Maskless, microlens EUV lithography system

• US 6,498,685 B1
• Filed: 01/04/2000
• Issued: 12/24/2002
• Est. Priority Date: 01/11/1999
• Status: Expired due to Fees

• Current Assignee: Kenneth C. Johnson
• Original Assignee: Kenneth C. Johnson
• Inventors: Johnson, Kenneth C.
• Primary Examiner(s): MACK, RICKY LEVERN
• Application Number:
  US09/478,233
• Time in Patent Office: 1,085 Days
• Field of Search: 250/492.2, 250/492.22, 250/492.1, 359/619, 359/626, 355/44, 355/45, 355/55, 347/239, 347/241, 347/244, 378/34, 378/35, 378/84, 378/85
• US Class Current: 359/626
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: F25J 2215/36 Xenon
• CPC Class Codes: G02B 21/0028 specially adapted for specific applications, e.g. for endoscopes, ophthalmoscopes, attachments to conventional microscopes
• CPC Class Codes: G02B 21/004 fixed arrays, e.g. switchable aperture arrays
• CPC Class Codes: G02B 21/0044 moving apertures, e.g. Nipkow disks, rotating lens arrays
• CPC Class Codes: G02B 21/0056 based on optical coherence, e.g. phase-contrast arrangements, interference arrangements
• CPC Class Codes: G02B 21/14 affording illumination for phase-contrast observation
• CPC Class Codes: G02B 3/0056 arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses G02B3/0043 takes precedence; miniaturised objectives for electronic devices employing wafer level optics G02B13/0085
• CPC Class Codes: G02B 3/0062 Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
• CPC Class Codes: G03F 7/70033 by plasma extreme ultraviolet [EUV] sources
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/704 Scanned exposure beam, e.g. raster-, rotary- and vector scanning mask projection exposure involving relative movement of patterned beam and workpiece during imaging G03F7/70358
• CPC Class Codes: G03F 9/70 for microlithography measuring printed patterns for monitoring overlay G03F7/70633 or focus G03F7/70641; projection system adjustment G03F7/70258; position control G03F7/70775
• CPC Class Codes: G21K 1/06 using diffraction, refraction or reflection, e.g. monochromators G21K1/10, G21K7/00 take precedence

Abstract

A maskless, extreme ultraviolet (EUV) lithography system uses microlens arrays to focus EUV radiation (at an operating wavelength of 11.3 nm) onto diffraction-limited (58-nm FWHM) focused spots on a wafer printing surface. The focus spots are intensity-modulated by means of microshutter modulators and are raster-scanned across a wafer surface to create a digitally synthesized exposure image. The system uses a two-stage microlens configuration to achieve both a high fill factor and acceptable transmission efficiency. EUV illumination is supplied by a 6 kHz xenon plasma source, and the illumination optics comprise an aspheric condenser mirror, a spherical collimating mirror, and two sets of flat, terraced fold mirrors that partition the illumination into separate illumination fields covering individual microlens arrays. (The system has no projection optics, because the image modulator elements are integrated with the microlens arrays.) The printing throughput is estimated to be 62 (300-mm) wafers per hour (assuming a resist exposure threshold of 20 mJ/cm²), and print resolution is estimated at 70 nanometers for mixed positive- and negative-tone patterns (at k₁=0.6).

Claims

1. A printing exposure apparatus comprising a radiation source, an illumination system, a modulator mechanism, a printhead, and a scanning mechanism, wherein

the printhead comprises a printhead aperture and an array of printer pixels distributed across the printhead aperture,

each pixel comprises a sequence of corresponding microlenses, which are symbolically designated as L₁, L₂, . . . , L_N, wherein N is an integer greater than 1,

the illumination system conveys radiation from the radiation source to the printhead, whereupon the first microlens L₁ in each sequence receives illuminating radiation,

each microlens L_m other than the last microlens L_N in the sequence focuses the illuminating radiation onto the next corresponding microlens L_m+1,

the last microlens L_N in each sequence focuses the illuminating radiation onto a corresponding focal point on a printing surface,

the modulator mechanism modulates the radiation, whereby the focal points'"'"' exposure intensity levels are controllably varied,

the modulator mechanism is a spatial light modulator comprising an array of modulator elements,

each pixel further comprises one such modulator element disposed between that pixel'"'"'s microlens L₁ and the printing surface,

the exposure intensity at each pixel'"'"'s corresponding focal point is modulated independently of other pixels, and

the scanning mechanism establishes relative motion between the printing surface and the printhead in synchronization with the modulator mechanism as the printing surface is exposed, whereby a synthesized, high-resolution exposure image is formed on the printing surface.

5. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein the radiation comprises EUV radiation in the 10 to 15 nanometer wavelength range.

6. The exposure apparatus of claim 5, wherein the radiation source is a xenon laser-produced plasma source.

7. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein the radiation source is a synchrotron and the radiation is EUV or x-ray radiation.

8. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein at least one of each pixel'"'"'s corresponding microlenses is a singlet, continuous-profile lens element.

9. The exposure apparatus of claim 5, wherein at least one of each pixel'"'"'s corresponding microlenses is a singlet, continuous-profile meniscus lens element composed of an optical material whose complex refractive index has a real part less than 1 over the operating EUV wavelength range.

10. The exposure apparatus of claim 9, wherein the singlet element is composed of one of the materials molybdenum, niobium, ruthenium, rhodium, or yttrium.

11. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein each pixel'"'"'s last microlens is a multiple-element lens.

12. The exposure apparatus of claim 5, wherein each pixel'"'"'s last microlens is a triplet lens comprising two continuous-profile, meniscus elements with a convex spacer element between them.

13. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein at least one of each pixel'"'"'s corresponding microlenses is a phase Fresnel lens.

14. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein at least one of each pixel'"'"'s corresponding microlenses is a Fresnel zone plate.

15. The exposure apparatus of claim 1, wherein each pixel further comprises a micromechanical actuation mechanism for fine-adjusting the lateral position of the pixel'"'"'s corresponding last microlens.

16. The apparatus of claim 1 or 2 or 3 or 4 wherein the number of microlenses per pixel is two.

17. The apparatus of claim 1 or 2 or 3 or 4, further comprising at least one additional printhead to define a plurality of printheads that define a wafer print module, wherein the printing surface is on a semiconductor wafer, and the printheads simultaneously expose a common printing surface on the wafer.

18. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein each modulator element comprises a micromechanically-actuated shutter.

19. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein each modulator element is a grating modulator comprising two proximate, lamellar transmission gratings, one of which is micromechanically actuated to modulate the gratings'"'"' combined transmittance in the zero order.

20. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein the printhead further comprises a position sensor system that detects the printhead'"'"'s position relative to the printing surface, and wherein the detected positional information is used to accurately control the relative alignment between the printing surface and the printhead while scanning.

22. The exposure apparatus of claim 17, wherein the collection optics comprises a condenser mirror and collimator mirror, and wherein the mirrors'"'"' surface shapes are configured to simultaneously satisfy the collimation and uniformity conditions, taking into account the radiation source'"'"'s angular emission distribution and the mirror'"'"'s reflectivity dependence on incidence angle.

26. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein the scanning mechanism translates the printhead relative to a stationary printing surface during exposure.

27. The exposure apparatus of claim 26, wherein the printing surface is exposed through multiple exposure scans and is stepped between scans so that the printhead raster-scans multiple exposure fields.

28. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein the scanning mechanism translates the printing surface during exposure, while the printhead remains substantially stationary except for small positional corrections to maintain accurate positional alignment between the printhead and printing surface.

29. The exposure apparatus of claim 1 or 2 or 3 or 4, wherein the scanning motion interleaves or overlaps exposure patterns from different pixels so that any typical exposure point on the printing surface receives exposure energy from multiple pixels, whereby the resulting exposure image is not significantly affected by isolated pixel defects or nonfunctional pixels.

