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Sub-cap and method of manufacture therefor in integrated circuit capping layers

  • US 6,515,367 B1
  • Filed: 04/15/2002
  • Issued: 02/04/2003
  • Est. Priority Date: 09/30/2000
  • Status: Expired due to Term
First Claim
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1. An integrated circuit comprising:

  • a semiconductor substrate having a semiconductor device provided thereon;

    a dielectric layer on the semiconductor substrate and having an opening provided therein;

    a barrier layer lining the opening;

    a conductor core over the barrier layer, the conductor core filling the opening and connected to the semiconductor device;

    two sub-caps self-aligned over the conductor core and formed into electromigration reducing compounds with the conductor core; and

    a capping layer over the sub-cap and the dielectric layer.

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