Method of increasing the conductivity of a transparent conductive layer

• US 6,498,087 B2
• Filed: 11/29/2001
• Issued: 12/24/2002
• Est. Priority Date: 12/01/2000
• Status: Expired due to Fees

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: French, Ian D., Van Der Zaag, Pieter J., Meulenkamp, Eric A.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): KIELIN, ERIK J
• Application Number:
  US09/998,031
• Publication Number:
  US 20020048834A1
• Time in Patent Office: 390 Days
• Field of Search: 438/609, 438/652, 438/675, 438/677, 438/678, 438/29, 438/30
• US Class Current: 438/609
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line

Abstract

A method of increasing the conductivity of a transparent conductive layer, in which a photoresist layer which patterns the transparent layer is given tapered edges and is partially etched. The partial etching exposing the edge regions of the underlying transparent conductor layer, which are the selectively plated. This method has a single patterning stage of the transparent layer, but uses partial etching of a tapered resist layer in order to expose a small edge region of the transparent layer for coating with a conductive layer (which can be opaque).

Claims

1. A method of increasing the conductivity of a transparent conductive layer, comprising:

depositing and patterning a photoresist layer into a configuration corresponding to the desired pattern of the transparent conductive layer; and

patterning the transparent conductor layer using the photoresist layer, wherein the edge regions of the photoresist layer are provided with a taper, the method further comprising the steps of;

partially etching the photoresist layer such that at least part of the edge regions are completely removed thereby exposing the underlying transparent conductor layer;

selectively plating the exposed parts of the transparent conductor layer with a metallic layer.

2. A method according to claim 1, wherein the edge regions of the photoresist layer are provided with a taper before patterning the transparent conductor layer using the photoresist layer.

3. A method according to claim 1, wherein the tapered edge regions are provided by a photoresist reflow technique.

4. A method according to claim 1, wherein the step of selectively plating comprises:

activating the exposed parts of the transparent conductive layer;

removing the partially etched photoresist layer;

performing electroless plating of the activated areas of the transparent conductive layer.

5. A method according to claim 1, wherein the exposed parts of the transparent conductive layer are activated for electroless plating and wherein the step of selectively plating comprises:

performing electroless plating of the exposed parts of the transparent conductive layer;

removing the partially etched photoresist layer.

6. A method according to claim 5, wherein the transparent conductive layer is activated before the step of depositing and patterning the photoresist layer.

7. A method according to claim 6, wherein a layer of activating material is deposited over the surface of the transparent conductive layer.

8. A method as claimed in claim 1, wherein the metallic layer comprises copper or silver.

9. A method as claimed in claim 1, wherein the transparent conductor layer comprises a conductive oxide.

10. A method as claimed in claim 9, wherein the oxide comprises ITO.

11. The method of claim 2, wherein the tapered edge regions are provided by a photoresist reflow technique.

12. The method of claim 2, wherein the step of selectively plating includes:

activating the exposed parts of the transparent conductive layer;

removing the partially etched photoresist player;

performing electroless plating of the activated areas of the transparent conductive layer.

13. The method of claim 3, wherein the step of selectively plating includes:

activating the exposed parts of the transparent conductive layer;

removing the partially etched photoresist player;

performing electroless plating of the activated areas of the transparent conductive layer.

14. The method of claim 2, wherein the exposed parts of the transparent conductive layer are activated for electroless plating and the step of selectively plating includes:

performing electroless plating of the exposed parts of the transparent conductive layer; and

removing the partially etched photoresist layer.

15. The method of claim 3, wherein the exposed parts of the transparent conductive layer are activated for electroless plating and the step of selectively plating includes:

performing electroless plating of the exposed parts of the transparent conductive layer; and

removing the partially etched photoresist layer.

16. The method of claim 2, wherein the metallic layer includes at least one of copper and silver.

17. The method of claim 1, wherein the metallic layer includes at least one of copper and silver.

18. The method of claim 4, wherein the metallic layer includes at least one of copper and silver.

19. The method of claim 5, wherein the metallic layer includes at least one of copper and silver.

20. The method of claim 7, wherein the metallic layer includes at least one of copper and silver.

21. The method of claim 2, wherein the metallic layer includes a conductive oxide.

22. The method of claim 3, wherein the metallic layer includes a conductive oxide.

23. The method of claim 4, wherein the metallic layer includes a conductive oxide.

24. The method of claim 5, wherein the metallic layer includes a conductive oxide.

25. The method of claim 7, wherein the metallic layer includes a conductive oxide.