31. The exposure apparatus of claim 12, wherein the meniscus elements are made of molybdenum.

32. The exposure apparatus of claim 12, wherein the spacer is made of beryllium.

33. The exposure apparatus of claim 12, wherein the spacer is a vacuum space.

2. A printing exposure apparatus comprising a radiation source, an illumination system, a modulator mechanism, a printhead, and a scanning mechanism, wherein

the printhead comprises a printhead aperture and an array of printer pixels distributed across the printhead aperture,

each pixel comprises a sequence of corresponding microlenses, which are symbolically designated as L₁, L₂, . . . , L_N, wherein N is an integer greater than 1,

the illumination system conveys radiation from the radiation source to the printhead, whereupon the first microlens L₁ in each sequence receives illuminating radiation,

each microlens L_m other than the last microlens L_N in the sequence focuses the illuminating radiation onto the next corresponding microlens L_m+1,

the last microlens L_N in each sequence focuses the illuminating radiation onto a corresponding focal point on a printing surface,

the modulator mechanism modulates the radiation before it is conveyed to the printhead and all the focal points'"'"' exposure intensity levels are subjected to the same modulation, and

the scanning mechanism establishes relative motion between the printing surface and the printhead in synchronization with the modulator mechanism as the printing surface is exposed, whereby a synthesized, high-resolution exposure image is formed on the printing surface.

3. A printing exposure apparatus comprising:

a radiation source;

a printhead comprising a printhead aperture and an array of printer pixels distributed across the printhead aperture, wherein each pixel comprises

a sequence of corresponding microlenses including at least first and last microlenses, and

a modulator element disposed between the first microlens and the printing surface;

an illumination system that conveys radiation from the radiation source to the printhead, whereupon for each pixel in the printhead

the first microlens in the sequence receives illuminating radiation,

each microlens other than the last microlens in the sequence focuses received illuminating radiation onto the next corresponding microlens, and

the last microlens in the sequence focuses received illuminating radiation onto a corresponding focal point on a printing surface;

a modulator control mechanism that controls the modulators in the printhead independently of each other so that the exposure intensity at each pixel'"'"'s corresponding focal point is modulated independently of other pixels; and

a scanning mechanism that establishes relative motion between the printing surface and the printhead in synchronization with the modulator control mechanism as the printing surface is exposed.

21. The exposure apparatus of claim 3, wherein the illumination system comprises collection optics that produce a collimated radiation beam of substantially uniform irradiance, and distribution optics that efficiently partition the collimated beam into individual illumination zones covering individual printhead apertures.

23. The exposure apparatus of claim 21, wherein the collection optics comprises a condenser mirror and collimator mirror, the mirrors comprise reflective coatings, the collimator is spherical, and the mirrors'"'"' surface shapes and reflective coatings are configured to simultaneously satisfy the collimation and uniformity conditions, taking into account the radiation source'"'"'s angular emission distribution and the mirror'"'"'s reflectivity dependence on incidence angle.

24. The exposure apparatus of claim 21, wherein the distribution optics comprise two sets of flat, terraced fold mirrors, including a first set of fold mirrors that partition the collimated beam from the collection optics into a set of first reduced-aperture collimated beams, and a second set of fold mirrors that partition each first reduced-aperture beam into a set of second reduced-aperture collimated beams, wherein each second reduced-aperture collimated beam illuminates a particular corresponding printhead aperture.

25. The exposure apparatus of claim 24, wherein the radiation comprises EUV radiation in the 10 to 15 nanometer wavelength range, the radiation source is a xenon laser-produced plasma source, and the fold mirrors comprise reflective coatings whose reflectivities counterbalance and compensate for exposure illumination variations between printheads due to EUV absorption by ambient xenon gas.

30. The apparatus of claim 3, further comprising at least one additional wafer print module to define a plurality of wafer print modules, wherein the modules simultaneously expose different print surfaces on separate wafers.

4. A printing exposure apparatus comprising:

a radiation source;

a printhead comprising a printhead aperture and an array of printer pixels distributed across the printhead aperture, wherein each pixel comprises

a sequence of corresponding microlenses including at least first and last microlenses, and

an illumination system that conveys radiation from the radiation source to the printhead, whereupon for each pixel in the printhead

the first microlens in the sequence receives illuminating radiation,

each microlens other than the last microlens in the sequence focuses received illuminating radiation onto the next corresponding microlens, and

the last microlens in the sequence focuses received illuminating radiation onto a corresponding focal point on a printing surface;

a modulator mechanism that modulates the radiation before it is conveyed to the printhead so that the exposure intensity at each pixel'"'"'s corresponding focal point is subjected to the same modulation; and

a scanning mechanism that establishes relative motion between the printing surface and the printhead in synchronization with the modulator control mechanism as the printing surface is exposed.