Substrate temperature control system and method for controlling temperature of substrate

• US 6,518,548 B2
• Filed: 02/28/2002
• Issued: 02/11/2003
• Est. Priority Date: 04/02/1997
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kanetomo, Masafumi, Murai, Fumio, Yamamoto, Tatuharu, Kaneko, Yutaka, Kuroda, Katsuhiro, Sugaya, Masakazu, Hirasawa, Shigeki, Watanabe, Tomoji
• Primary Examiner(s): PAIK, SANG YEOP
• Application Number:
  US10/084,378
• Publication Number:
  US 20020113056A1
• Time in Patent Office: 348 Days
• Field of Search: 219/443.1, 219/444.1, 219/448.11, 118/715, 118/716, 118/720, 118/721, 118/723.VE, 118/724, 118/725, 118/728, 118/729, 423/253
• US Class Current: 219/444.1
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

Claims

1. A method for treating a substrate by using a substrate temperature control system comprising a temperature control plate having a plurality of projections on the surface and serving to set the temperature of a substrate, and a chuck mechanism to fix the substrate in contact to the plurality of projections by chucking the substrate toward the direction of the temperature control plate, wherein the contact area of the temperature control plate to the substrate is within a range of 60% to 0.5% of the back area of the substrate while the substrate is chucked and fixed on the temperature control plate, comprising the steps of:

coating resist on the substrate; and

fixing the substrate coated with the resist on the projections by using the chuck mechanism and thereafter carrying out the temperature control of the substrate.

2. A method for treating a substrate by using a substrate temperature control system comprising a temperature control plate having a plurality of projections on the surface and serving to set the temperature of a substrate, and a chuck mechanism to fix the substrate in contact to the plurality of projections by chucking the substrate toward the direction of the temperature control plate, wherein the contact area of the temperature control plate to the substrate is within a range of 60% to 0.5% of the back area of the substrate while the substrate is chucked and fixed on the temperature control plate, comprising the steps of:

coating chemical amplified resist on the substrate;

exposing the chemical amplified resist on the substrate to any one selected from ultraviolet ray, electron beam and X ray; and

fixing the substrate coated with the resist on the projections by using the chuck mechanism and thereafter carrying out the temperature control of the substrate.

3. A semiconductor processing system comprising a processing chamber for treating a semiconductor wafer, the processing chamber being equipped with a substrate temperature control system comprising a temperature control plate having a plurality of projections on the surface and serving to set the temperature of a substrate, and a chuck mechanism to fix the substrate in contact to the plurality of projections by chucking the substrate toward the direction of the temperature control plate;

wherein the contact area of the temperature control plate to the substrate is within a range of 60% to 0.5% of the back area of the substrate while the substrate is chucked and fixed on the temperature control plate; and

wherein the substrate is the semiconductor wafer.

4. A semiconductor processing system produced by integrating together a substrate temperature control system and any one of an ultraviolet exposure system, an electron beam system and an X ray exposure system,

wherein the substrate temperature control system comprises a temperature control plate having a plurality of projections on the surface and serving to set the temperature of a substrate, and a chuck mechanism to fix the substrate in contact to the plurality of projections by chucking the substrate toward the direction of the temperature control plate,

wherein the contact area of the temeprature control plate to the substrate is within a range of 60% to 0.5% of the back area of the substrate while the substrate is chucked and fixed on the temperature control plate, and

wherein the substrate to be temperature controlled is a semiconductor wafer coated with resist.

5. A method for fabricating a semiconductor, comprising the steps of:

coating resist on a semiconductor wafer;

carrying out any one of exposure and lithography of the resist on the substrate by selecting any one of ultraviolet ray, electron beam and X ray; and

conducting the post-exposure bake of the semiconductor wafer after any one of the exposure and lithography by using a substrate temperature control system comprising a temperature control plate having a plurality of projections on the surface and serving to set the temperature of a substrate, and a chuck mechanism to fix the substrate in contact to the plurality of projections by chucking the substrate toward the direction of the temperature control plate;

wherein the contact area of the temperature control plate to the substrate is within a range of 60% to 0.5% of the back area of the substrate while the substrate is chucked and fixed on the temperature control plate; and

wherein the substrate is the semiconductor wafer.