Pixel structure an organic light-emitting diode display device and its manufacturing method

• US 6,515,428 B1
• Filed: 11/24/2000
• Issued: 02/04/2003
• Est. Priority Date: 11/24/2000
• Status: Expired due to Term

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wang, Wen-Chun, Yeh, Yung-Hui, Sheu, Chai-Yuan
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): VO, TUYET THI
• Application Number:
  US09/722,126
• Time in Patent Office: 802 Days
• Field of Search: 315/169.3, 315/169.4, 315/169.1, 313/489, 313/491, 313/504, 313/500, 313/498, 349/108, 349/106, 349/104
• US Class Current: 315/169.3
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

A pixel structure of an active matrix full-color OLED display device and its manufacturing method are provided. The pixel structure of the display device comprises two thin film transistors, a storage capacitor, a color filter, and an OLED device structure constructed on a top surface of a substrate, a black matrix region outside the color filter region and under the thin film transistors. In this pixel, structure of the OLED display device, the OLED device structure and the color filter are integrated in a thin-film-transistor array. This simplifies the process, reduces the leakage of light and increases the contrast of the display device. A white OEL device is used to emit light. A light then passes a color filter to get red, green or blue color of light. Therefore, a full-color OLED is formed. A poly-silicon thin film transistor is used to provide current to the OLED device structure and served as an active drive device. The advantages of the display device include simple fabrication process, high-resolution, high lighting efficiency and wide viewing angle.

Claims

1. A pixel structure of an organic light-emitting diode (OLED) display device comprising:

a substrate having top and bottom surfaces;

a first thin film transistor having a source electrode, a drain electrode and a gate electrode, said source electrode of said first thin film transistor being electrically connected to a data line, and said gate electrode comprising a portion of a gate line;

a second thin film transistor having a source electrode, a drain electrode and a gate electrode, said gate electrode of said second thin film transistor being electrically connected to said drain electrode of said first thin film transistor;

a storage capacitor, said storage capacitor being connected in series with said first thin film transistor and being electrically connected to said gate electrode of said second thin film transistor;

a color filter being formed in the pixel region of said display device;

a black matrix region being deposited under said second thin film transistor and outside said color filter region to reduce the leakage of light and increase the contrast of said display device; and

an OLED device structure comprising an anode electrode layer and a cathode metal layer and being constructed on the top surface of said substrate, said anode electrode of said OLED device structure being electrically connected to said drain electrode of said second thin film transistor and being connected in series with said second thin film transistor, via said color filter to get red, green and blue colors of light to form said OLED device of full color;

wherein said black matrix region are deposited over the top surface of said substrate, said first and second thin film transistors, said storage capacitor and said color filter are all formed above said black matrix region and below said OLED device structure.

2. The pixel structure of an OLED display device as claimed in claim 1, wherein said OLED device structure uses white organic light-emitting diodes or polymer light-emitting diodes as the electroluminescent media.

3. The pixel structure of an OLED display device as claimed in claim 1, wherein said second thin film transistor is a poly-silicon thin film transistor and is used to provide current to said OLED device structure.

4. The pixel structure of an OLED display device as claimed in claim 1, wherein second thin film transistor is used to serve as an active drive device.

5. The pixel structure of an OLED display device as claimed in claim 1, said black matrix region further comprising a metal layer, and a chromium oxide layer or a black resin layer.

6. The pixel structure of an OLED display device as claimed in claim 1, said anode electrode layer of said OLED device structure further comprising a layer of indium-tin-oxide.

7. The pixel structure of an OLED display device as claimed in claim 1, said cathode metal layer of said OLED device structure further comprising an electrode layer of lithium or aluminum.

8. The pixel structure of an OLED display device as claimed in claim 1, wherein said substrate is a transparent insulating substrate.