Epitaxial material grown laterally within a trench and method for producing same

• US 6,500,257 B1
• Filed: 04/17/1998
• Issued: 12/31/2002
• Est. Priority Date: 04/17/1998
• Status: Expired due to Fees

• Current Assignee: Agilent Technologies, Inc.
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Chen, Yong, Wang, Shih-Yuan, Corzine, Scott W., Kern, R. Scott, Chen, Changhua, Schneider, Richard P. Jr.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US09/062,028
• Time in Patent Office: 1,719 Days
• Field of Search: 117/95, 438/479
• US Class Current: 117/95
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02647 Lateral overgrowth

Abstract

An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

Claims

1. A method for growing a low dislocation density material, comprising the steps of:

forming a trench in a substrate; and

growing, in said trench, an epitaxial lateral growth layer, that originates from a wall of said trench, said epitaxial lateral growth layer including a plurality of growth regions, each growth region extending about 90 degrees with respect to each prior growth region, said plurality of growth regions being grown in one continuous growth step.

2. The method as defined in claim 1, wherein said substrate includes a first epitaxial layer.

3. The method as defined in claim 1, wherein said epitaxial lateral growth layer partially fills said trench.

4. The method as defined in claim 1, wherein said epitaxial lateral growth layer completely fills said trench.

5. The method as defined in claim 1, wherein said epitaxial lateral growth layer completely fills and overflows said trench.

6. The method as defined in claim 1, further comprising the step of applying an insulating layer over a base of said trench.

7. The method as defined in claim 1, further comprising the step of applying an insulating layer over said substrate.

8. The method as defined in claim 1, further comprising the step of applying a conducting layer over a base of said trench.

9. The method as defined in claim 1, further comprising the step of applying a conducting layer over said substrate.

10. The method as defined in claim 1, wherein said epitaxial lateral growth layer is grown from a single side of said trench.

11. The method as defined in claim 1, wherein said epitaxial lateral growth layer includes an active region.

12. The method as defined in claim 1, wherein said epitaxial lateral growth layer is a gallium nitride material.

13. The method as defined in claim 1, further including the steps of:

forming an additional trench in said epitaxial lateral growth layer; and

growing an additional epitaxial lateral growth layer in said additional trench.

14. The method as defined in claim 1, wherein said trench is etched into said substrate.

15. The method as defined in claim 13, wherein said additional trench is formed at an angle to said trench.