Conductive coupling of electrical structures to a semiconductor device located under a buried oxide layer
First Claim
1. An electronic structure, comprising:
- a bulk semiconductor substrate having a semiconductor device, wherein the semiconductor device includes M diffusions, wherein M is at least 2, wherein a first diffusion of the M diffusions is a P+ diffusion, and wherein a second diffusion of the M diffusions is a N+ diffusion;
a silicon-on-insulator (SOI) structure on the bulk semiconductor substrate, wherein the SOI structure includes an insulator layer on the bulk semiconductor substrate and a semiconductor layer on the insulator layer; and
M conductive plugs self-aligned with the M diffusions and extending through a portion of the SOI layer such that an end of each conductive plug is in conductive contact with a corresponding diffusion of the M diffusions.
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Abstract
A method and structure for conductively coupling electrical structures to a semiconductor device located under a silicon on insulator (SOI) layer. The SOI layer is formed on a bulk semiconductor substrate. A trench structure through the SOI layer is formed, wherein an end of the trench structure interfaces with the bulk semiconductor substrate. A semiconductor device is formed in the bulk semiconductor substrate, wherein the semiconductor device includes P+ and N+ diffusions. Conductive plugs are formed through the trench structure such that the conductive plugs are self-aligned with, and in conductive contact with, the diffusions. The semiconductor device in the bulk semiconductor substrate may include an electrostatic discharge device (ESD). The bulk semiconductor substrate, which has a high thermal conductivity, serves as an effective medium for dissipating heat generated by the ESD.
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Citations
26 Claims
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1. An electronic structure, comprising:
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a bulk semiconductor substrate having a semiconductor device, wherein the semiconductor device includes M diffusions, wherein M is at least 2, wherein a first diffusion of the M diffusions is a P+ diffusion, and wherein a second diffusion of the M diffusions is a N+ diffusion;
a silicon-on-insulator (SOI) structure on the bulk semiconductor substrate, wherein the SOI structure includes an insulator layer on the bulk semiconductor substrate and a semiconductor layer on the insulator layer; and
M conductive plugs self-aligned with the M diffusions and extending through a portion of the SOI layer such that an end of each conductive plug is in conductive contact with a corresponding diffusion of the M diffusions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for forming an electronic structure, comprising the steps of:
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providing a bulk semiconductor substrate;
forming a silicon-on-insulator (SOI) structure on the bulk semiconductor substrate, wherein the SOI structure includes an insulator layer on the bulk semiconductor substrate and a semiconductor layer on the insulator layer;
forming a trench structure through the SOI layer, wherein an end of the trench structure is interfaced with the bulk semiconductor substrate;
forming a semiconductor device in the bulk semiconductor substrate by use of the trench structure, wherein the semiconductor device includes M diffusions, wherein M is at least 2, wherein a first diffusion of the M diffusions is a P+ diffusion, and wherein a second diffusion of the M diffusions is a N+ diffusion; and
forming M conductive plugs self-aligned with the M diffusions and extending through a portion of the SOI layer such that an end of each conductive plug is in conductive contact with a corresponding diffusion of the M diffusions. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification