Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp

• US 6,512,248 B1
• Filed: 10/19/2000
• Issued: 01/28/2003
• Est. Priority Date: 10/19/1999
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Showa Denko KK
• Inventors: Nabekura, Wataru, Takeuchi, Ryouichi, Hoshina, Takaharu, Udagawa, Takashi, Mitani, Kazuhiro
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/691,057
• Time in Patent Office: 831 Days
• Field of Search: 257/81, 257/99
• US Class Current: 257/81
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.

Claims

1. A semiconductor light-emitting device comprising:

a semiconductor substrate having a rear surface on which a first electrode is formed;

a semiconductor layer including a light-emitting portion, that is formed on said semiconductor substrate;

dispersed electrodes individually formed on a part of a surface of said semiconductor layer, said dispersed electrodes making ohmic contact with said semiconductor layer;

dispersed electrodes individually formed on a part of a surface of said semiconductor layer, said dispersed electrodes making ohmic contact with said semiconductor layer;

a transparent conductive film formed so as to cover the surface of said semiconductor layer and said dispersed electrodes, said transparent conductive film electrically conducting with said dispersed electrodes; and

a pad electrode formed on a part of a surface of said transparent conductive film, said pad electrode electrically conducting with the transparent conductive film,

wherein said dispersed electrodes have a total plane area smaller than a plane area of said pad electrode.

2. A semiconductor light-emitting device comprising:

a semiconductor substrate having a rear surface on which a first electrode is formed;

a semiconductor layer including a light-emitting portion, that is formed on said semiconductor substrate;

dispersed electrodes individually formed on a part of a surface of said semiconductor layer, said dispersed electrodes making ohmic contact with said semiconductor layer;

a transparent conductive film formed so as to cover the surface of said semiconductor layer and said dispersed electrodes, said transparent conductive film electrically conducting with said dispersed electrodes; and

a pad electrode formed on a part of a surface of said transparent conductive film, said pad electrode electrically conducting with the transparent conductive film,

wherein said dispersed electrodes have a total plane area in a range of 3% to 30% of an effective light-emitting area.

3. An electrode for a semiconductor light-emitting device comprising:

dispersed electrodes formed on a part of a surface of a semiconductor layer including a light-emitting portion to make ohmic contact with said semiconductor layer;

a transparent conductive film formed to cover the surface of said semiconductor layer and said dispersed electrodes to electrically conduct with said dispersed electrodes; and

a pad electrode formed on a part of a surface of said transparent conductive film to electrically conduct with said transparent conductive film,

wherein said dispersed electrodes have a total plane area smaller than a plane area of said pad electrode.

4. An electrode for a semiconductor light-emitting device comprising:

dispersed electrodes formed on a part of a surface of a semiconductor layer including a light-emitting portion to make ohmic contact with said semiconductor layer;

a transparent conductive film formed to cover the surface of said semiconductor layer and said dispersed electrodes to electrically conduct with said dispersed electrodes; and

a pad electrode formed on a part of a surface of said transparent conductive film to electrically conduct with said transparent conductive film,

wherein said dispersed electrodes have a total plane area in a range of 3 to 30% of an effective light-emitting area.