Grain growth of electrical interconnection for microelectromechanical systems (MEMS)
First Claim
1. A microelectromechanical system (MEMS) sensor, comprising:
- first and second layers that are bonded together and form a cavity between the layers;
first and second electrically conducting films deposited on the first and second layers, the first and second electrically conducting films having first and second interconnect regions facing one another across the cavity;
a sensor element deposited in the cavity and electrically coupled to the first electrically conductive film; and
an electrically conductive grain growth material selectively deposited on at least one of the interconnect regions, and grown upon predetermined conditions to form an electrical interconnect between the first and second interconnect regions.
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Accused Products
Abstract
A sensor has an electrical interconnect grown in a cavity between first and second layers that are bonded together. Electrically conductive grain growth material is selectively deposited on at least one of two electrically conductive film interconnect regions that face one another across the cavity. The grain growth material is then grown upon predetermined conditions to form the electrical interconnect between the two interconnect regions. A sensor element deposited in the cavity is electrically coupled between the layers by the interconnect. The grain growth material can be tantalum that is heated after the layers are bonded to grow grains that interconnect the electrically conductive films.
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Citations
42 Claims
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1. A microelectromechanical system (MEMS) sensor, comprising:
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first and second layers that are bonded together and form a cavity between the layers;
first and second electrically conducting films deposited on the first and second layers, the first and second electrically conducting films having first and second interconnect regions facing one another across the cavity;
a sensor element deposited in the cavity and electrically coupled to the first electrically conductive film; and
an electrically conductive grain growth material selectively deposited on at least one of the interconnect regions, and grown upon predetermined conditions to form an electrical interconnect between the first and second interconnect regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A pressure sensor, comprising:
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first and second layers bonded together by contact bond to form a pressure sensor body having a cavity formed between the first and second layers;
electrically conducting film selectively deposited in the cavity to sense deflection of the sensor body due to pressure; and
electrically conductive grain growth material grown to form an electrical interconnection.
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36. A pressure sensor, comprising:
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a sensor body assembled from at least first and second layers joined together with a contact bond, the sensor body forming a cavity between facing surfaces of the first and second layers;
a sensor element sensing deflection of the sensor body, the sensor element comprising electrically conducting film selectively deposited on one of the facing surfaces;
a lead deposited on the other of the facing surfaces, which lead is adapted to extend from the cavity; and
means for interconnecting the sensing electrically conducting film and the lead including a electrically conductive grain growth material deposit placed on at least one of the electrically conducting film and the lead that upon predetermined condition grows to form an interconnection between the sensing electrically conducting film and the lead.
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37. A microelectromechanical system (MEMS), comprising:
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a body assembled from at least first and second layers joined together, the body forming a cavity between facing surfaces of the first and second layers;
a first electrical conductor deposited on one of the facing surfaces;
a second electrical conductor deposited on the other of the facing surfaces; and
an electrically conductive grain growth material deposit placed on at least one of the conductors that upon predetermined condition grows grains to form an interconnection between the conductors. - View Dependent Claims (38, 39, 40, 41, 42)
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Specification