Etching and cleaning apparatus
First Claim
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1. A plasma processing apparatus comprising:
- a vacuum chamber;
a gas supply equipment for feeding gas into the vacuum chamber;
an evacuation equipment for evacuating the vacuum chamber;
a source of plasma for generating plasma in the vacuum chamber;
a matching circuit;
a substrate electrode on which a substrate is placed;
a high-frequency power source for supplying high-frequency power to the substrate electrode through the matching circuit;
a voltage monitoring conductor provided in the vicinity of the substrate electrode, said voltage monitoring conductor being coupled to the substrate electrode such as to allow high-frequency power supply;
said voltage monitoring conductor AC coupled to said substrate electrode with a DC isolated connection; and
a monitoring circuit for monitoring a direct current potential of the voltage monitoring conductor.
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Abstract
In a plasma processing apparatus wherein plasma is generated in a vacuum chamber 1 thereby to perform etching to a substrate 8 placed on a substrate electrode 7, a voltage monitoring conductor 11 is provided in the vicinity of the substrate electrode 7, and high-frequency power is supplied to both of the substrate electrode 7 and the voltage monitoring conductor 11. Completion of etching operation is detected by monitoring a self-biasing potential generated in this voltage-monitoring conductor 11.
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Citations
4 Claims
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1. A plasma processing apparatus comprising:
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a vacuum chamber;
a gas supply equipment for feeding gas into the vacuum chamber;
an evacuation equipment for evacuating the vacuum chamber;
a source of plasma for generating plasma in the vacuum chamber;
a matching circuit;
a substrate electrode on which a substrate is placed;
a high-frequency power source for supplying high-frequency power to the substrate electrode through the matching circuit;
a voltage monitoring conductor provided in the vicinity of the substrate electrode, said voltage monitoring conductor being coupled to the substrate electrode such as to allow high-frequency power supply;
said voltage monitoring conductor AC coupled to said substrate electrode with a DC isolated connection; and
a monitoring circuit for monitoring a direct current potential of the voltage monitoring conductor. - View Dependent Claims (2, 3, 4)
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Specification
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Current AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
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Original AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
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InventorsOkumura, Tomohiro, Imai, Hiroshi
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Primary Examiner(s)DANG, THI D
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Application NumberUS09/903,069Publication NumberTime in Patent Office580 DaysField of Search156/345.28, 156/345.43, 156/345.44, 156/345.48, 118/723.E, 118/723.I, 118/723.R, 118/712, 323/281, 323/275, 134/1.1US Class Current156/345.28CPC Class CodesC23C 16/4405 Cleaning of reactor or part...H01J 37/321 the radio frequency energy ...H01J 37/32706 Polarising the substrateH01J 37/32935 Monitoring and controlling ...H01J 37/32963 End-point detectionH01L 21/67253 Process monitoring, e.g. fl...
