Method of forming ferromagnetic tunnel junctions with enhanced magneto-resistance
First Claim
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1. A method for forming a tunnel junction, comprising the steps of:
- forming a first ferromagnetic layer with an upper surface having a topography which includes a set of domed areas and a set of intervening low areas;
forming an insulating layer over the first ferromagnetic layer such that an upper surface of the insulating layer is substantially planar such that a path for electron migration between the first ferromagnetic layer and a second ferromagnetic layer in the tunnel junction is less above the domed areas than above the low areas.
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Abstract
A tunnel junction having a topography and/or interface layers that enhance its magneto-resistance. The topography of the tunnel junction maximizes spin tunneling from areas of ferromagnetic crystalline grains having high polarization and minimizes the effects of defect scattering at grain boundaries. The interface layers enhance magnetic polarization properties of ferromagnetic layers near interfaces to an insulating layer in a tunnel junction.
31 Citations
11 Claims
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1. A method for forming a tunnel junction, comprising the steps of:
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forming a first ferromagnetic layer with an upper surface having a topography which includes a set of domed areas and a set of intervening low areas;
forming an insulating layer over the first ferromagnetic layer such that an upper surface of the insulating layer is substantially planar such that a path for electron migration between the first ferromagnetic layer and a second ferromagnetic layer in the tunnel junction is less above the domed areas than above the low areas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a tunnel junction, comprising the steps of:
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forming a first ferromagnetic layer with an upper surface having a topography which includes a set of domed areas and a set of intervening low areas;
forming a first thin interface layer on the first ferromagnetic layer;
forming an insulating layer on the first thin interface layer wherein the first thin interface layer enhances magnetic polarization properties of the first ferromagnetic layer near an interface between the first ferromagnetic layer and the insulating layer.
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10. A method for forming a tunnel junction, comprising:
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forming a first ferromagnetic layer with an upper surface having a topography which includes a set of domed areas and a set of intervening low areas;
forming a first thin interface layer on the first ferromagnetic layer;
forming an insulating layer on the first thin interface layer, forming a second thin interface layer on the insulating layer; and
forming a second ferromagnetic layer on the second thin interface layer;
wherein the first thin interface layer enhances magnetic polarization properties of the first ferromagnetic layer near an interface between the first ferromagnetic layer and the insulating layer;
wherein the second thin interface layer enhances magnetic polarization properties of the second ferromagnetic layer near an interface between the insulating layer and the second ferromagnetic layer. - View Dependent Claims (11)
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Specification