Grain growth of electrical interconnection for microelectromechanical systems (MEMS)

• US 6,516,671 B2
• Filed: 01/05/2001
• Issued: 02/11/2003
• Est. Priority Date: 01/06/2000
• Status: Active Grant

• Current Assignee: Rosemount Incorporated (Emerson Electric Company)
• Original Assignee: Rosemount Incorporated (Emerson Electric Company)
• Inventors: Romo, Mark G., Toy, Adrian C., Sittler, Fred C., Rud, Stanley E. Jr., Lutz, Mark A.
• Primary Examiner(s): Oen, William
• Assistant Examiner(s): ALLEN, ANDRE J
• Application Number:
  US09/755,346
• Publication Number:
  US 20030010131A1
• Time in Patent Office: 767 Days
• Field of Search: 737/00--56, 361/283.4
• US Class Current: 73/718
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: G01L 9/0075 using a ceramic diaphragm, e.g. alumina, fused quartz, glass

Abstract

A sensor has an electrical interconnect grown in a cavity between first and second layers that are bonded together. Electrically conductive grain growth material is selectively deposited on at least one of two electrically conductive film interconnect regions that face one another across the cavity. The grain growth material is then grown upon predetermined conditions to form the electrical interconnect between the two interconnect regions. A sensor element deposited in the cavity is electrically coupled between the layers by the interconnect. The grain growth material can be tantalum that is heated after the layers are bonded to grow grains that interconnect the electrically conductive films.

Claims

1. A microelectromechanical system (MEMS) sensor, comprising:

first and second layers that are bonded together and form a cavity between the layers;

first and second electrically conducting films deposited on the first and second layers, the first and second electrically conducting films having first and second interconnect regions facing one another across the cavity;

a sensor element deposited in the cavity and electrically coupled to the first electrically conductive film; and

an electrically conductive grain growth material selectively deposited on at least one of the interconnect regions, and grown upon predetermined conditions to form an electrical interconnect between the first and second interconnect regions.

2. The sensor of claim 1 wherein the first layer includes a first recess that forms at least part of the cavity.

3. The sensor of claim 2 wherein the second layer includes a second recess that forms at least part of the cavity.

4. The sensor of claim 1 wherein the electrically conductive grain growth material comprises tantalum.

5. The sensor of claim 1 further comprising a spacer layer bonded between the first and second layers and forming at least part of the cavity.

6. The sensor of claim 1 wherein the electrically conductive grain growth material is deposited on one of the first and second interconnect regions.

7. The sensor of claim 1 wherein the electrically conductive grain growth material is deposited on both the first and the second interconnect regions.

8. The sensor of claim 1 wherein at least one of the first and second layers includes a mesa aligned with one of the first and second interconnect regions.

9. The sensor of claim 1 wherein at least one of the first and second layers includes a depression aligned with one of the first and second interconnect regions, wherein a supply of the grain growth material is deposited in the depression.

10. The sensor of claim 1 wherein the first and second layers are bonded together by contact bonding.

11. The sensor of claim 1 wherein the first and second layers are bonded together by direct bonding.

12. The sensor of claim 1 wherein the first and second layers are bonded together by fusion bonding.

13. The sensor of claim 1 wherein the first and second layers are bonded together by reaction bonding.

14. The sensor of claim 1 wherein the first and second layers are bonded together by a sintered bond solder.

15. The sensor of claim 1 wherein the first and second layers are bonded together with anodic bonding.

16. The sensor of claim 1 wherein the sensor element includes a pressure sensor element.

17. The sensor of claim 16 wherein the pressure sensor comprises a capacitive pressure sensor element.

18. The sensor of claim 17 including the capacitive pressure sensor element being formed of the same material as the electrically conductive film.

19. The sensor of claim 18 wherein the capacitive pressure sensor element comprises a first capacitor electrode deposited on the first layer and a second capacitor electrode deposited on the second layer, the first and second capacitor electrodes being spaced apart across the cavity from one another and adapted to sense deflection between the first and second layers.

