Semiconductor fabrication apparatus and fabrication method thereof

• US 6,503,562 B1
• Filed: 01/16/2001
• Issued: 01/07/2003
• Est. Priority Date: 05/17/1999
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Saito, Kazuyoshi, Takagi, Youji
• Primary Examiner(s): MEEKS, TIMOTHY HOWARD
• Application Number:
  US09/743,764
• Time in Patent Office: 721 Days
• Field of Search: 156/345, 118/715, 118/729, 118/730, 427/248.1, 427/127, 427/255.26, 427/255.4, 427/255.5
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 28/322 only coatings of metal elements only
• CPC Class Codes: C23C 28/345 with at least one oxide layer
• CPC Class Codes: C23C 8/02 Pretreatment of the material to be coated C23C8/04 takes precedence
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: H01L 21/68792 characterised by the construction of the shaft

Abstract

An epitaxial growth system is provided with a susceptor driving mechanism for rotationally driving a susceptor in a process chamber and this susceptor driving mechanism has a support shaft coupled to the susceptor, a driven portion, and an annular member with a plurality of permanent magnets arranged outside the driven portion. The driven portion is constructed in such structure that a coating for corrosion prevention consisting of a nickel coating, a chromium coating, and a metal oxide film formed by a passivation treatment with ozone is provided on a surface of a magnetic member.

Claims

1. A semiconductor fabrication apparatus comprising a process chamber into which a reactant gas is introduced and which has a pedestal for supporting an article to be processed, and a pedestal drive for rotating the pedestal,

wherein said pedestal drive comprises a shaft member which is coupled to said pedestal and which comprises a driven portion mainly comprised of a magnetic material, and an annular member which has a plurality of magnets arranged outside the driven portion and which can rotate the driven portion,

wherein said driven portion rotates following the rotation of said annular member and has a metal coating on a surface of said magnetic material and a metal oxide film on the metal coating.

2. The semiconductor fabrication apparatus according to claim 1, wherein said metal oxide film is formed by reaction between said metal coating and ozone.

3. The semiconductor fabrication apparatus according to claim 1, wherein said metal coating contains at least either one of nickel and chromium.

4. The semiconductor fabrication apparatus according to claim 1, wherein said magnetic material is mainly made of magnetic stainless steel.

5. The semiconductor fabrication apparatus according to claim 1, wherein said metal coating comprises of a nickel coating and a chromium coating formed on said nickel coating.

6. A method of fabricating a semiconductor fabrication apparatus comprising a process chamber into which a reactant gas is introduced and which has a pedestal for supporting an article to be processed, a shaft member which is coupled to the pedestal and which has a driven portion mainly comprised of a magnetic material, and an annular member which has a plurality of magnets arranged outside the driven portion and which can impose a rotational force on the driven portion,

wherein said driven portion rotates following the rotation of said annular member,

said method comprising forming a metal coating on a surface of said magnetic material and further forming a metal oxide film on the metal coating.

7. The fabrication method of the semiconductor fabrication apparatus according to claim 6, wherein said metal oxide film is formed by supplying ozone onto said metal coating to bring about reaction between the metal coating and the ozone.

8. The fabrication method of the semiconductor fabrication apparatus according to claim 6, wherein a film containing at least either one of nickel and chromium is formed as said metal coating on a surface of said magnetic material.

9. The fabrication method of the semiconductor fabrication apparatus according to claim 6, wherein said magnetic material is mainly made of magnetic stainless steel.

10. The fabrication method of the semiconductor fabrication apparatus according to claim 6, wherein a film comprising of a nickel coating and a chromium coating formed on said nickel coating is formed as said metal coating on a surface of said magnetic material.

11. A semiconductor fabrication apparatus comprising a process chamber into which a reactant gas is introduced and which has a pedestal for supporting an article to be processed, and a pedestal drive for rotating the pedestal,

wherein said pedestal drive comprises a shaft member which is coupled to said pedestal and which comprises a driven portion mainly comprised of a magnetic material, and an annular member which has a plurality of magnets arranged outside the driven portion and which can impose a rotational force on the driven portion,

wherein said driven portion rotates following the rotation of said annular member and comprises a metal coating containing at least either one of nickel and chromium and formed on a surface of said magnetic material, and a metal oxide film formed on the metal coating by reaction between the metal coating and ozone.