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Nonvolatile semiconductor memory

  • US 6,512,703 B2
  • Filed: 08/06/2001
  • Issued: 01/28/2003
  • Est. Priority Date: 09/10/1998
  • Status: Expired due to Fees
First Claim
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1. A nonvolatile semiconductor memory comprising:

  • a memory cell array having a memory cell for programming data using an F-N tunneling current;

    a bit line connected to the memory cell;

    a sense amplifier connected to said bit line and having a latch function; and

    means for, when data are to be simultaneously programmed in memory cells corresponding to one page, which are connected to a selected control gate line, applying a first potential to wells in which the memory cells of one page are formed, a second potential to a control gate of each of the memory cells of one page, the first potential to a bit line connected to a selected memory cell of the memory cells of one page, for which programming is to be executed, and an intermediate potential between the first and second potentials to a bit line connected to an unselected memory cell of the memory cells of one page, for which programming is not to be executed.

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