Sputtering targets and method for the preparation thereof

• US 6,511,587 B2
• Filed: 12/05/2001
• Issued: 01/28/2003
• Est. Priority Date: 01/05/1996
• Status: Expired due to Fees

• Current Assignee: Soleras Advanced Coatings BVBA
• Original Assignee: Bekaert Vds
• Inventors: Vanderstraeten, Johan Emile Marie
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US10/001,964
• Publication Number:
  US 20020036135A1
• Time in Patent Office: 419 Days
• Field of Search: 204/298.13, 420/417, 423/598, 423/610
• US Class Current: 204/298.13
• CPC Class Codes: C03C 17/2456 Coating containing TiO2
• CPC Class Codes: C03C 2217/212 TiO2
• CPC Class Codes: C03C 2218/154 by sputtering
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 4/11 Oxides
• CPC Class Codes: C23C 4/134 Plasma spraying

Abstract

A process for the prearation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiO_x, where x is below 2 having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO₂, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiO_x, which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.

Claims

1. A sputtering target which comprises sub-stoichiometric titanium dioxide, TiO_x, where x is below 2 having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which target is obtained by a process comprising plasma spraying titanium dioxide, TiO₂, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiO_x which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.

2. A sputtering target as claimed in claim 1 wherein the target base is water cooled during the plasma spraying.

3. A sputtering target as claimed in claim 1 wherein the plasma spraying is carried out using argon as a plasma gas and hydrogen as a secondary plasma gas.

4. A sputtering target as claimed in claim 1 wherein the target base is titanium, stainless steel, aluminum or copper.

5. A sputtering target as claimed in claim 4 wherein the target base is a rotatable target or a flat magneton target.

6. A sputtering target as claimed in claim 5 which is a rotatable target having a cylindrical shape.

7. A sputtering target as claimed in claim 1 wherein the titanium dioxide which is plasma sprayed has particle size in the range of from 1 to 60 micrometers.

8. A sputtering target as claimed in claim 1 wherein the titanium dioxide is plasma sprayed together with Nb₂O₃.

9. A sputtering target as claimed in claim 1 wherein the sub-stoichiometric titanium dioxide, TiO_x, has a value of x in the range of from 1.55 to 1.95.

10. A sputtering target as claimed in claim 1 wherein the sputtering target has an electrical resistivity of about 0.02 ohm.cm.

11. A sputtering target for the preparation of sub-stoichiometric titanium dioxide, TiO_x, where x is below 2 having an electrical resistivity of less than 0.1 ohm.cm formed by subjecting titanium dioxide to a plasma treatment in an atmosphere which is oxygen deficient and which does not contain any oxygen-containing compounds.

12. A sputtering target as claimed in claim 11 wherein the titanium dioxide is sprayed through a plasma flame having a temperature of about 2000°

C.

13. A sputtering target as claimed in claim 12 wherein the plasma flame uses a mixture of hydrogen and argon as a plasma gas.