High mobility FETS using A1203 as a gate oxide

• US 6,511,876 B2
• Filed: 06/25/2001
• Issued: 01/28/2003
• Est. Priority Date: 06/25/2001
• Status: Expired due to Term

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Jamison, Paul C., Gribelyuk, Michael A., Callegari, Alessandro C., Buchanan, Douglas A., Neumayer, Deborah Ann
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Vesperman, William C
• Application Number:
  US09/888,777
• Publication Number:
  US 20020197789A1
• Time in Patent Office: 582 Days
• Field of Search: 438/240, 438/287, 438/785, 438/909, 438/591, 438/393, 438/763, 438/624
• US Class Current: 438/240
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/31616 Deposition of Al2O3
• CPC Class Codes: H01L 21/3162 on a silicon body
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A method of forming a high-k dielectric material which exhibits a substantially lower amount of trap charge within a gate stack region is provided. The method maintains high-temperatures (250° C. or above) such that the substrate wafer is not cooled during the various processing steps. Such a method leads to the formation of a high-k dielectric material which does not exhibit a hysteric behavior in a capacitance-voltage curve as well as an increased mobility on FETs using conventional CMOS processing.

Claims

1. A method of forming a high-k dielectric material comprising the steps of:

(a) placing a substrate in a first chamber;

(b) forming an interfacial dielectric layer on an upper surface of said substrate at a temperature of about 300°

C. or above;

(c) transferring said substrate from said first chamber to a second chamber in a controlled gaseous ambient or vacuum, while maintaining said substrate at a temperature of about 300°

C. or above; and

(d) forming a high-k dielectric material having a dielectric constant of 4.0 or more atop said interfacial dielectric layer.

2. The method of claim 1 wherein said substrate comprises a semiconductor material selected from the group consisting of Si, Ge, SiGe, GaAs, InAs, InP, Si/Si, Si/SiGe and silicon-on-insulators.

3. The method of claim 1 wherein said substrate is Si.

4. The method of claim 1 wherein said substrate is treated so as to form a hydrogen terminated surface layer on the substrate prior to performing step (b).

5. The method of claim 4 wherein said substrate is treated with DHF.

6. The method of claim 1 wherein said temperature of said interfacial dielectric layer formation is from about 650°

to about 1200°

C.

7. The method of claim 1 wherein said interfacial dielectric layer is an oxide, nitride, oxynitride or mixtures and multilayers thereof.

8. The method of claim 7 wherein said interfacial dielectric layer is an oxynitride that is formed in the presence of an oxygen/nitrogen-containing ambient which comprises NO, NO₂, a N₂ and O₂ admixture or N₂O.

9. The method of claim 8 wherein said oxygen/nitrogen-containing ambient is admixed with an inert gas.

10. The method of claim 9 wherein said oxygen/nitrogen-containing ambient comprises from about 2% to about 20% NO and said inert gas is N₂.

11. The method of claim 10 wherein said interfacial dielectric layer is formed at a temperature of from about 600°

to about 900°

C.

12. The method of claim 1 wherein said interfacial dielectric layer is formed under rapid thermal conditions or furnace conditions.

13. The method of claim 12 wherein said rapid thermal conditions include a heating time of about 120 seconds or less.

14. The method of claim 13 wherein said rapid thermal conditions include a heating time of from about 5 to about 60 seconds.

15. The method of claim 12 wherein said furnace conditions include a heating time of about 2 minutes or greater.

16. The method of claim 15 wherein said furnace conditions include a heating time of about 5 to about 10 minutes.

17. The method of claim 1 wherein said temperature during said transferring step is from about 300°

to about 700°

C.

18. The method of claim 1 wherein said controlled gaseous ambient comprises He, Ar, N₂, Kr, Xe, Ne or mixtures thereof.

19. The method of claim 18 wherein said controlled gaseous ambient comprises N₂.

20. The method of claim 1 wherein said high-k dielectric has a dielectric constant of from about 7.0 or above.

21. The method of claim 1 wherein said high-k dielectric is a dielectric material selected from the group consisting of metal oxides, metal nitrides, metal silicides, perovskite-type oxides and combinations or multilayers thereof.

22. The method of claim 21 wherein said high-k dielectric is a metal oxide selected from the group consisting of Al₂O₃, HfO₂, ZrO₂ and Ta₂O₅.

23. The method of claim 22 wherein said metal oxide is Al₂O₃.

24. The method of claim 1 wherein said high-k dielectric is formed by a deposition process selected from the group consisting of chemical vapor deposition (CVD, plasma-assisted CVD, evaporation, chemical solution deposition, atomic layer deposition and metal oxide CVD.

25. The method of claim 1 wherein said high-k dielectric is formed at a temperature of from about 250°

to about 700°

C.

26. The method of claim 1 further comprising transferring said semiconductor substrate having said interfacial dielectric layer and said high-k dielectric to a third reactor chamber, wherein said transferring is carried out in a controlled gaseous ambient or vacuum, while maintaining said substrate at a temperature of about 300°

C. or above.

27. The method of claim 25 wherein said conductive material is polysilicon or amorphous silicon.

28. The method of claim 26 wherein a gate contact is formed atop said high-k dielectric in said third reactor chamber.

29. The method of claim 28 wherein said gate contact comprises a conductive material.

30. The method of claim 29 wherein said conductive material comprises polysilicon, amorphous silicon, elemental metals that are conductive, alloys of elemental metals that are conductive, silicides or nitrides of elemental conductive metals or combinations thereof.

31. The method of claim 26 further comprising cooling said substrate and removing said substrate containing said interfacial layer, said high-k dielectric, and said gate contact from said third reactor chamber.

32. The method of claim 31 further comprising patterning said interfacial dielectric layer, said high-k dielectric and said gate contact.

33. The method of claim 1 further comprising the step of cooling said substrate, transferring said substrate to a separate system, and forming a gate contact atop said high-k dielectric material.

34. A method of forming a high-k dielectric material comprising the steps of:

(a) placing a substrate having a surface layer terminated with hydrogen in a first chamber;

(b) forming an interfacial dielectric layer on an upper surface of said substrate at a temperature of about 300°

C. or above;

(c) transferring said substrate from said first chamber to a second chamber in a controlled gaseous ambient, while maintaining said substrate at a temperature of about 300°

C. or above; and

(d) forming a high-k dielectric material having a dielectric constant of 4.0 or more atop said interfacial dielectric layer, wherein said high-k dielectric is a metal oxide.

35. The method of claim 34 wherein said metal oxide is selected from the group consisting of Al₂O₃, HfO₂, ZrO₂ and Ta₂O₅.

36. The method of claim 35 wherein said metal oxide is Al₂O₃.

37. The method of claim 34 wherein said metal oxide is formed by atomic layer deposition or metal oxide chemical vapor deposition.

38. A method of forming a capacitor comprising the steps of:

(a) forming a first plate electrode on a surface of a substrate within a first reactor chamber;

(b) forming an interfacial dielectric layer on an upper surface of said first plate electrode at a temperature of about 300°

C. or above;

(c) transferring said substrate from said first chamber to a second chamber in a controlled gaseous ambient or vacuum, while maintaining said substrate at a temperature of about 300°

C. or above;

(d) forming a high-k dielectric material having a dielectric constant of 4.0 or more atop said interfacial dielectric layer, and

(e) forming a second plate electrode on a surface of said high-k dielectric.