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Semiconductor device

  • US 6,501,098 B2
  • Filed: 11/23/1999
  • Issued: 12/31/2002
  • Est. Priority Date: 11/25/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device including at least one TFT formed over a substrate, said TFT including a semiconductor layer, a gate insulating film formed in contact with the semiconductor layer and a gate electrode formed in contact with the gate insulating film,wherein said gate electrode includes a first conductive layer which is formed in contact with said gate insulating film, a second conductive layer which is formed on and inside a periphery of an upper surface of said first conductive layer, and a third conductive layer which is formed in contact with said first conductive layer and with top and side surfaces of said second conductive layer, wherein said second conductive layer comprises a different material from that of said first and third conductive layers;

  • wherein said semiconductor layer includes a channel forming region, a first impurity region of one conductivity type, and a second impurity region of said one conductivity type which is formed between said channel forming region and said first impurity region; and

    wherein a part of said second impurity region of said one conductivity type lies under said first conductive layer of said gate electrode.

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