Quasi-remote plasma processing method and apparatus

• US 6,499,425 B1
• Filed: 01/22/1999
• Issued: 12/31/2002
• Est. Priority Date: 01/22/1999
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Srinivasan, Anand, Sharan, Sujit
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): Zervigon, Rudy
• Application Number:
  US09/236,277
• Time in Patent Office: 1,439 Days
• Field of Search: 438/788, 438/308, 118/723.MP, 118/725, 118/728, 118/723, 118/719, 118/723.ER, 118/723.E, 118/723.ME, 118/715, 118/730, 156/643, 250/251, 204/298.08, 204/298.03, 204/298.11
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45514 Mixing in close vicinity to the substrate
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

In a plasma processing apparatus, a showerhead is provided that allows for selective ionization of one or more process gasses within the showerhead. The showerhead allows the gasses to react after they exit the showerhead. As a result, a greater volume of materials are. available for deposition on a wafer surface during a chemical vapor deposition process than would be available in a process that remotely generates plasma. In addition, less damage is done to the wafer that would be done in a process that generates plasma next to the wafer.

Claims

1. A plasma-process showerhead, comprising:

a body configured to receive energy from a power source;

a plate coupled to said body, said plate having a first group of apertures and a second group of apertures, and said plate and said body defining a plasma-creation zone within said body; and

a first-gas conduit located within said body and coupled to said body and to said plate, said first-gas conduit configured to intersect said plasma-creation zone and further configured to end at said first group of apertures.

2. The plasma-process showerhead in claim 1, herein said body and said first-gas conduit are cooperatively configured to define a second-gas passageway leading to said second group of apertures.

3. The plasma-process showerhead in claim 2, wherein said first-gas conduit is configured to branch into a plurality of sub-conduits;

and wherein said plurality of subconduits end at said first group of apertures.

4. The plasma-process showerhead in claim 3, wherein. each sub-conduit of said plurality of sub-conduits ends at at least one aperture of said first group of apertures.

5. The plasma-process showerhead in claim 4, wherein said body is positioned to receive a first ionization energy.

6. The plasma-process showerhead in claim 5, wherein said body is positioned to receive a second ionization energy.

7. A CVD system, comprising:

a housing;

a showerhead, further comprising;

a body defining an interior volume and having a face perforated by a first group of apertures and a second group of apertures, wherein said body is coupled to said housing;

a conduit extending through said volume and communicating with said first group of apertures;

a first pair of ionization electrodes around said showerhead.

8. The CVD system in claim 7, wherein a portion of said interior volume that is external to said conduit is in communication with said second group of apertures.

9. The CVD system in claim 8, further comprising a second pair of ionization electrodes around said showerhead.

10. A showerhead for a plasma-process system defining a reaction chamber, comprising:

a conduit system; and

a shell coupled to said conduit system and generally encompassing said conduit system, wherein said shell is configured to couple to said plasma-process system within said reaction chamber; and

a plasma enabling device configured to enable ionization, wherein said plasma enabling device is positioned in relation to said shell such that said ionization is limited to within said shell.

11. The showerhead in claim 10, wherein said shell is configured to couple to a first gas supply pipe of said plasma-process system.

12. The showerhead in claim 11, wherein said shell is configured to couple to a second gas supply pipe of said plasma-process system, and said shell is further configured to accommodate a gas from said second gas supply pipe between an exterior of said conduit system and an interior of said shell.

13. The showerhead in claim 12, wherein said shell intersects a plane defined by said plasma-enabling device.

14. The showerhead in claim 12, wherein said shell is within a perimeter defined by said plasma-enabling device.

15. The showerhead in claim 12, further comprising an additional conduit system coupled to said shell and encompassed by said shell.

16. The showerhead in claim 15, wherein said shell is configured to couple to a third gas supply pipe of said plasma-process system, and said shell is further configured to accommodate a gas from said third gas supply pipe between said conduit system, said additional conduit system, and said shell.

