Capacitive device and method of manufacture

• US 6,507,475 B1
• Filed: 06/27/2000
• Issued: 01/14/2003
• Est. Priority Date: 06/27/2000
• Status: Expired due to Term

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Sun, Xi-Qing
• Primary Examiner(s): Dinkins, Anthony
• Assistant Examiner(s): THOMAS, ERIC W
• Application Number:
  US09/604,626
• Time in Patent Office: 931 Days
• Field of Search: 361/277-278, 361/280-281, 361/287, 361/290
• US Class Current: 361/281
• CPC Class Codes: H01G 5/18 due to change in inclination, e.g. by flexing, by spiral wrapping
• CPC Class Codes: H01L 27/0805 Capacitors only

Abstract

A capacitive device includes a substrate (110), a first electrode (130, 140, 1220) located over the substrate and a second electrode (170, 1070, 1071, 1250) located over the first electrode, movable relative to the first electrode, and capacitively coupled to the first electrode. The device further includes a first control electrode (120, 150, 1210) located over the substrate and a second control electrode (160, 180, 1060, 1061, 1080, 1081, 1240) located over the first control electrode, movable relative to the first control electrode, and capacitively coupled to the first control electrode. The first and second control electrodes actuate the second electrode toward the first electrode.

Claims

1. A capacitive device comprising:

a substrate;

a first electrode located over the substrate;

a second electrode located over the substrate;

a third electrode located over the first electrode, movable relative to the first electrode, and capacitively coupled to the first electrode;

a fourth electrode located over the second electrode, movable relative to the second electrode, and capacitively coupled to the second electrode,

wherein;

the first and third electrodes actuate the fourth electrode toward the second electrode; and

a fifth electrode located over the substrate,

wherein;

the fourth electrode is located over the fifth electrode, movable relative to the fifth electrode, and capacitively coupled to the fourth electrode; and

the second electrode is capacitively coupled to the fifth electrode via the fourth electrode.

2. The capacitive device of claim 1 further comprising:

a sixth electrode located over the substrate;

rip a seventh electrode located over the sixth electrode, movable relative to the sixth electrode, and capacitively coupled to the sixth electrode,

wherein;

the sixth and seventh electrodes actuate the fourth electrode toward the second and fifth electrodes.

3. The capacitive device of claim 2 wherein:

the first and sixth electrodes are electrically coupled together; and

the third and seventh electrodes are electrically coupled together.

4. The capacitive device of claim 1 further comprising:

an electrically insulative layer supporting the third electrode over the first electrode and supporting the fourth electrode over the second electrode.

5. The capacitive device of claim 1 wherein:

the first and third electrodes move in a first direction to actuate the fourth electrode in the first direction.

6. The capacitive device of claim 1 wherein:

the first and third electrodes move in a first direction to tune a capacitance between the second and fourth electrodes.

7. The capacitive device of claim 6 wherein:

the capacitance between the second and fourth electrodes has two discrete states.

8. The capacitive device of claim 7 wherein:

a gap is located between the first and third electrodes and between the second and fourth electrodes during a first one of the two discrete states; and

the capacitive device is devoid of the gap during a second one of the two discrete states.

9. The capacitive device of claim 1 wherein:

the first, second, third, and fourth electrodes form a switch.

10. A capacitive tuning device comprising:

a semiconductor substrate having a surface;

a first electrode located over the surface of the semiconductor substrate;

a second electrode located over the surface of the semiconductor substrate, located adjacent to the first electrode, and electrically isolated from the first electrode;

a third electrode located over the first electrode, movable relative to the first electrode, electrically isolated from the second electrode, and capacitively coupled to the first electrode;

a fourth electrode located over the second electrode, located adjacent to the third electrode, movable relative to the second electrode, electrically isolated from the first and third electrodes, and capacitively coupled to the second electrode;

an electrically insulative layer located between the first and third electrodes, supporting the third electrode over the first electrode, located between the second and fourth electrodes, and supporting the fourth electrode over the second electrode,

wherein;

the first and third electrodes actuate the fourth electrode toward the second electrode; and

a fifth electrode located over the surface of the semiconductor substrate, located adjacent to and between the first and second electrodes, and electrically isolated from the first electrode,

wherein;

the fourth electrode is located over the fifth electrode, movable relative to the fifth electrode, and capacitively coupled to the fourth electrode;

the electrically insulative layer is located between the fifth and fourth electrodes and supports the fourth electrode over the fifth electrode; and

the second electrode is capacitively coupled to the fifth electrode via the fourth electrode.

11. The capacitive tuning device of claim 10 further comprising:

a sixth electrode located over the surface of the semiconductor substrate, located adjacent to the second electrode, and electrically isolated from the second electrode;

a seventh electrode located over the sixth electrode, located adjacent to the fourth electrode, movable relative to the sixth electrode, electrically isolated from the fourth electrode, and capacitively coupled to the sixth electrode,

wherein;

the electrically insulative layer is located between the sixth and seventh electrodes and supports the seventh electrode over the sixth electrode; and

the sixth and seventh electrodes actuate the fourth electrode toward the second and fifth electrodes.

12. The capacitive tuning device of claim 11 wherein:

the first and sixth electrodes are electrically coupled together; and

the third and seventh electrodes are electrically coupled together.