High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage

• US 6,507,046 B2
• Filed: 05/11/2001
• Issued: 01/14/2003
• Est. Priority Date: 05/11/2001
• Status: Expired due to Term

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Mueller, Stephan
• Primary Examiner(s): Ho, Hoai
• Assistant Examiner(s): NGUYEN, THINH T
• Application Number:
  US09/853,375
• Publication Number:
  US 20020167010A1
• Time in Patent Office: 613 Days
• Field of Search: 257/77, 438/268, 252/62.3, 437/175, 437/69, 357/16
• US Class Current: 257/77
• CPC Class Codes: C30B 23/00 Single-crystal growth by condensing evaporated or sublimed materials
• CPC Class Codes: C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• CPC Class Codes: C30B 29/36 Carbides
• CPC Class Codes: H01L 21/0445 the devices having semiconductor bodies comprising crystalline silicon carbide multistep processes for the manufacture of said devices H01L29/66053
• CPC Class Codes: H01L 29/02 Semiconductor bodies ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 29/1608 Silicon carbide

Abstract

A high-resistivity silicon carbide single crystal is disclosed that includes at least one compensated dopant having an electronic energy level far enough from an edge of the silicon carbide bandgap to avoid conductive behavior, while far enough from mid-gap towards the band edge to create a greater band offset than do mid-level states when the substrate is in contact with a doped silicon carbide epitaxial layer and when the net amount of the dopant present in the crystal is sufficient to pin the Fermi level at the dopant'"'"'s electronic energy level. The silicon carbide crystal has a resistivity of at least 5000 ohms-centimeters at room temperature.

Claims

1. A semiconductor structure comprising:

a silicon carbide single crystal substrate; and

a doped epitaxial layer of silicon carbide on said substrate;

said substrate comprising at least one compensated dopant having an electronic energy level far enough from an edge of the silicon carbide bandgap to avoid conductive behavior, while far enough from mid-gap towards the band edge to create a greater band offset between said substrate and said epitaxial layer than do mid-level states when said substrate is in contact with said silicon carbide epitaxial layer and when the net amount of said dopant present in said substrate is sufficient to pin the Fermi level of said substrate at said dopant'"'"'s electronic energy level; and

said silicon carbide substrate having a resistivity of at least 5000 ohms-centimeters at room temperature (298K).

2. A semiconductor structure according to claim 1 wherein said substrate is compensated by a dopant and intrinsic point defects.

3. A semiconductor structure according to claim 2 wherein said dopant is nitrogen and said compensated dopant is scandium.

4. A semiconductor structure according to claim 3 and further comprising boron as a second compensated dopant;

the concentration of said boron being greater than the concentration of said scandium; and

the net concentration of said boron, said point defects and said scandium being sufficient to pin the Fermi level at the level of said scandium in the presence of said intrinsic nitrogen.

5. A silicon carbide structure according to claim 4 wherein electrons from said nitrogen fill the energy level of said boron and partially fill the energy level of said scandium.

6. A field-effect transistor that includes the semi-insulating silicon carbide substrate according to claim 5.

7. A semiconductor structure according to claim 1 wherein:

said doped epitaxial layer is p-type; and

said net dopant in said substrate is n-type.

8. A semiconductor structure according to claim 1 wherein:

said doped epitaxial layer is n-type; and

said net dopant in said substrate is p-type.

9. A silicon carbide structure according to claim 1 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes.

10. A silicon carbide structure according to claim 1 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

11. A silicon carbide structure according to claim 1 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

12. A silicon carbide single crystal comprising:

nitrogen; and

at least one acceptor element having an electronic energy level of between 0.3 and 1.4 eV relative to the valence band of mono-crystalline silicon carbide;

said at least one acceptor element being present in an amount that over compensates the nitrogen and pins the Fermi level of said silicon carbide substrate to the electronic energy level of said at least one acceptor element.

13. A silicon carbide single crystal according to claim 12 comprising other intrinsic point defects that act as donors and wherein said at least one acceptor element is present in an amount that over compensates the nitrogen and said other intrinsic point defects that act as donors and pins the Fermi level of said silicon carbide substrate to the electronic energy level of said at least one acceptor element.

14. A silicon carbide substrate according to claim 12 wherein said acceptor element comprises scandium.

15. A silicon carbide substrate according to claim 12 wherein said acceptor element comprises boron.

16. A silicon carbide substrate according to claim 12 comprising two or more acceptor elements.

17. A silicon carbide substrate according to claim 12 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes.

18. A silicon carbide substrate according to claim 12 having a resistivity of at least 5,000 ohms-centimeters at room temperature.

19. A silicon carbide substrate according to claim 12 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

20. A silicon carbide substrate according to claim 12 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

21. A semiconductor structure comprising an n-type doped silicon carbide epitaxial layer on a silicon carbide substrate according to claim 12.

22. A field effect transistor that includes a semiconductor structure according to claim 21.

23. A silicon carbide single crystal comprising;

an amount of electrically active nitrogen;

an amount of electrically active point defects that act as acceptors; and

an amount at least one acceptor element having an electronic energy level of between 0.3 and 1.4 eV relative to the valence band of mono-crystalline silicon carbide;

wherein the combined amount of said acceptor element and said point defects is greater than said amount of electrically active nitrogen and pins the Fermi level of said silicon carbide single crystal to the electronic energy level of said at least one acceptor element.

24. A silicon carbide single crystal according to claim 23 wherein said acceptor element comprises scandium.

25. A silicon carbide single crystal according to claim 23 wherein said acceptor element comprises boron.

26. A silicon carbide single crystal according to claim 23 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes.

27. A silicon carbide single crystal according to claim 23 having a resistivity of at least 5,000 ohms-centimeters at room temperature.

