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Semiconductor device and method for manufacturing

  • US 6,518,092 B2
  • Filed: 02/28/2001
  • Issued: 02/11/2003
  • Est. Priority Date: 07/13/2000
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a semiconductor device comprising steps of:

  • forming an electrode pad and an integrated circuit on top of a substrate;

    forming, on top of said substrate, a covering film which comprises an opening on top of said electrode pad;

    forming, on top of said covering film, a rewiring pattern which is in contact with said electrode pad at said opening;

    forming in a region of said covering film beneath which said integrated circuit is formed and said rewiring pattern is not formed, a trench that does not expose the integrated circuit;

    forming a bump on top of said rewiring pattern; and

    forming a sealing film which covers said rewiring pattern and said trench, in such a way that said sealing film exposes the upper end of said bump.

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