Integrated light sensors with back reflectors for increased quantum efficiency

• US 6,498,336 B1
• Filed: 11/15/2000
• Issued: 12/24/2002
• Est. Priority Date: 11/15/2000
• Status: Expired due to Term

• Current Assignee: Sony Electronics Inc. (Sony Group Corp.)
• Original Assignee: Pixim, Inc. (Sony Group Corp.)
• Inventors: Tian, Hui, Motta, Ricardo
• Primary Examiner(s): Allen, Stephone
• Assistant Examiner(s): HILL, BRADFORD K
• Application Number:
  US09/713,151
• Time in Patent Office: 769 Days
• Field of Search: 250/214.1, 257/436, 257/291, 257/14, 257/19, 257/21, 257/98, 257/294, 257/432, 257/435
• US Class Current: 250/214.1
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device

Abstract

An image (or other light) sensor has a reflective element under each light-sensing element. The reflective element is positioned to reflect incident light that passes through the light-sensing element without being absorbed, back towards the light-sensing element for a second chance at being absorbed. The present invention increases the effective quantum efficiency of each light-sensing element without having to increase the thickness of the absorption region within the light-sensing element. In one embodiment, each reflective element is a discrete mirror that is positioned within the sensor packaging adjacent to (e.g., below) the integrated image sensor. In another embodiment, each reflective element is an integral part of the integrated circuit that contains the image sensor, such as a light-reflecting region formed within the substrate below the corresponding light-sensing element.

Claims

1. A light sensor comprising:

a light-sensing element formed on a substrate, the light-sensing element designed to generate an electrical signal in response to incident light absorbed within the light-sensing element; and

a light-reflecting element positioned in relation to the light-sensing element to reflect light transmitted through the light-sensing element back towards the light-sensing element to increase an effective quantum efficiency of the light-sensing element, wherein;

the light-reflecting element is an integrated light-reflecting region formed on or within the substrate; and

the substrate comprises silicon and the light-reflecting region comprises a silicon oxide, wherein light is reflected from an interface between the silicon and the silicon oxide; and

wherein an integrated light-reflecting vertical via structure formed between the light-sensing element and the light-reflecting region to help direct the reflected light back towards the light-sensing element, while helping to block stray light corresponding to other light-sensing elements in the sensor.

2. The light sensor of claim 1, wherein the substrate has a plurality of light-sensing elements, each having a corresponding light-reflecting element.

3. The light sensor of claim 1, wherein the light-sensing element comprises a photodiode formed within an epi layer formed on the substrate.

4. The light sensor of claim 1, wherein the light-reflecting element has a curved shape that focuses the reflected light towards the light-sensing element.

5. The light sensor of claim 1, wherein:

the substrate has a plurality of light-sensing elements, each having a corresponding light-reflecting element; and

the light-sensing element comprises a photodiode formed within an epi layer formed on the substrate.

6. A method comprising:

forming a light-sensing element on a substrate, the light-sensing element designed to generate an electrical signal when incident light is absorbed therein; and

positioning a light-reflecting element in relation to the light-sensing element to reflect light transmitted through the light-sensing element back towards the light-sensing element to increase an effective quantum efficiency of the light-sensing element, wherein;

the light-reflecting element is an integrated light-reflecting region formed on or within the substrate; and

the substrate comprises silicon and the light-reflecting region comprises a silicon oxide, wherein light is reflected from an interface between the silicon and the silicon oxide; and

forming an integrated light-reflecting vertical via structure between the light-sensing element and the light-reflecting region to help direct the reflected light back towards the light-sensing element, while helping to block stray light corresponding to other light-sensing elements in the sensor.

7. The method of claim 6, wherein the substrate has a plurality of light-sensing elements, each having a corresponding light-reflecting element.

8. The method of claim 6, wherein the light-sensing element comprises a photodiode formed within an epi layer formed on the substrate.

9. The method of claim 6, wherein the light-reflecting element has a curved shape that focuses the reflected light towards the light-sensing element.

10. The method of claim 6, wherein:

the substrate has a plurality of light-sensing elements, each having a corresponding light-reflecting element; and

the light-sensing element comprises a photodiode formed within an epi layer formed on the substrate.

11. A light sensor comprising:

(a) a light-sensing element formed on a substrate, the light-sensing element designed to generate an electrical signal in response to incident light absorbed within the light-sensing element; and

(b) a light-reflecting element positioned in relation to the light-sensing element to reflect light transmitted through the light-sensing element back towards the light-sensing element to increase an effective quantum efficiency of the light-sensing element, wherein the light-reflecting element comprises a mirror distinct from the substrate and positioned adjacent to the substrate within packaging for the sensor.

12. The light sensor of claim 11, wherein the light-reflecting element has a curved shape that focuses the reflected light towards the light-sensing element.

13. The light sensor of claim 11, further comprising an integrated light-reflecting via structure with vertical walls formed between the light-sensing element and the light-reflecting element to help direct the reflected light back towards the light-sensing element, while helping to block stray light corresponding to other light-sensing elements in the sensor.

14. A light sensor comprising:

a light-sensing element formed on a substrate, the light-sensing element designed to generate an electrical signal in response to incident light absorbed within the light-sensing element; and

a light-reflecting element positioned below the light-sensing element to reflect light transmitted through the light-sensing element back towards the light-sensing element to increase an effective quantum efficiency of the light-sensing element, wherein the light-reflecting element has a curved shape that focuses the reflected light towards the light-sensing element; and

an integrated light-reflecting via structure with vertical walls formed between the light-sensing element and the light-reflecting element to help direct the reflected light back towards the light-sensing element, while helping to block stray light corresponding to other light-sensing elements in the sensor.

15. The light sensor of claim 14, wherein:

the light-reflecting element is an integrated light-reflecting region formed on or within the substrate; and

the substrate comprises silicon and the light-reflecting region comprises a silicon oxide, wherein light is reflected from an interface between the silicon and the silicon oxide.

16. A light sensor comprising:

(a) a light-sensing element formed on a substrate, the light-sensing element designed to generate an electrical signal in response to incident light absorbed within the light-sensing element;

(b) a light-reflecting element positioned in relation to the light-sensing element to reflect light transmitted through the light-sensing element back towards the light-sensing element to increase an effective quantum efficiency of the light-sensing element; and

(c) an integrated light-reflecting via structure distinct from the light-reflecting element, the via structure having vertical walls formed between the light-sensing element and the light-reflecting element to help direct the reflected light back towards the light-sensing element, while helping to block stray light corresponding to other light-sensing elements in the sensor.

17. The light sensor of claim 16, wherein:

the light-reflecting element is an integrated light-reflecting region formed on or within the substrate; and

the substrate comprises silicon and the light-reflecting region comprises a silicon oxide, wherein light is reflected from an interface between the silicon and the silicon oxide.

18. The light sensor of claim 16, wherein the light-reflecting element has a curved shape that focuses the reflected light towards the light-sensing element.

19. The light sensor of claim 16, wherein the light-reflecting element is a mirror distinct from the substrate and positioned adjacent to the substrate within packaging for the sensor.