a substrate with a source, a drain and a gate, wherein the body of the field effect transistor is electrically floating and the transistor is substantially electrically isolated from the substrate, and providing a high resistance path coupling the electrically floating body of the field effect transistor to the gate of the field effect transistor.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×