Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operation
First Claim
1. A method of calibrating a rapid thermal process system comprising:
- siliciding in said rapid thermal process system a wafer comprising a silicon semiconductor substrate having a refractory metal layer thereon;
measuring sheet resistance uniformity of said wafer and thereby detecting silicidation phase transition temperature points at the highest value of said sheet resistance uniformity; and
using said temperature points to calibrate said rapid thermal process system.
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Abstract
A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems. The temperature point depend upon the type of refractory metal used and can range from about 200 to 800 ° C.
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Citations
25 Claims
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1. A method of calibrating a rapid thermal process system comprising:
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siliciding in said rapid thermal process system a wafer comprising a silicon semiconductor substrate having a refractory metal layer thereon;
measuring sheet resistance uniformity of said wafer and thereby detecting silicidation phase transition temperature points at the highest value of said sheet resistance uniformity; and
using said temperature points to calibrate said rapid thermal process system. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of resetting a rapid thermal process system to a set temperature point comprising:
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siliciding in said rapid thermal process system a first wafer comprising a silicon semiconductor substrate having a refractory metal layer thereon;
siliciding in said rapid thermal process system a second wafer comprising a silicon semiconductor substrate having same said refractory metal layer thereon;
measuring sheet resistance uniformity of said first and second wafers and thereby detecting silicidation phase transition temperature point at the highest value of said sheet resistance uniformity;
comparing said highest uniformity temperature point to said set temperature point to detect a temperature shift; and
using said temperature shift to reset said rapid thermal process system. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method of temperature matching a plurality of rapid thermal process systems comprising:
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siliciding in each of said plurality of rapid thermal process systems a wafer comprising a silicon semiconductor substrate having a refractory metal layer thereon;
measuring sheet resistance uniformity of each of said wafers and thereby detecting silicidation phase transition temperature points at the highest value of sheet resistance uniformity for each of said rapid thermal process systems; and
using said temperature points to match temperatures for each of said rapid thermal process systems. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification