Cleaving process to fabricate multilayered substrates using low implantation doses

• US 6,500,732 B1
• Filed: 07/27/2000
• Issued: 12/31/2002
• Est. Priority Date: 08/10/1999
• Status: Active Grant

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Brayan, Michael A., En, William G., Henley, Francois J.
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Simkovic, Viktor
• Application Number:
  US09/626,532
• Time in Patent Office: 887 Days
• Field of Search: 438/455, 438/458, 438/459, 156/344, 156/384, 294/264, 294/265, 297/62
• US Class Current: 438/459
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10T 156/1158 Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]

Abstract

A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also includes forming a device layer on the cleave layer. The method also includes selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region. Selected energy is provided to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.

Claims

1. A method of forming substrates, the method comprising:

providing a donor substrate;

forming a cleave layer comprising a cleave plane on the donor substrate, the cleave plane extending from a periphery of the donor substrate through a center region of the substrate;

forming a device layer on the cleave layer, the device layer comprising an epitaxial material;

selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region;

providing selected energy to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.

2. The method of claim 1 further comprising bonding the device layer of the donor substrate to a handle wafer after introducing the particles.

3. The method of claim 1 wherein the cleave layer comprises silicon germanium, the silicon germanium in the cleave layer comprising at least 10% germanium content in the silicon germanium alloy.

4. The method of claim 1 wherein the substrate comprises a stop layer underlying the cleave layer.

5. The method of claim 1 wherein a cleaved surface of the device layer comprises a surface roughness of less than about 20 Angstroms RMS.

6. The method of claim 1 wherein the particles are selected from hydrogen ions, deuterium ions, helium ions, or other light atomic mass species.

7. The method of claim 4 wherein the stop layer comprises a first stop layer overlying the substrate, a first silicon germanium layer overlying the first stop layer, and a second stop layer overlying the first silicon germanium layer.

8. The method of claim 1 wherein the cleave layer comprising a particle collection region and a cleave region.

9. The method of claim 1 wherein the cleave layer comprises a graded concentration of the silicon germanium.

10. The method of claim 9 wherein the graded concentration is greater near the device layer and decreases toward the donor substrate.

11. The method of claim 1 wherein the donar substrate is a silicone substrate having <

100>

crystal orientation.

12. The method of claim 1 wherein the particles are hydrogen ions.