Controlled cleavage process using pressurized fluid

• US 6,511,899 B1
• Filed: 05/06/1999
• Issued: 01/28/2003
• Est. Priority Date: 05/12/1997
• Status: Expired due to Term

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Cheung, Nathan
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LATTIN, CHRISTOPHER W
• Application Number:
  US09/306,692
• Time in Patent Office: 1,363 Days
• Field of Search: 438/455, 438/515, 438/458, 438/459, 438/900
• US Class Current: 438/515
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B81C 2201/0191 Transfer of a layer from a carrier wafer to a device wafer
• CPC Class Codes: B81C 2201/0192 by cleaving the carrier wafer
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/7624 using semiconductor on insulator [SOI] technology H01L21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L21/84; silicon on sapphire [SOS] technology H01L21/86
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/7813 leaving a reusable substrate, e.g. epitaxial lift off
• CPC Class Codes: Y10S 117/915 Separating from substrate
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10S 438/974 Substrate surface preparation
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face
• CPC Class Codes: Y10T 156/1158 Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
• CPC Class Codes: Y10T 156/19 Delaminating means
• CPC Class Codes: Y10T 428/21 Circular sheet or circular blank
• CPC Class Codes: Y10T 428/24893 : including particulate material
• CPC Class Codes: Y10T 428/249956 : Void-containing component is inorganic

Abstract

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Claims

1. A process for forming a multilayered substrate, said process comprising steps of:

providing a multilayered substrate, said substate comprising a substrate portion having a release layer disposed at a selected depth to define a substrate material to be removed above said selected depth; and

providing a first energy from a non-solid source to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.

2. The process of claim 1, wherein said first energy from a non-solid source is selected from a static source or a fluid jet source.

3. The process of claim 1, wherein said first energy from a non-solid source is directed to said selected depth to initiate said controlled cleaving action.

4. The process of claim 1, wherein said first energy from a non-solid source is derived from a group consisting of:

a compressed gas, an electrical energy source, a mechanical energy source, a chemical source, and thermal energy.

5. The process of claim 1, wherein said substrate is a silicon substrate having <

100>

crystal orientation.

6. The process of claim 1, wherein said release layer is defined by a concentration of particles.

7. The process of claim 6, wherein said particles are implanted into said substrate using a plasma immersion ion implantation technique.

8. The process of claim 6, wherein said particles are implanted into said substrate using a beam line ion implantation technique.

9. The process of claim 6, wherein said particles are hydrogen material.

10. The process of claim 7, wherein said particles consist essentially of hydrogen ions.

11. The process of claim 10, wherein said particles are derived essentially from hydrogen.