Apparatus and method for growth of a thin film

• US 6,511,539 B1
• Filed: 09/08/1999
• Issued: 01/28/2003
• Est. Priority Date: 09/08/1999
• Status: Expired due to Term

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Raaijmakers, Ivo
• Primary Examiner(s): Utech, Benjamin L.
• Assistant Examiner(s): ANDERSON, MATTHEW A
• Application Number:
  US09/392,371
• Time in Patent Office: 1,238 Days
• Field of Search: 117/93, 117/102, 117/89, 427/255.23, 427/255.28, 427/939, 427/952, 427/571, 118/696
• US Class Current: 117/102
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 29/38 Nitrides
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: Y10T 117/10 Apparatus

Abstract

An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.

Claims

1. A method for depositing a layer on a substrate comprising the steps of:

(a) providing a reaction chamber for receiving said substrate;

(b) evacuating said reaction chamber through a vacuum pump;

(c) providing a continuous flow of carrier gas to said reaction chamber;

(d) providing alternating and sequential concentration pulses of at least two reactants to the carrier gas flow, at least one of the reactants containing excited species.

2. The method of claim 1 where the layer thickness per cycle is less than about 1 nm.

3. The method of claim 1 wherein the concentration of any one reactant in a carrier flow at a point in space and time is no greater than 10% of its maximum value when at that same point in space, time, or both another reactant is at its maximum concentration.

4. The method of claim 1 wherein the concentration of any one reactant in a carrier flow at a point in space and time is no greater than 1% of its maximum value when at that same point in space and time another reactant is at its maximum concentration.

5. The method of claim 1 wherein the concentration pulses of reactants are supplied to the carrier gas flow through the reaction chamber with an intermediate delay time sufficiently large to achieve a spatial separation between the pulses in the reaction chamber such that the characteristic diffusion length of the reactants or excited species in the carrier gas (L_D) is smaller than the distance between the trailing and leading edges of the pulses.

6. The method of claim 1 wherein the concentration pulses of reactants are supplied to the carrier gas flow through the reaction chamber with an intermediate delay time sufficiently large to achieve a spatial separation between the pulses in the reaction chamber such that the characteristic diffusion length of the reactants or excited species in the carrier gas (L_D) is 5 to 10 times smaller than the distance between the trailing and leading edges of the pulses.

7. The method of claim 1 wherein the excited species are excited neutrals or radicals formed in a plasma.

8. The method of claim 1 wherein pulses of a reactant gas without excited species alternate with pulses of a reactant comprising excited species.

9. The method of claim 1 wherein the gas inlet system comprises a first gas inlet for introducing carrier gas flow into the reaction chamber and a second gas inlet for introducing reactants comprising excited species into. said carrier gas flow.

10. The method of claim 1 wherein concentration pulses of the reactant containing excited species are generated by pulsing on an energy source coupled to a flow of precursor of the excited species.

11. The method of claim 10 where the energy source provides thermal energy.

12. The method of claim 10 wherein the energy source provides visable, UV or IR radiation.

13. The method of claim 1 wherein the layer deposited on the substrate consists of a metal nitride.

14. The method of claim 13 wherein the metal nitride is tantalum nitride.

15. The method of claim 13 wherein the metal nitride is titanium nitride.

16. The method of claim 1 wherein the layer deposited on the substrate consists of an elemental metal.

17. The method of claim 16 wherein the metal is tantalum.

18. The method of claim 16 wherein the metal is titanium.

19. A method for depositing a layer on a substrate comprising the steps of:

(a) providing a reaction chamber for receiving said substrate;

(b) evacuating said reaction chamber through a vacuum pump;

(c) providing a continuous flow of carrier gas to said reaction chamber to establish a gas flow parallel to said substrate surface while said reaction chamber is evacuated;

(d) supplying alternating and sequential concentration pulses of at least two reactants to the carrier gas flow, at least one of the reactants containing excited species;

(e) maintaining the pressure of said reaction chamber during the supply of the alternating and sequential pulses at a level between 1 and 20 torr.

20. The method according to claim 19 wherein at least one reactant is mixed with said continuous flow of carrier gas before entering said reaction chamber.

21. The method according to claim 19 wherein providing the continuous flow of carrier gas comprises providing a first continuous flow of carrier gas via a first gas inlet and providing a second continuous flow of carrier gas via a second gas inlet.

22. The method of claim 21 wherein supplying the alternating and sequential concentration pulses of at least two reactants comprises:

(a) supplying concentration pulses of a first reactant to the first continuous flow of carrier gas;

(b) supplying concentration pulses of a second reactant containing excited species to the second continuous flow of carrier gas.

23. The method according to claim 21 wherein at least one of said reactants is mixed with the respective flow of carrier gas prior to entering the reaction chamber.

24. The method of claim 19 wherein the excited species are excited neutrals or radicals formed in a plasma.

25. The method according to claim 24 wherein the reactant to be excited comprises nitrogen, hydrogen, ammonia or oxygen.

26. The method according to claim 19 wherein the concentration pulses of a reactant containing excited species are generated by pulsing on and off an energy source coupled to a continuous flow of a reactant to be excited.

27. The method according claim 26 wherein the energy source provides thermal energy.

28. The method according claim 26 wherein the energy source provides visible, UV or IR radiation.

29. The method according to claim 19 wherein the concentration pulses of the reactants are supplied to the carrier gas flow through the reaction chamber with an intermediate delay time sufficiently large to achieve a spatial separation between the pulses in the reaction chamber such that the distance between the leading and trailing edges of the pulses is larger than the characteristic diffusion length (L_D) of the reactants or excited species in the gas.

30. The method according to claim 19 wherein the concentration pulses of the reactants are supplied to the carrier gas flow through the reaction chamber with an intermediate delay time sufficiently large to achieve a spatial separation between the pulses in the reaction chamber such that the distance between the leading and trailing edges of the pulses is 5 to 10 times larger than the characteristic diffusion length (L_D) of the reactants or excited species in the gas.