Semiconductor device and method of manufacturing thereof

• US 6,501,146 B1
• Filed: 12/10/1997
• Issued: 12/31/2002
• Est. Priority Date: 06/18/1997
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Harada, Masana
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Nadav, Ori
• Application Number:
  US08/988,212
• Time in Patent Office: 1,847 Days
• Field of Search: 257/471-486, 257/260, 257/622, 257/656, 257/155, 257/156, 257/267-269, 257/280-284, 257/449-457, 438/570, 438/571, 438/576, 438/577, 438/581, 438/92
• US Class Current: 257/475
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/66136 PN junction diodes
• CPC Class Codes: H01L 29/66356 Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A plurality of p anode regions are formed at one surface of an n⁻ substrate. A trench is formed in each p anode region. An ohmic junction region is formed between an anode metallic electrode and the p anode region. The p anode region has a minimum impurity concentration at a portion near the ohmic junction region which enables ohmic contact. A cathode metallic electrode is formed at the other surface of the n⁻ substrate with an n⁺ cathode region interposed. Accordingly, a semiconductor device which has an improved withstand voltage and in which the reverse recovery current is reduced can be obtained.

Claims

1. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type;

a plurality of trench portions selectively formed on a main surface of said semiconductor substrate, each trench portion having bottom and side surfaces;

a plurality of impurity regions of a second conductivity type formed in the semiconductor substrate, each impurity region provided corresponding to said plurality of trench portions, respectively, and extending from said main surface deeper than the bottom surface of said corresponding trench portion and being in contact with at least said bottom surface of said corresponding trench portion; and

a first electrode layer formed on said main surface of said semiconductor substrate, said first electrode layer being in electrical contact with said main surface and at least a portion of each impurity region at said main surface, wherein

each of said impurity regions has an impurity concentration lower than a minimum impurity concentration for enabling an ohmic contact with said first electrode layer except for portions having a minimum impurity concentration for enabling an ohmic contact with said first electrode at said main surface near said side surfaces,

said first electrode and each impurity region form an ohmic contact at a contact region between said first electrode and at least a portion of each impurity region at said main surface near said side surfaces of its corresponding trench portion, and

said first electrode and said semiconductor substrate form a Schottky junction region at the main surface of said semiconductor substrate except for said contact region between said first electrode and said impurity regions.

2. The semiconductor device according to claim 1, wherein an insulator entirely fills each said trench portion.

3. The semiconductor device according to claim 2, wherein

said first electrode layer is formed of aluminum, and

said minimum impurity concentration which enables ohmic contact with said first electrode layer is 1× 10−

1×

10¹⁷/cm³.

4. The semiconductor device according to claim 1, wherein a metal silicide layer is provided between said first electrode layer and said main surface except for said bottom and side surfaces of said plurality of trench portions.

5. The semiconductor device according to claim 1, wherein

the first electrode layer is formed of aluminum, and

the minimum impurity concentration which enables ohmic contact with the first electrode layer is 1×

10¹⁶−

1×

10¹⁷/cm³.