28. A silicon carbide single crystal according to claim 23 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

29. A silicon carbide single crystal according to claim 23 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

30. A semiconductor structure comprising an n-type epitaxial layer of silicon carbide on a silicon carbide single crystal substrate according to claim 23.

31. A field effect transistor that includes a semiconductor structure according to claim 30.

32. A bulk single crystal of silicon carbide comprising:

non-intentionally introduced nitrogen;

scandium; and

boron; and

wherein

the concentration of nitrogen is greater than the concentration of scandium; and

the concentration of boron is sufficient for the sum concentration of boron and scandium to overcompensate the nitrogen, and pin the Fermi level of said silicon carbide to the level of said scandium.

33. A semiconductor structure comprising an n-type epitaxial layer of silicon carbide on a silicon carbide substrate according to claim 32.

34. A field effect transistor that includes a semiconductor structure according to claim 33.

35. A silicon carbide single crystal according to claim 32 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes.

36. A silicon carbide single crystal according to claim 32 having a resistivity of at least 5,000 ohms-centimeters at room temperature.

37. A silicon carbide single crystal according to claim 32 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

38. A silicon carbide substrate according to claim 32 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

39. A bulk single crystal of silicon carbide comprising:

nitrogen in a concentration of between about 5E15 and 3E16 cm<sup>−

3</sup>;

boron in a concentration of 1E16 cm<sup>−

3</sup>;

scandium in a concentration of between about 1E15 and 2E16 cm<sup>−

3</sup>;

point defects in a concentration of between about 1E14 and 3E16 cm<sup>−

3</sup>; and

a resistivity of at least 5000 Ω

-cm at room temperature.

40. A semiconductor structure comprising an n-type epitaxial layer of silicon carbide on a silicon carbide substrate according to claim 39.

41. A metal-semiconductor field effect transistor comprising respective source gate and drain contacts on a semiconductor structure according to claim 40.

42. A silicon carbide single crystal according to claim 39 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H, and 15R polytypes.

43. A silicon carbide single crystal according to claim 39 having a resistivity of at least 5,000 ohms-centimeters at room temperature.

44. A silicon carbide single crystal according to claim 39 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

45. A silicon carbide single crystal according to claim 39 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

46. A silicon carbide single crystal comprising;

electrically active nitrogen;

electrically active point defects that act as acceptors;

a first acceptor element having an electronic energy level of between 0.3 and 1.4 eV relative to the valence band of mono-crystalline silicon carbide; and

a second acceptor element having an electronic energy level of between 0.3 and 1.4 eV relative to the valence band of mono-crystalline silicon carbide;

said energy level of said first acceptor element being deeper than the energy level of said second acceptor element;

the concentration of said second acceptor element being greater than the amount of said first acceptor element; and

the combined amount of said acceptor elements and said point defects being greater than said amount of electrically active nitrogen and pins the Fermi level of said silicon carbide substrate to the electronic energy level of said first acceptor element.

47. A semiconductor structure comprising an n-type epitaxial layer of silicon carbide on a silicon carbide substrate according to claim 46.

48. A field effect transistor that includes a semiconductor structure according to claim 47.

49. A silicon carbide single crystal according to claim 46 wherein said acceptor element comprises scandium.

50. A silicon carbide single crystal according to claim 46 wherein said second acceptor element comprises boron.

51. A silicon carbide single crystal according to claim 46 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes.

52. A silicon carbide single crystal according to claim 46 having a resistivity of at least 5,000 ohms-centimeters at room temperature.

53. A silicon carbide single crystal according to claim 46 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

54. A silicon carbide single crystal according to claim 46 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

55. A semiconductor structure comprising:

a silicon carbide single crystal substrate; and

a doped region of silicon carbide adjacent said substrate;

said substrate comprising at least one compensated dopant having an electronic energy level far enough from an edge of the silicon carbide bandgap to avoid conductive behavior, while far enough from mid-gap towards the band edge to create a greater band offset between said substrate and said doped region than do mid-level states when said substrate is in contact with said doped region and when the net amount of said dopant present in said substrate is sufficient to pin the Fermi level of said substrate at said dopant'"'"'s electronic energy level; and

said silicon carbide substrate having a resistivity of at least 5000 ohms-centimeters at room temperature (298K) .

56. A silicon carbide structure according to claim 55 wherein said substrate is compensated by a dopant and intrinsic point defects.

57. A silicon carbide structure according to claim 56 wherein said dopant is nitrogen and said compensated dopant is scandium.

58. A silicon carbide structure according to claim 57 and further comprising boron as a second compensated dopant;

the concentration of said boron being greater than the concentration of said scandium; and

the net concentration of said boron, said point defects and said scandium being sufficient to pin the Fermi level at the level of said scandium in the presence of said intrinsic nitrogen.

59. A silicon carbide structure according to claim 58 wherein electrons from said nitrogen fill the energy level of said boron and partially fill the energy level of said scandium.

60. A field-effect transistor that includes the semi-insulating silicon carbide substrate according to claim 59.

61. A semiconductor structure according to claim 55 wherein:

said adjacent doped region is p-type; and

said net dopant in said substrate is n-type.

62. A semiconductor structure according to claim 55 wherein:

said adjacent doped region is n-type; and

said net dopant in said substrate is p-type.

63. A silicon carbide structure according to claim 55 wherein the polytype of the silicon carbide is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes.

64. A silicon carbide structure according to claim 55 having a resistivity of at least 10,000 ohms-centimeters at room temperature.

65. A silicon carbide structure according to claim 55 having a resistivity of at least 50,000 ohms-centimeters at room temperature.

66. A silicon carbide structure according to claim 55 wherein said adjacent doped region is a dopant-implanted region.

67. A silicon carbide structure according to claim 55 wherein said adjacent doped region is a dopant-diffused region.