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Apparatus and methods for collecting global data during a reticle inspection

  • US 6,516,085 B1
  • Filed: 05/03/1999
  • Issued: 02/04/2003
  • Est. Priority Date: 05/03/1999
  • Status: Active Grant
First Claim
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1. A method of inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer, the method comprising:

  • providing a test image of the reticle, the test image having a plurality of test features each having one or more measurable test characteristic values;

    providing a baseline image containing an expected pattern of the test image, the baseline image having a plurality of baseline features each having one or more measurable baseline characteristic values, wherein each measurable baseline characteristic value is expected to match a corresponding one of the measurable test characteristic value;

    comparing at least a first subset and a second subset of the test characteristic values to their corresponding measurable baseline characteristic values such that a plurality of difference values are calculated for each pair of measurable test and baseline characteristic values; and

    during the comparison, collecting statistical information that is determined from at least a second subset of the measurable test characteristic values or the difference values resulting from the comparison, wherein the statistical information includes a standard deviation value of the second subset of the measurable test characteristic values and a median or average value of the second subset of the measurable test characteristic values as a function of a predetermined parameter.

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