Method and apparatus for enhanced SOI passgate operations
First Claim
1. Apparatus for implementing enhanced silicon-on-insulator (SOI) passgate operations comprising:
- a silicon-on-insulator (SOI) passgate field effect transistor;
a select input coupled to said silicon-on-insulator (SOI) passgate field effect transistor; and
a discharging field effect transistor of an opposite channel type coupled to said silicon-on-insulator (SOI) passgate field effect transistor;
said discharging field effect transistor being activated only during an off cycle of said silicon-on-insulator (SOI) passgate field effect transistor.
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Abstract
A method and apparatus are provided for implementing enhanced silicon-on-insulator (SOI) passgate operations. The apparatus for implementing enhanced silicon-on-insulator (SOI) passgate operations includes a silicon-on-insulator (SOI) passgate field effect transistor. A select input is coupled to the silicon-on-insulator (SOI) passgate field effect transistor. A discharging field effect transistor of an opposite channel type is coupled to the silicon-on-insulator (SOI) passgate field effect transistor. The discharging field effect transistor is activated during an off cycle of the silicon-on-insulator (SOI) passgate field effect transistor. The discharging field effect transistor is coupled to the body of the SOI passgate field effect transistor. The discharging field effect transistor is deactivated during an on cycle of the SOI passgate field effect transistor, whereby the body of the SOI passgate field effect transistor floats during the on cycle. The method for implementing enhanced silicon-on-insulator (SOI) passgate operations can be used with N-channel or P-channel implementations as well as with a combination of N-channel and P-channel devices.
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Citations
16 Claims
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1. Apparatus for implementing enhanced silicon-on-insulator (SOI) passgate operations comprising:
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a silicon-on-insulator (SOI) passgate field effect transistor;
a select input coupled to said silicon-on-insulator (SOI) passgate field effect transistor; and
a discharging field effect transistor of an opposite channel type coupled to said silicon-on-insulator (SOI) passgate field effect transistor;
said discharging field effect transistor being activated only during an off cycle of said silicon-on-insulator (SOI) passgate field effect transistor.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. Apparatus for implementing enhanced silicon-on-insulator (SOI) passgate operations comprising:
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a silicon-on-insulator (SOI) passgate N-channel field effect transistor (NFET);
a select input coupled to a gate of said silicon-on-insulator (SOI) passgate NFET; and
a discharging P-channel field effect transistor (PFET) coupled to a body of said silicon-on-insulator (SOI) passgate NFET;
said select input coupled to a gate of said discharging PFET for activating said discharging PFET during an off cycle of said silicon-on-insulator (SOI) passgate NFET.
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Specification