Process for depositing at least one thin layer based on silicon nitride or oxynitride on a transparent substrate

• US 6,503,557 B1
• Filed: 05/04/2000
• Issued: 01/07/2003
• Est. Priority Date: 02/10/1997
• Status: Expired due to Term

• Current Assignee: Saint-Gobain Vitrage
• Original Assignee: Saint-Gobain Vitrage
• Inventors: Joret, Laurent
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US09/564,751
• Time in Patent Office: 978 Days
• Field of Search: 427/165, 427/166, 427/167, 427/255.29, 427/255.393, 427/255.394
• US Class Current: 427/167
• CPC Class Codes: C03C 17/225 Nitrides
• CPC Class Codes: C03C 17/3435 comprising a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/3441 comprising carbon, a carbide or oxycarbide
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/3626 one layer at least containing a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/3649 made of metals other than silver
• CPC Class Codes: C03C 17/366 Low-emissivity or solar control coatings
• CPC Class Codes: C03C 2217/281 Nitrides
• CPC Class Codes: C03C 2217/78 Coatings specially designed to be durable, e.g. scratch-resistant
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

The invention relates to a coated glass substrate, covered with at least one thin layer based on silicon nitride or silicon oxynitride. The thin layer contains the elements Si, O, N, C in the following atomic percentages:

Si: from 30 to 60%, N: from 10 to 56%, O: from 1 to 40%, C: from 1 to 40%.

The invention also relates to the process for obtaining the coated glass substrate using a gas-phase pyrolysis technique, and to its applications.

Claims

1. A process for depositing a layer on a transparent glass substrate, comprising:

in an essentially inert atmosphere or hydrogen-containing atmosphere that does not contain oxygen and which contains at least one silicon precursor and at least one nitrogen precursor that is an amine at a molar ratio of nitrogen precursor to silicon precursor ranging from 5 to 30, conducting gas-phase pyrolysis at a temperature ranging from 550-760°

C., thereby depositing a silicon/nitrogen containing coating onto a ribbon of float glass.

2. The process according to claim 1, wherein said silicon precursor is selected from the group consisting of silicon hydride, alkyl silane, silazane and a mixture thereof.

3. The process according to claim 1, wherein said amine is a primary, secondary or tertiary amine.

4. The process according to claim 3, wherein said amine is ethylamine C₂H₅NH₂, methylamine CH₃NH₂, dimethylamine (CH₃)₂NH, butylamine C₄H₉NH₂ or propylamine C₃H₇NH₂.

5. The process according to claim 1, in the gas-phase pyrolysis, adding a precursor selected from the group consisting of CF₄, organic phosphate, PO(OCH₃)₃, triethylphosphate, trimethylphosphate, trimethylborite, PCl₃, PF₃, PBr₃, PCl₅ and a mixture thereof to said at least two precursors which are pyrolyzed.