20. The sensor of claim 19 wherein one of the first and second electrically conductive films includes feedthrough leads that extends from inside the cavity to electrical contact pads on an external surface of the capacitive pressure sensor.

21. The sensor of claim 20 wherein the electrical interconnect connects the first capacitor electrode to a feedthrough lead on the second layer.

22. The sensor of claim 21 wherein the sensor has an elongated shape extending from a first end including the first and second capacitive electrodes to a second end including the feedthrough lead.

23. The sensor of claim 22 wherein the sensor body includes a central region between the first and second ends adapted for mounting the sensor.

24. The sensor of claim 23 wherein the cavity extends into the central region and the cavity in the central region has a narrower width than width of the cavity in the first end.

25. The sensor of claim 23 wherein the cavity extends into the central region and the cavity in the central region includes a support mesa extending between the first and second layers.

26. The sensor of claim 21 further comprising a feedthrough seal formed over the leads between the cavity and the electrical contact pads.

27. The sensor of claim 18 further including a temperature sensor element deposited in the cavity.

28. The sensor of claim 18 wherein the first and second layers are bonded together by contact bonding and the sensor is heated to improve the contact bond between the first and second layers.

29. The sensor of claim 1 wherein the first and second layers are formed substantially of a material selected from the group:

alumina, silicon, quartz, spinel, glass, crystalline ceramic.

30. The sensor of claim 1 wherein the first and second layers are each formed of single crystal alumina.

31. A pressure transmitter, comprising a MEMS sensor according to claim 1.

32. The pressure transmitter of claim 31 further comprising an process fluid isolator coupling pressure to the MEMS sensor.

33. The sensor of claim 1 wherein the grown growth material comprises a metal.

34. The sensor of claim 1 wherein the grown growth material comprises a metal alloy.

35. A pressure sensor, comprising:

first and second layers bonded together by contact bond to form a pressure sensor body having a cavity formed between the first and second layers;

electrically conducting film selectively deposited in the cavity to sense deflection of the sensor body due to pressure; and

electrically conductive grain growth material grown to form an electrical interconnection.

36. A pressure sensor, comprising:

a sensor body assembled from at least first and second layers joined together with a contact bond, the sensor body forming a cavity between facing surfaces of the first and second layers;

a sensor element sensing deflection of the sensor body, the sensor element comprising electrically conducting film selectively deposited on one of the facing surfaces;

a lead deposited on the other of the facing surfaces, which lead is adapted to extend from the cavity; and

means for interconnecting the sensing electrically conducting film and the lead including a electrically conductive grain growth material deposit placed on at least one of the electrically conducting film and the lead that upon predetermined condition grows to form an interconnection between the sensing electrically conducting film and the lead.

37. A microelectromechanical system (MEMS), comprising:

a body assembled from at least first and second layers joined together, the body forming a cavity between facing surfaces of the first and second layers;

a first electrical conductor deposited on one of the facing surfaces;

a second electrical conductor deposited on the other of the facing surfaces; and

an electrically conductive grain growth material deposit placed on at least one of the conductors that upon predetermined condition grows grains to form an interconnection between the conductors.

38. The device of claim 37 wherein the body further includes a mesa extending into the cavity and at least part of the electrically conductive grain growth material is deposited on the mesa.

39. The device of claim 38 wherein a first portion of the electrically conductive grain growth material is deposited on the first layer and a second portion of the electrically conductive grain growth material is deposited on the second layer opposite the first portion.

40. The device of claim 37 wherein the device is heated to effect growth of the electrically conductive grain growth material to form the interconnection.

41. The device of claim 37 wherein the body is formed substantially of a material selected from the group consisting of alumina, silicon, quartz, spinel, glass, and crystalline ceramic.

42. The device of claim 37 wherein the first and second layers are each formed of single crystal alumina.