Filtering device and method

• US 6,498,550 B1
• Filed: 04/28/2000
• Issued: 12/24/2002
• Est. Priority Date: 04/28/2000
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Miller, Melvy F., Dykstra, Jeffrey A.
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Jones, Stephen E.
• Application Number:
  US09/561,559
• Time in Patent Office: 970 Days
• Field of Search: 333/202, 333/219.1, 333/208, 505/210
• US Class Current: 333/208
• CPC Class Codes: H01P 1/2088 Integrated in a substrate
• CPC Class Codes: H01P 5/107 Hollow-waveguide/strip-line transitions

Abstract

A cavity filter (15) includes a dielectric block (25) disposed adjacent to a conductive layer (23) for producing a resonant frequency of the cavity filter. An electromagnetic signal (V_A) propagates within the dielectric block for a predetermined distance to a surface (58) of the conductive layer, where the predetermined distance is one-fourth of a wavelength of the electromagnetic signal at the resonant frequency.

Claims

1. A filter, comprising:

a first conductive layer positioned in a substrate of semiconductor material to form a cavity and having a first surface for reflecting an electromagnetic wave;

a dielectric block of a dielectric material having a relative permittivity substantially greater than one and disposed adjacent to the first conductive layer and completely filling the cavity, for propagating the electromagnetic wave a first distance to the first surface of the first conductive layer to determine a resonant frequency of the filter, the first distance being determined by size of the dielectric block and established to be equal to one-fourth of a wavelength of the resonant frequency of the filter;

a second conductive layer overlying the substrate and the dielectric block and formed with a first opening and a second opening overlying the dielectric block to thereby have first, second and third portions of the second conductive layer, the first opening being defined by the first and second portions and coupling the electromagnetic wave as an input, the second opening being defined by the second and third portions and coupling the electromagnetic wave as an output;

a first dielectric overlying the first portion of the second conductive layer and filling the first opening;

a second dielectric overlying the third portion of the second conductive layer and filling the second opening;

a first conductor overlying the first dielectric, wherein the first portion of the second conductive layer, the first dielectric and the first conductor jointly form a first transmission line for collectively inputting the electromagnetic wave;

a first conductive via connected between the first conductor and the second portion of the second conductive layer to terminate the first transmission line in a first short circuit adjacent the first opening;

a second conductor overlying the second dielectric, wherein the third portion of the second conductive layer, the second dielectric and the second conductor jointly form a second transmission line for collectively outputting the electromagnetic wave; and

a second conductive via connected between the second conductor and the second portion of the second conductive layer to terminate the second transmission line in a second short circuit adjacent the second opening to improve coupling from the dielectric block through the second opening to the second transmission line.

2. The filter of claim 1, wherein the resonant frequency is additionally determined by the relative permittivity of the dielectric block.

3. The filter of claim 1, where the dielectric block comprises a material having a relative permittivity of substantially sixty or more.

4. The filter of claim 1, where the resonant frequency of the filter is approximately 5.8 gigahertz.

5. An integrated circuit, comprising:

a substrate having a surface defining a cavity; and

a filter, comprising;

a first conductive layer formed on a surface of the cavity for reflecting an electromagnetic wave;

a first dielectric material disposed in the cavity to fill the cavity, for propagating the electromagnetic wave a first distance to a first surface of the first conductive layer to set a resonant frequency of the filter, the first distance being equal to one-fourth of a wavelength of the resonant frequency of the filter;

an input transmission line having a second dielectric material adjoined by a first conductive layer and a second conductive layer overlying the dielectric material, the first conductive layer defining an input aperture for inputting the electromagnetic wave to the first dielectric material and an output aperture for outputting the electromagnetic wave in filtered form;

a first via for electrically connecting the first and second conductive layers to terminate the input transmission line in a short circuit adjacent the input aperture;

an output transmission line adjoining the output aperture and having a third dielectric material adjoined by the first conductive layer and a third conductive layer; and

a second via for electrically connecting the third conductive layer to the first conductive layer to terminate the output transmission line in a short circuit adjacent to the output aperture to improve coupling from the first dielectric material through the second aperture to the output transmission line.

6. The integrated circuit of claim 5, wherein the first dielectric material has a relative permittivity of at least sixty.

7. The integrated circuit of claim 5 wherein the first via and the second via are connected to a continuous portion of the second conductive layer that is adjacent to both the first aperture and the second aperture.

8. The integrated circuit of claim 7 wherein the input transmission line and the output transmission line are formed as coplanar transmission lines on the substrate.

9. The integrated circuit of claim 7, wherein the second dielectric material has a thickness and the second conductive layer is formed with dimensions determined by a desired impedance of the input transmission line.

10. The integrated circuit of claim 5, wherein the resonant frequency is 5.8 gigahertz and the cavity is formed with dimensions less than five millimeters.

11. The integrated circuit of claim 5, further comprising an electrical component formed on the surface of the substrate.

12. The integrated circuit of claim 11, wherein the substrate comprises a semiconductor material and the electrical component includes a transistor.

13. A method of filtering a signal, comprising:

positioning a conductive layer in a substrate of semiconductor material to form a cavity and using a first surface of the conductive layer to reflect the signal;

providing a dielectric mass in the cavity having a relative permittivity greater than ten, and propagating the signal a distance through the dielectric mass substantially equal to one-fourth of a wavelength of a predetermined resonant frequency to produce a filtered signal at a frequency determined by the distance;

forming an input aperture to the dielectric mass;

coupling an input transmission line to the input aperture, the input transmission line comprising three distinct layers and being terminated in a first short circuit adjacent to the input aperture to improve electromagnetic coupling from the input transmission line into the dielectric mass;

forming an output aperture to the dielectric mass; and

coupling an output transmission line to the output aperture, the output transmission line also comprising three distinct layers and being terminated in a second short circuit adjacent to the output aperture for improving coupling from the dielectric mass to the output transmission line.

14. The method of claim 13, further comprising the step of providing the dielectric mass in the cavity with a relative permittivity of at least sixty.

15. The method of claim 13, wherein the step of providing the dielectric mass in the cavity further comprises using one of strontium titanate or barium strontium titanate as the dielectric mass.

16. The method of claim 15, further comprising the step of implementing the conductive surface with a material selected from the group consisting of aluminum, copper, gold, silver or a combination thereof.