Method and apparatus for achieving uniform low dark current with CMOS photodiodes

• US 6,498,331 B1
• Filed: 12/21/1999
• Issued: 12/24/2002
• Est. Priority Date: 12/21/1999
• Status: Expired due to Fees

• Current Assignee: RE Secured Networks LLC
• Original Assignee: Pictos Technologies Inc. (f/k/a Imperium IP Holdings (Cayman), Ltd.) (Imperium (IP) Holdings Incorporated)
• Inventors: Kozlowski, Lester J., Mann, Richard A.
• Primary Examiner(s): PYO, KEVIN K
• Application Number:
  US09/468,696
• Time in Patent Office: 1,099 Days
• Field of Search: 250/370.08, 250/370.14, 250/208.1, 250/214.R, 257/291, 257/292, 257/443, 348/300, 348/301, 348/302, 348/307, 348/308
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H04N 25/63 applied to dark current
• CPC Class Codes: H04N 25/709 Circuitry for control of the power supply
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

An apparatus and method for achieving uniform low dark currents with CMOS photodiodes. A threshold voltage of a reset FET is set to an appropriate value such that the dark current from a photodiode is actively removed through the reset FET during signal integration. This reduces the dark current by over 3 orders of magnitude as compared to conventional active pixel sensors, without requiring pinned photodiodes.

Claims

1. An apparatus for reducing dark current associated with a CMOS photodiode, the apparatus comprising;

a reset transistor connected to the photodiode, the reset transistor having a threshold voltage set to a value that allows dark current to be removed during signal integration; and

wherein the reset transistor is a MOSFET, and the threshold voltage is set according to the following equation;

$V_{T_{\mathrm{Optimum}}}=V_x\left[\ln \left(\frac{\mathrm{\mu <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>\frac{W_{\mathrm{rst}}}{L_{\mathrm{rst}}}<br><br>C_{\mathrm{ox}}<br><br>V_x^2}{2<br><br>J_{\mathrm{dark}}<br><br>A_{\det }}\right)\right]-V_x$

where V_x=nkT/e

n is the ideality of a reset MOSFET, J_dark is a dark current density for the photodetector, A_det is a photodetector area., μ

is a MOSFET mobility, W_rst is a width of the reset MOSFET, L_rst is a length of the reset MOSFET, and C_ox is a MOSFET capacitance density.

2. The apparatus of claim 1, wherein the photodiode is a substrate diode with silicide cleared.

3. The apparatus of claim 1, wherein the photodiode is formed at the same time as a lightly doped drain (LDD) implant of an n-type MOSFET, creating an n-on-p photodiode E junction in a p-type substrate.

4. The apparatus of claim 1, wherein the dark current through the photodiode that is removed by the reset transistor is large enough to provide adequate noise performance and matching characteristics.

5. The apparatus of claim 1, wherein the threshold voltage is set to approximately 0.76 volts for a typical mixed signal 0.5 pm CMOS process.

6. The apparatus of claim 1, wherein the threshold voltage is optimized for a particular CMOS process based upon standard MOSFET electrical parameters associated with the particular CMOS process.

7. A method for reducing dark current associated with a CMOS photodiode in an active pixel sensor, the method comprising:

setting, a threshold voltage of a reset transistor to a predetermined value; and

removing the dark current via subthreshold conduction during signal integration,

wherein the predetermined value is set according to the following equation;

$V_{T_{\mathrm{Optimum}}}=V_x\left[\ln \left(\frac{\mathrm{\mu <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>\frac{W_{\mathrm{rst}}}{L_{\mathrm{rst}}}<br><br>C_{\mathrm{ox}}<br><br>V_x^2}{2<br><br>J_{\mathrm{dark}}<br><br>A_{\det }}\right)\right]-V_x$

where V_x=nkT/e

n is the ideality of a reset MOSFET, J_dark is a dark current density for the photodetector, A_det is a photodetector area, μ

is a MOSFET mobility, W_rst is a width of the reset MOSFET, L_rst is a length of the reset MOSFET, and C_ox is a MOSFET capacitance density.

8. The method of claim 7, wherein the predetermined value is approximately 0.76 volts for a typical mixed signal 0.5 pm CMOS process.

9. The method claim 7, wherein the threshold voltage is optimized for a particular CMOS process based upon standard MOSFET electrical parameters associated with the particular CMOS process.

10. The method of claim 7, wherein the dark current through the photodiode that is 2 removed by the reset transistor is large enough to provide adequate noise performance and 3 matching characteristics.

11. A CMOS active pixel sensor comprising:

a photodetector producing a dark current;

an amplifier FET connected to the photodetector;

a reset FET, having a threshold voltage VT, connected to a node formed by the photodiode and the amplifier FET; and

an access FET;

wherein the threshold voltage VT is set to a predetermined value to drain off the dark current through the reset FET during integration and the threshold voltage is set according to the following equation;

$V_{T_{\mathrm{Optimum}}}=V_x\left[\ln \left(\frac{\mathrm{\mu <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>\frac{W_{\mathrm{rst}}}{L_{\mathrm{rst}}}<br><br>C_{\mathrm{ox}}<br><br>V_x^2}{2<br><br>J_{\mathrm{dark}}<br><br>A_{\det }}\right)\right]-V_x$

where V_x=nkT/e

n is the ideality of a reset MOSFET, J_dark is a dark current density for the photodetector, A_det is a photodetector area, μ

is a MOSFET mobility, W_rst is a width of the reset MOSFET, L_rst is a length of the reset MOSFET, and C_ox is a MOSFET capacitance density.

12. The CMOS active pixel sensor of claim 11, wherein the photodetector is a photodiode.

13. The CMOS active pixel sensor of claim 12, wherein the photodiode is a substrate diode with silicide cleared.

14. The CMOS active pixel sensor of claim 13, wherein the photodiode is formed at the same time as a lightly doped drain (LDD) implant of an n-type MOSFET, creating an n on -p photodiode junction in a p-type substrate.

15. The CMOS active pixel sensor of claim 11, wherein the dark current through the photodiode that is removed by the reset transistor is large enough to provide adequate noise performance and matching characteristics.

16. The CMOS active pixel sensor of claim 11, wherein the threshold voltage is set to approximately 0.76 volts for a 0.5 pm CMOS process.

17. The CMOS active pixel sensor of claim 11, wherein the threshold voltage is optimized for a particular CMOS process based upon standard MOSFET electrical parameters associated with the particular CMOS process.

18. A CMOS imager comprising a plurality of active pixel sensors, each active pixel sensor comprising:

a photodiode producing a dark current;

an amplifier FET connected to the photodiode;

a reset FET, having a threshold voltage VT, connected to a node formed by the photodiode and the amplifier FET; and

an access FET;

wherein the threshold voltage VT is set to a predetermined value such that a subthreshold conduction level of the reset FET is comparable to the photodetector dark current.

19. A CMOS imager having a plurality of active pixel sensors, each active pixel sensor of the type having a photodiode that produces a dark current, and a reset transistor, the improvement characterized by a predetermined threshold voltage connected to the reset transistor, wherein the value of the predetermined threshold voltage allows the dark current to be removed through the reset transistor during photocurrent integration and where a subthreshold conduction level of the reset FET is comparable to the photodetector dark current.