Coupled-well structure for transport channel in field effect transistors

• US 6,498,360 B1
• Filed: 02/29/2000
• Issued: 12/24/2002
• Est. Priority Date: 02/29/2000
• Status: Expired due to Fees

• Current Assignee: Connecticut Research Foundation University of
• Original Assignee: University of Connecticut (State of Connecticut)
• Inventors: Heller, Evan K., Jain, Faquir C.
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): Kang, Donghee
• Application Number:
  US09/516,170
• Time in Patent Office: 1,029 Days
• Field of Search: 257/192, 257/194, 257/195, 257/17, 257/19, 257/20, 257/22, 257/24, 257/27, 438/285, 438/590, 438/167, 438/172
• US Class Current: 257/194
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/0891 of field-effect transistors with Schottky gate
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H01L 29/7784 with delta or planar doped donor layer H01L29/7785 takes precedence

Abstract

Two or more coupled sub-wells are inserted in the quantum well region of a MODFET to move the electron/hole gas away from the interface between the spacer layer and the well region. The channel can be constructed with a wire cross-section to confine the electron/hole gas in two dimensions, thereby reducing the scattering and improving the device performance. Structures with supply layer contacts, along with their application are described. Laterally coupled quantum wire MODFETs are also disclosed. The insertion of a coupled-well transport channel is applicable for Si MOSFETs in improving the high frequency performance.

Claims

1. A modulation-doped field-effect transistor (MODFET), comprising multiple layers of:

a semi-insulating substrate;

a first p-doped layer grown over said substrate;

a not-intentionally-doped (NID) well grown over said first p-doped layer,

said non-intentionally-doped (NID) well having at least two coupled sub-wells sandwiching a barrier layer;

an undoped spacer layer grown over said NID well;

an electron supply layer grown over said spacer layer;

a cap layer grown over said electron supply layer;

a source diffusion through said cap layer to said first p-doped layer to form the source of said MODFET;

a drain diffusion through said cap layer to said first p-doped layer to form the drain of said MODFET; and

a gate deposited over said cap layer between said drain and said source to from the gate of said MODFET.

2. The MODFET as claimed in claim 1, wherein said first p-doped layer, said barrier layer, said spacer layer, and said cap layer are selected from the group of semiconductor materials consisting of InAlAs—

InGaAs, GaAs—

InGaAs, InGaN—

GaN, AlGaN—

InGaN and Si—

SiGe.

3. The MODFET as claimed in claim 1, wherein said first p-doped layer is InAlAs, said NID well is InGaAs;

said undoped spacer layer is InAlAs, said supply layer is n-InAlAs, and cap layer is n-InGaAs.

4. The MODFET as claimed in claim 1, wherein the supply layer is obtained by delta-doping on an undoped layer.

5. The MODFET as claimed in claim 3, wherein said first p-doped layer is about 1 μ

m thick, said NID well is 100 Angstrom (Å

) thick, said spacer layer is 30 Å

thick, said undoped supply layer with delta doping is 205 Å

thick, and said cap layer is 40 Å

thick.

6. The MODFET as claimed in claim 1, wherein there are two said coupled sub-wells.

7. The MODFET as claimed in claim 6, wherein said coupled sub-wells are symmetric, and said sub-wells have strained lattice.

8. The MODFET as claimed in claim 6, wherein said sub-wells are asymmetric, and said sub-wells have strained lattice.

9. The MODFET as claimed in claim 7, wherein said sub-wells are made of InGaAs separated by InAlAs.

10. The MODFET as claimed in claim 7, wherein said InGaAs is 45 Å

thick and said InAlAs is 15 Å

.

11. The MODFET as claimed in claim 8, wherein said coupled sub-wells are made of InGaAs separated by InAlAs.

12. The MODFET as claimed in claim 11, wherein the sub-well closer to the n-delta-doped layer is 20 Å

, the sub-well away from the n-delta-doped layer is 65 Å and

the InAlAs barrier is 15 Å

.

13. The MODFET as claimed in claim 1, wherein the multiple layers are segmented by at least two potential barrier regions in the transverse x-direction to form two end sections and at least one middle quantum wire channel.

14. The MODFET as claimed in claim 13, wherein said potential barrier regions are of InAlAs.

15. The MODFET as claimed in claim 13, wherein there are two said potential barrier regions.

16. The MODFET as claimed in claim 13, wherein there are three barrier regions to form two coupled parallel channels.

17. The MODFET as claimed in claim 16, wherein each of said channels can be individually turned on and off.

18. The MODFET as claimed in claim 1 with p-cap layer over the electron supply (n-type) layer, the said p-cap layer comprising an ohmic contact.

19. The MODFET as claimed in claim 18, wherein said cap layer and the supply layer form a reverse-biased junction via the cap and supply layer contacts.

20. The MODFET as claimed in claim 19, further comprising a surface acoustic wave transducer, a set of charge injecting and collecting electrodes, is formed on multiple quantum wells, and together forming a heterostructure acoustic charge transport (HACT) spatial light modulator.

21. The MODFET as claimed in claim 19, where the multiple layers are realized using InGaAs and InAlAs, the multiple quantum wells are InGaAsP—

InP, and the spatial light modulator is operating at 1.55 micron.

22. The heterostructure acoustic charge transport (HACT) spatial light modulator claimed in claim 20, where the multiple layers are realized using InGaN and AlGaN, the multiple quantum wells are InGaN—

GaN, and the spatial light modulator is operating at in the blue and ultraviolet regime.

23. The MODFET as claimed in claim 13, wherein the channel length in a z-direction is 200 Å

or less to form a quantum dot.

24. The MODFET as claimed in claim 15, wherein the channel length in the z-direction is 200 Å

or less to form a quantum dot.

25. The MODFET as claimed in claim 16, wherein the channel length in the z-direction is 200 Å

or less to form a coupled quantum dot.

26. The MODFET as claimed in claim 7, wherein the coupled sub-wells are made of Si_xGe₁₋

x and separated by a Si or Si_yGe<sub>1−

y</sub> (y>

x) barrier layer.

27. The MODFET as claimed in claim 8, wherein the coupled sub-wells are made of Si_xGe₁₋

x and separated by a Si or Si_yGe<sub>1−

y</sub> (y>

x) barrier layer.