17. A plasma reactor, comprising:

a reactor housing;

a workpiece supporter coupled to said reactor housing and located to avoid an ionization field; and

a gas disperser coupled to said reactor housing, said gas disperser comprising;

a gas housing located to intercept [an] said ionization field,

at least one partition located within said gas housing, said gas housing being configured to receive at least one gas on one side of said partition and at least a second gas on a second side of said partition, and

a perforated dispersal plate located at a side of said gas housing and in communication with an interior of said gas housing on both sides of said partition.

18. A plasma reactor, comprising:

a reactor housing; and

a gas disperser coupled to said reactor housing, said gas disperser comprising;

a gas housing located to intercept an ionization field,

at least one partition located within said gas housing, said gas housing being configured to receive at least one gas on one side of said partition and at least a second gas on a second side of said partition, and

a perforated dispersal plate located at a side of said gas housing and in communication with an interior of said gas housing on both sides of said partition, wherein said dispersal plate is positioned along a boundary defined by said ionization field.

19. A plasma reactor, comprising:

a reactor housing; and

a gas disperser coupled to said reactor housing, said gas disperser comprising;

a gas housing located to intercept an ionization field,

at least one partition located within said gas housing, said gas housing being configured to receive at least one gas on one side of said partition and at least a second gas on a second side of said partition, and

a perforated dispersal plate located at a side of said gas housing and in communication with an interior of said gas housing on both sides of said partition, wherein said dispersal plate is positioned outside a boundary defined by said ionization field.

20. A plasma reactor, comprising:

a reactor housing;

a gas disperser coupled to said reactor housing, said gas disperser comprising;

a gas housing located to intercept an ionization field,

at least one partition located within said gas housing, said gas, housing being configured to receive at least one gas on one side of said partition and at least a second gas on a second side of said partition, and

a perforated dispersal plate located at a side of said gas housing and in communication with an interior of said gas housing on both sides of said partition; and

a susceptor coupled to said reactor housing and cooperatively positioned in relation to said gas disperser; and

wherein said gas housing is configured to intercept said ionization field to the exclusion of an area between said dispersal plate and said susceptor.

21. A CVD reactor showerhead, comprising:

a body having an interior volume and having a porous wall;

a conduit extending through said interior volume to said porous wall, wherein an interior of said conduit is isolated from said interior volume exterior to said conduit, and wherein said interior volume exterior to said conduit defines a passageway; and

a heater coupled to said conduit and located within the interior volume of the body, said heater having thermal communication with said passageway.

22. The showerhead in claim 21, wherein said conduit further comprises:

a main trunk coupled to said body; and

a plurality of branches, wherein each branch of said plurality of branches is coupled to said main trunk at one end and to said porous wall at another end.

23. The showerhead in claim 22, wherein said heater is coupled to said main trunk.

24. The showerhead in claim 22, further comprising a plurality of heaters, wherein each heater of said plurality of heaters is respectively coupled to one branch of said plurality of branches.

25. A plasma reactor, comprising:

a housing;

a showerhead coupled to said housing, further comprising;

a body defining a shell including a porous region;

a plurality of gas conduits extending through said shell to said porous region; and

at least one ionization electrode pair external to and level with said showerhead and configured to inductively communicate with at least one gas conduit of said plurality of gas conduits.

26. The plasma reactor in claim 25, further comprising a plurality of ionization electrode pairs level With said showerhead and configured to correspondingly inductively communicate with said plurality of gas conduits.

27. The plasma reactor in claim 26, wherein interior portion of said body and exterior portions of said plurality of gas conduits are configured to define a passageway through said shell to said porous region.

28. The plasma reactor in claim 27, further comprising an additional ionization electrode pair level with said showerhead and configured to inductively communicate with said passageway.

29. A plasma processor, comprising:

a housing;

a showerhead coupled to said housing;

a conduit system within said showerhead; and

a first pair of ionizing electrodes flanking said showerhead and configured to couple to a first power source of a first type.

