Wavelength monitoring apparatus for laser light for semiconductor exposure

• US 6,509,970 B1
• Filed: 06/21/2000
• Issued: 01/21/2003
• Est. Priority Date: 06/23/1999
• Status: Expired due to Fees

• Current Assignee: Ushio Denki Kabushiki Kaisha (Ushio Incorporated)
• Original Assignee: Ushio Denki Kabushiki Kaisha (Ushio Incorporated)
• Inventors: Seki, Kyohei, Hotta, Kazuaki, Kobayashi, Takao
• Primary Examiner(s): Turner, Samuel A.
• Assistant Examiner(s): CONNOLLY, PATRICK J
• Application Number:
  US09/599,289
• Time in Patent Office: 944 Days
• Field of Search: 556/454, 556/519, 372/32
• US Class Current: 356/454
• CPC Class Codes: G01J 9/0246 Measuring optical wavelength

Abstract

The present invention relates to a wavelength monitoring apparatus capable of measuring both standard light and laser light for semiconductor exposure simultaneously and highly accurately, without a time lag. Entrance-side optical systems 2₁ and 2₂ allow light from a laser 20 for semiconductor exposure and reference light from a He—Ne laser 10 to be incident on different areas of a single etalon 1 in the form of diverging light, converging light or diffused light in such a manner that the respective center axes thereof are displaced relative to each other. Two focusing optical systems 3₁ and 3₂ are provided in approximately coaxial relation to the respective center axes of the laser light and reference light passing through the etalon 1. A one-dimensional array optical sensor 4 is placed in a plane P coincident with the back focal planes of the focusing optical systems 3₁ and 3₂ to receive interference fringes produced by the laser light and the reference light. The positions of the interference fringes on the one-dimensional array optical sensor 4 are detected to calculate the wavelength of the laser light for semiconductor exposure.

Claims

1. A wavelength monitoring apparatus for laser light for semiconductor exposure, comprising:

an entrance-side optical system for making the laser light for semiconductor exposure and reference light incident on different areas of a single etalon in a form of diverging light, converging light or diffused light in such a manner that respective center axes of the laser light and the reference light are displaced relative to each other;

two focusing optical systems provided in approximately coaxial relation to the respective center axes of said laser light and reference light passing through said etalon; and

a one-dimensional array optical sensor placed in a plane coincident with back focal planes of said focusing optical systems to receive interference fringes produced by said laser light and reference light;

wherein positions of the interference fringes on said one-dimensional array optical sensor are detected to calculate a wavelength of said laser light for semiconductor exposure.

2. A wavelength monitoring apparatus according to claim 1, wherein said one-dimensional array optical sensor is a single one-dimensional array optical sensor, and the interference fringes produced by said laser light for semiconductor exposure and the interference fringes by said reference light are incident on respective split areas of said one-dimensional array optical sensor without being superimposed on one another.

3. A wavelength monitoring apparatus according to claim 1, wherein said etalon has different reflective coatings applied to an area thereof on which said laser light for semiconductor exposure is incident and an area thereof on which said reference light is incident, respectively.

4. A wavelength monitoring apparatus according to claim 2, wherein said etalon has different reflective coatings applied to an area thereof on which said laser light for semiconductor exposure is incident and an area thereof on which said reference light is incident, respectively.

5. A wavelength monitoring apparatus according to claim 1, wherein said laser light for semiconductor exposure is ArF excimer laser light or fluorine laser light, and said reference light is He—

Ne laser light.