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Semiconductor device with reduced source diffusion distance and method of making same

  • US 6,509,607 B1
  • Filed: 02/17/2000
  • Issued: 01/21/2003
  • Est. Priority Date: 02/18/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising a drain region, a body region overlying the drain region and defining an upper surface, source regions extending from adjacent the upper surface of the body region towards the drain region, and a series of indentations having side walls extending into and through the body region in a direction substantially perpendicular to the upper surface defined by the body region such that lower portions of the side walls of each indentation are defined by portions of the body and drain regions and upper portions of the side walls of each indentation are defined by the source regions, wherein a lower portion of each indentation is filled with a gate region isolated from the side walls by a first insulating layer and covered by a second insulating layer, a source conductor overlies the upper surface and is electrically connected to the source regions, and a gate conductor is electrically connected to each gate region, the source conductor extending into an upper portion of each indentation to contact portions of the upper portions of the side walls of the indentation which are defined by the source regions.

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