×

Method of making a III-nitride light-emitting device with increased light generating capability

  • US 6,514,782 B1
  • Filed: 12/22/1999
  • Issued: 02/04/2003
  • Est. Priority Date: 12/22/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for fabricating an inverted light emitting device, the method comprising:

  • depositing a III-nitride heterostructure on a growth structure;

    electrically connecting an opaque p-electrode having a specific contact resistance less than 10

    2
    Ω

    cm2 and a light absorption less than 35%, and an n-electrode to a same side of the III-nitride heterostructure; and

    attaching a submount to the p-electrode and the n-electrode;

    wherein light is extracted through the growth structure.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×