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High mobility FETS using A1203 as a gate oxide

  • US 6,511,876 B2
  • Filed: 06/25/2001
  • Issued: 01/28/2003
  • Est. Priority Date: 06/25/2001
  • Status: Expired due to Term
First Claim
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1. A method of forming a high-k dielectric material comprising the steps of:

  • (a) placing a substrate in a first chamber;

    (b) forming an interfacial dielectric layer on an upper surface of said substrate at a temperature of about 300°

    C. or above;

    (c) transferring said substrate from said first chamber to a second chamber in a controlled gaseous ambient or vacuum, while maintaining said substrate at a temperature of about 300°

    C. or above; and

    (d) forming a high-k dielectric material having a dielectric constant of 4.0 or more atop said interfacial dielectric layer.

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