Level shift circuit
First Claim
1. A level shift circuit comprising:
- at least one controllable semiconductor device including an electrode acting as a potential reference and connected to a common potential, the potential reference electrode and a main electrode being electrically connected together while a conduction signal is being input between the potential reference electrode and a control electrode;
a DC power supply having one electrode connected to an external circuit at its predetermined site varying between the common potential and a predetermined high potential, the DC power supply having a voltage lower than a voltage between said two potentials;
at least one load resistor having one end connected to the other electrode of the DC power supply and having the other end connected to the main electrode of said controllable semiconductor device; and
a logic circuit operating under said DC power supply, wherein a pulse-like conduction signal is input to the control electrode of said controllable semiconductor device so that conduction through the controllable semiconductor device causes a pulse-like voltage drop in the load resistor, the voltage drop being then communicated to said logic circuit as a signal, and wherein a current negative feedback resistor is inserted between the potential reference electrode of the controllable semiconductor device and the common potential so that the voltage between the control electrode and the common potential has a predetermined value smaller than the voltage value of said DC power supply while each controllable semiconductor device is conductive.
2 Assignments
0 Petitions
Accused Products
Abstract
A level shift circuit applies an on signal 25 and an off signal 26 each consisting of pulses, to high-voltage MOSFETs 1, 2, respectively, having their source connected to a common potential COM to induce a voltage drop in load resistors 3, 4 in order to set or reset a RS latch 15 to turn on or off an IGBT 17 on an upper arm of a PWM inverter bridge circuit having a varying emitter potential, a circuit free from a long time delay prevents an increase dV/dt in potential of an AC output terminal OUT that results in charging of a capacity between a source and a drain of each of the high-voltage MOSFETs 1, 2, whereby the charge current induces a voltage drop in the resistors 3, 4 to cause the RS latch to malfunction. NOT circuits 8, 11 and a NOR circuit 13 transmit a regular on signal, while NOT circuits 9, 12 and a NOR circuit 14 transmit a regular off signal. A threshold for the NOT circuits 8, 9 is lower than that for the NOT circuits 7, 10, so that when a voltage drop simultaneously occurs in the resistors 3, 4, output pulses from the NOT circuits 7, 10 mask output pulses from the NOT circuits 8, 9.
32 Citations
2 Claims
-
1. A level shift circuit comprising:
-
at least one controllable semiconductor device including an electrode acting as a potential reference and connected to a common potential, the potential reference electrode and a main electrode being electrically connected together while a conduction signal is being input between the potential reference electrode and a control electrode;
a DC power supply having one electrode connected to an external circuit at its predetermined site varying between the common potential and a predetermined high potential, the DC power supply having a voltage lower than a voltage between said two potentials;
at least one load resistor having one end connected to the other electrode of the DC power supply and having the other end connected to the main electrode of said controllable semiconductor device; and
a logic circuit operating under said DC power supply, wherein a pulse-like conduction signal is input to the control electrode of said controllable semiconductor device so that conduction through the controllable semiconductor device causes a pulse-like voltage drop in the load resistor, the voltage drop being then communicated to said logic circuit as a signal, and wherein a current negative feedback resistor is inserted between the potential reference electrode of the controllable semiconductor device and the common potential so that the voltage between the control electrode and the common potential has a predetermined value smaller than the voltage value of said DC power supply while each controllable semiconductor device is conductive. - View Dependent Claims (2)
-
Specification