SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
First Claim
1. A silicon-on-insulator (SOI) semiconductor integrated circuit formed on an SOI substrate including a supporting substrate, a buried insulating layer on the supporting substrate and a semiconductor layer of a first conductivity type on the buried insulating layer, the integrated circuit comprising:
- at least one isolated transistor active region comprising a predetermined region of the semiconductor layer;
a body line of the first conductivity type disposed at one side of the transistor active region, the body line including a portion of the semiconductor layer;
an isolation layer surrounding sidewalls of the transistor active region and the body line, the isolation layer being in contact with the buried insulating layer;
a body extension of the first conductivity type extended from a predetermined sidewall of the transistor active region and connected to the body line, the body extension being thinner than the transistor active region;
a body insulating layer formed on the body extension; and
an insulated gate pattern crossing over the transistor active region, the insulated gate pattern overlapping with the body insulating layer.
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Accused Products
Abstract
A silicon-on-insulator (SOD integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.
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Citations
14 Claims
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1. A silicon-on-insulator (SOI) semiconductor integrated circuit formed on an SOI substrate including a supporting substrate, a buried insulating layer on the supporting substrate and a semiconductor layer of a first conductivity type on the buried insulating layer, the integrated circuit comprising:
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at least one isolated transistor active region comprising a predetermined region of the semiconductor layer;
a body line of the first conductivity type disposed at one side of the transistor active region, the body line including a portion of the semiconductor layer;
an isolation layer surrounding sidewalls of the transistor active region and the body line, the isolation layer being in contact with the buried insulating layer;
a body extension of the first conductivity type extended from a predetermined sidewall of the transistor active region and connected to the body line, the body extension being thinner than the transistor active region;
a body insulating layer formed on the body extension; and
an insulated gate pattern crossing over the transistor active region, the insulated gate pattern overlapping with the body insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
a source region formed at the transistor active region and located at one side of the gate pattern; and
a drain region formed at the transistor active region and located at the other side of the gate pattern, the source and drain regions having a second conductivity type opposite to the first conductivity type.
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10. The silicon-on-insulator (SOI) semiconductor integrated circuit of claim 9, further comprising a metal silicide layer formed on the source and drain regions.
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11. The silicon-on-insulator (SOI) semiconductor integrated circuit of claim 1, further comprising one of a ground line and a power line running over the body line, the one of the ground line and the power line being electrically connected to the body line.
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12. The silicon-on-insulator (SOI) semiconductor integrated circuit of claim 1, wherein the body line is a straight line.
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13. The silicon-on-insulator (SOD semiconductor integrated circuit of claim 1, wherein the at least one transistor active region comprises a plurality of transistor active regions.
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14. The silicon-on-insulator (SOD semiconductor integrated circuit of claim 13, wherein the plurality of transistor active regions are disposed at one side or both sides of the body line.
Specification