Component and method for manufacture

• US 6,514,789 B2
• Filed: 10/26/1999
• Issued: 02/04/2003
• Est. Priority Date: 10/26/1999
• Status: Expired due to Term

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Hughes, Henry G., Osborn, Thor D., Xu, DaXue, Denton, Heidi L.
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Malsawma, Lex H.
• Application Number:
  US09/427,054
• Publication Number:
  US 20020171131A1
• Time in Patent Office: 1,197 Days
• Field of Search: 438/51, 438/55, 438/64, 438/106, 438/107, 438/118, 438/121, 438/125, 438/455, 438/456, 257/704
• US Class Current: 438/106
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

A component (10) includes a substrate (15), a cap wafer (23), and a protection layer (28) formed over a surface of the cap wafer (23). Together, the protection layer (28) and the cap wafer (23) form a cap structure (39) that is bonded to the substrate (15) via a bonding layer (33). An opening (47) is formed in the cap wafer (23) by etching the cap wafer (23). The protection layer (28) provides protection during etching of the cap wafer (23) for the underlying bonding layer (33) and devices (11,12) formed in the substrate (15).

Claims

1. A method for manufacturing a component, comprising:

providing a substrate having interconnect formed thereon;

providing a cap wafer;

disposing a protection layer over a surface of the cap wafer;

disposing a bonding layer over a portion of the protection layer;

using the bonding layer for attaching the cap wafer and protection layer to the substrate; and

forming an opening in the cap wafer and protection layer to expose the interconnect on the substrate after attaching the protection layer to the substrate.

2. The method of claim 1, wherein a micromachined device in the substrate is enclosed within a cavity formed by the bonding layer, the protection layer, and the substrate.

3. The method of claim 1, wherein the step of forming the opening includes etching the cap wafer using a wet etch solution, wherein the protection layer is formed of a material that is resistant to the wet etch solution so that the protection layer serves as an etch stop layer for protecting the bonding layer during etching of the cap wafer.

4. The method of claim 3, further including the step of disposing a masking layer over a portion of a second surface of the cap wafer, wherein portions of the cap wafer not covered by the masking layer are removed during etching of the cap wafer.

5. The method of claim 3, wherein the wet etch solution comprises tetramethylammonium hydroxide (TMAH).

6. The method of claim 1, wherein the bonding layer comprises frit glass, the cap wafer comprises silicon, the substrate comprises silicon, and the protection layer comprises oxide or nitride.

7. The method of claim 1, further including the step of disposing a conductive layer over the surface of the substrate, wherein the opening provides for electrical connection to the conductive layer.

8. A method for manufacturing a component, comprising the steps of:

bonding a cap to a substrate using a bonding material to form a hermetically sealed cavity, wherein the hermetically sealed cavity is formed by the bonding material, the cap and the substrate, the substrate has an interconnect layer formed thereon, and bonding material is frit glass; and

forming an opening in the cap after bonding the cap to the substrate to expose the interconnect layer.

9. The method of claim 8, wherein the step of forming an opening includes etching the cap and further including the step of disposing an etch stop layer over a surface of the cap for protecting the bonding material during etching of the cap.

10. The method of claim 9, wherein the etch stop layer comprises nitride.

11. The method of claim 9, wherein the etch stop layer comprises oxide.