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Method of forming resist pattern, and exposure device

  • US 6,511,794 B1
  • Filed: 09/18/2000
  • Issued: 01/28/2003
  • Est. Priority Date: 03/27/2000
  • Status: Expired due to Fees
First Claim
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1. A method of forming a resist pattern, comprising the steps of:

  • (a) applying a resist to an object surface;

    (b) subjecting the resist to pattern exposure by irradiating the resist with light directed through a first reticle;

    (c) developing the resist, wherein the developed resist pattern has first regions not to be shrunk in which a plurality of patterns having intervals that are smaller than a predetermined distance are provided, and second regions to be shrunk at a predetermined shrinkage rate in which a plurality of patterns having intervals that are larger than a predetermined distance are provided;

    (d) providing the first regions not to be shrunk with resistance to shrinkage during a bake process by irradiating the resist with light directed through a second reticle, the light only reaching said first regions;

    (e) adjusting a shrinkage rate of the resist pattern by irradiating the entire resist with light; and

    (f) baking the resist.

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