×

Process for manufacturing an SOI wafer by oxidation of buried channels

  • US 6,518,147 B1
  • Filed: 07/25/2000
  • Issued: 02/11/2003
  • Est. Priority Date: 07/26/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A process for manufacturing an SOI wafer, comprising:

  • forming cavities in a substrate of semiconductor material;

    growing an epitaxial layer of monocrystalline type on top of said substrate and said cavities to obtain a wafer of monocrystalline semiconductor material embedding said cavities, said cavities being completely surrounded by said monocrystalline material;

    forming second trenches extending in said epitaxial layer up to said cavities; and

    oxidizing said cavities to form at least one continuous region of buried oxide.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×