Apparatus and methods for collecting global data during a reticle inspection
First Claim
1. A method of inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer, the method comprising:
- providing a test image of the reticle, the test image having a plurality of test features each having one or more measurable test characteristic values;
providing a baseline image containing an expected pattern of the test image, the baseline image having a plurality of baseline features each having one or more measurable baseline characteristic values, wherein each measurable baseline characteristic value is expected to match a corresponding one of the measurable test characteristic value;
comparing at least a first subset and a second subset of the test characteristic values to their corresponding measurable baseline characteristic values such that a plurality of difference values are calculated for each pair of measurable test and baseline characteristic values; and
during the comparison, collecting statistical information that is determined from at least a second subset of the measurable test characteristic values or the difference values resulting from the comparison, wherein the statistical information includes a standard deviation value of the second subset of the measurable test characteristic values and a median or average value of the second subset of the measurable test characteristic values as a function of a predetermined parameter.
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Abstract
Disclosed is a method of inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer. A test image of the reticle is provided, and the test image has a plurality of test characteristic values. A baseline image containing an expected pattern of the test image is also provided. The baseline image has a plurality of baseline characteristic values that correspond to the test characteristic values. The test characteristic values are compared to the baseline characteristic values such that a plurality of difference values are calculated for each pair of test and baseline characteristic values. Statistical information is also collected.
34 Citations
29 Claims
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1. A method of inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer, the method comprising:
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providing a test image of the reticle, the test image having a plurality of test features each having one or more measurable test characteristic values;
providing a baseline image containing an expected pattern of the test image, the baseline image having a plurality of baseline features each having one or more measurable baseline characteristic values, wherein each measurable baseline characteristic value is expected to match a corresponding one of the measurable test characteristic value;
comparing at least a first subset and a second subset of the test characteristic values to their corresponding measurable baseline characteristic values such that a plurality of difference values are calculated for each pair of measurable test and baseline characteristic values; and
during the comparison, collecting statistical information that is determined from at least a second subset of the measurable test characteristic values or the difference values resulting from the comparison, wherein the statistical information includes a standard deviation value of the second subset of the measurable test characteristic values and a median or average value of the second subset of the measurable test characteristic values as a function of a predetermined parameter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A computer readable medium containing program instructions for inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer, the computer readable medium comprising:
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computer readable code for providing a test image of the reticle, the test image having a plurality of test features each having one or more measurable test characteristic values;
computer readable code for providing a baseline image containing an expected pattern of the test image, the baseline image having a plurality of baseline features each having one or more measurable baseline characteristic values, wherein each measurable baseline characteristic value is expected to match a corresponding one of the measurable test characteristic value;
computer readable code for comparing at least a first subset and a second subset of the test characteristic values to their corresponding measurable baseline characteristic values such that a plurality of difference values are calculated for each pair of measurable test and baseline characteristic values;
computer readable code for during the comparison, collecting statistical information that is determined from at least a second subset of the measurable test characteristic values or the difference values resulting from the comparison, wherein the statistical information includes a standard deviation value of the second subset of the measurable test characteristic values and a median or average value of the second subset of the measurable test characteristic values as a function of a predetermined parameter; and
a computer readable medium for storing the computer readable codes.
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Specification