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Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution

  • US 6,509,262 B1
  • Filed: 11/30/2000
  • Issued: 01/21/2003
  • Est. Priority Date: 11/30/2000
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a semiconductor device having a contaminant-reduced copper-calcium alloy on copper (Cu—

  • Ca/Cu) interconnect line structure formed in a via for reducing electromigration therein, comprising;

    a. providing a semiconductor substrate having the via;

    b. depositing a copper (Cu) interconnect line in the via;

    c. treating the Cu interconnect line in a chemical solution for facilitating selective doping of the Cu interconnect line with copper (Cu) and calcium (Ca), thereby selectively forming a Cu—

    Ca—

    X film on the Cu interconnect line, wherein X denotes at least one contaminant;

    d. processing the Cu—

    Ca—

    X film by sputtering under an argon (Ar) atmosphere, thereby removing the at least one contaminant, and thereby effecting a thin Cu—

    Ca film on the Cu interconnect line;

    e. annealing the thin Cu—

    Ca film, whereby the thin Cu—

    Ca film is alloyed, thereby forming a contaminant-reduced Cu—

    Ca alloy surface on the Cu interconnect line, and thereby forming the contaminant-reduced Cu—

    Ca/Cu interconnect line structure, comprising the contaminant-reduced Cu—

    Ca alloy surface on the semiconductor substrate; and

    f. completing formation of the semiconductor device.

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