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Grain growth of electrical interconnection for microelectromechanical systems (MEMS)

  • US 6,516,671 B2
  • Filed: 01/05/2001
  • Issued: 02/11/2003
  • Est. Priority Date: 01/06/2000
  • Status: Active Grant
First Claim
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1. A microelectromechanical system (MEMS) sensor, comprising:

  • first and second layers that are bonded together and form a cavity between the layers;

    first and second electrically conducting films deposited on the first and second layers, the first and second electrically conducting films having first and second interconnect regions facing one another across the cavity;

    a sensor element deposited in the cavity and electrically coupled to the first electrically conductive film; and

    an electrically conductive grain growth material selectively deposited on at least one of the interconnect regions, and grown upon predetermined conditions to form an electrical interconnect between the first and second interconnect regions.

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