30. The plasma processor in claim 29, wherein a combination of said housing and said showerhead define a chamber.

31. A plasma processor, comprising:

a housing;

a showerhead coupled to said housing, wherein a combination of said housing and said showerhead define a chamber;

.

a first pair of ionizing electrodes flanking said showerhead and configured to couple to a first power source of a first type; and

a casing coupled to a selection of said showerhead and said housing, wherein said casing supports said first pair of ionizing electrodes.

32. The plasma processor in claim 31, wherein said casing further comprises a contact portion coupled to said showerhead;

and wherein said contact portion is made of an insulating material.

33. The plasma processor in claim 32, wherein said casing further comprises a first support portion made of an insulating material and coupled to said first pair of ionizing electrodes.

34. The plasma processor in claim 33, further comprising a second pair of ionizing electrodes flanking said showerhead and configured to couple to a second power source of said first type.

35. The plasma processor in claim 34, wherein said first pair of ionizing electrodes are configured to couple to a first RF power source and further configured to generate a first RF field having a first frequency;

and wherein said second pair of ionizing electrodes are configured to couple to a second RF power source and further configured to generate a second RF field having a second frequency.

36. The plasma processor in claim 35, wherein said casing further comprises a divider made of an insulating material and interposed between said first pair of ionizing electrodes and said second pair of ionizing electrodes.

37. The plasma processor in claim 35, wherein said divider supports said second pair of ionizing electrodes.

38. A plasma deposition device, comprising:

a housing having a housing perimeter;

a showerhead coupled to said housing and having a showerhead perimeter and a partitioned showerhead interior;

a first electrode next to said showerhead perimeter and configured to couple to a first power source of a first type; and

a second electrode next to said showerhead perimeter and across said showerhead from said first electrode and configured to couple to said first power source.

39.The plasma deposition device in claim 38, further comprising;

a third electrode next to said showerhead perimeter and configured to couple to a second power source of a second type; and

a fourth electrode next to said showerhead perimeter and across said showerhead from said third electrode and configured to couple to said second power source.

39. The plasma deposition device in claim 39, wherein said first electrode and said second electrode are configured to couple to an RF power source;

and said third electrode and said fourth electrode are configured to couple to a microwave power source.

40. The plasma deposition device in claim 40, wherein said showerhead perimeter is generally similar in size to said housing perimeter.

41. A CVD reactor, comprising:

a housing defining a CVD chamber and comprising;

a bottom, and

a sidewall, further comprising;

a lower portion coupled to said bottom, and

a top;

a showerhead shell coupled to said housing and including a porous faceplate defining a plane above said top and generally parallel to said bottom; and

a plurality of ionizing electrodes outside of and next to said showerhead shell and over said top of said sidewall.

42. The CVD reactor in claim 42, wherein said plurality of ionizing electrodes each have a bottom portion above said plane.

44. The CVD reactor in claims 42, wherein said plurality of ionizing electrodes are internal to said showerhead shell.

43. A CVD reactor, comprising:

housing having;

a bottom, and

a sidewall, further comprising;

a lower portion coupled to said bottom, and

a top;

a showerhead shell coupled to said housing and including a porous faceplate defining a plane above said top and generally parallel to said bottom; and

a plurality of ionizing electrodes next to said showerhead shell and over said top of said sidewall, and wherein said plurality of ionizing electrodes each have a bottom portion coplanar with said plane.

45. A plasma processing apparatus, comprising:

a showerhead defining a first portion of a chamber and defining a plurality of process material inputs and configured to allow a gas-ionizing field within said first portion;

a housing defining a second portion of said chamber; and

a plurality of electrodes configured to establish said gas-ionizing field.

46. The plasma processing apparatus of claim 46, wherein said showerhead defines an upper portion of said chamber;

and said housing defines a lower portion of said chamber.

47. A plasma processing apparatus, comprising:

a showerhead defining an inner portion of a chamber;

a housing defining an outer portion of said chamber; and

a plurality of electrodes configured in cooperation with said showerhead to establish a gas-ionizing field within said inner portion.