Magnetic random access memory with thermally stable magnetic tunnel junction cells

• US 6,518,588 B1
• Filed: 10/17/2001
• Issued: 02/11/2003
• Est. Priority Date: 10/17/2001
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Samant, Mahesh G., Parkin, Stuart S. P.
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Dao H.
• Application Number:
  US09/982,576
• Time in Patent Office: 482 Days
• Field of Search: 204/192.15, 204/192.17, 204/192.2, 257/3, 257/9, 257/295, 257/296, 257/300, 360/113, 360/126, 360/324.11, 365/48, 365/55, 365/66, 365/158, 365/171, 428/65.3, 428/65.7, 428/457, 428/469, 428/693
• US Class Current: 257/3
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic tunnel junction (MTJ) memory cell and a magnetic random access memory (MRAM) incorporating the cells has upper and lower cell electrodes that are formed of bilayers that provide electrical connection between the cells and the copper word and bit lines of the MRAM. The bilayers are formed of a first layer of tantalum nitride or tungsten nitride and a second layer of tantalum or tungsten. In one embodiment TaN is formed directly on the copper and low-resistivity alpha-Ta is formed directly on the TaN. If the cells use an antiferromagnetic layer to fix the moment of the pinned ferromagnetic layer, then Pt—Mn is the preferred material formed over the alpha-Ta. The bilayer can function as a lateral electrode to connect a horizontally spaced-apart cell and a copper stud in the MRAM.

Claims

1. A magnetic tunnel junction cell comprising:

an electrically conductive underlayer comprising a first layer selected from the group consisting of a tantalum nitride and a tungsten nitride and a second layer selected from the group consisting of tantalum and tungsten located on and in contact with the first layer;

a pinned ferromagnetic layer on the second layer of the underlayer;

a free ferromagnetic layer having its magnetic moment free to rotate in the presence of an applied magnetic field;

a tunnel barrier layer located between the pinned ferromagnetic layer and the free ferromagnetic layer; and

an electrically conductive capping layer on the free ferromagnetic layer, the capping layer comprising a first layer selected from the group consisting of a tantalum nitride and a tungsten nitride and a second layer selected from the group consisting of tungsten and tantalum located on and in contact with the first layer, the first layer of the capping layer being located on and in contact with the free ferromagnetic layer.

2. The magnetic tunnel junction cell of claim 1 wherein the first layer of the underlayer is tantalum nitride having tantalum present between 33 and 50 atomic percent and wherein the second layer of the underlayer is the alpha phase of tantalum.

3. The magnetic tunnel junction cell of claim 1 further comprising a layer of antiferromagnetic material between the second layer of the underlayer and the pinned ferromagnetic layer, the pinned ferromagnetic layer'"'"'s moment being fixed by being exchange biased with the antiferromagnetic layer.

4. The magnetic tunnel junction cell of claim 3 wherein the antiferromagnetic material is selected from the group consisting of an alloy comprising Ir and Mn and an alloy comprising Pt and Mn.

5. The magnetic tunnel junction cell of claim 1 wherein the pinned ferromagnetic layer comprises two ferromagnetic films separated by an antiferromagnetically coupling spacer film, the magnetic moments of the two ferromagnetic films being oriented antiparallel.

6. A magnetic tunnel junction cell comprising:

a substrate;

an electrically conductive underlayer comprising a bilayer of a tantalum nitride layer on the substrate and a layer of alpha-phase tantalum on and in contact with the tantalum nitride layer;

a layer of antiferromagnetic material on the tantalum layer of the underlayer, the antiferromagnetic material being an alloy comprising Pt and Mn;

a pinned ferromagnetic layer on and in contact with the antiferromagnetic layer and whose magnetic moment is pinned by being exchange biased with the antiferromagnetic layer;

a free ferromagnetic layer having its magnetic moment free to rotate in the presence of an applied magnetic field;

a tunnel barrier layer located between the pinned ferromagnetic layer and the free ferromagnetic layer; and

an electrically conductive capping layer comprising a bilayer of a tantalum nitride layer on the free ferromagnetic layer and a layer of alpha-phase tantalum on and in contact with the tantalum nitride layer.

7. The magnetic tunnel junction cell of claim 6 further comprising a first line of copper on the substrate beneath and in contact with the tantalum nitride layer of the underlayer and a second line of copper on and in contact with the tantalum layer of the capping layer.

8. A magnetic memory array of magnetic tunnel junction memory cells comprising:

a planar silicon substrate;

insulating material formed on the substrate;

a first set of copper lines in the insulating material and spaced vertically from the planar substrate, the first set of lines being electrically connected to regions of the substrate;

a second set of copper lines in the insulating material and spaced vertically from the planar substrate and from the first set of copper lines, the spacing between the first and second sets of lines defining a plurality of intersection regions;

an array of magnetic tunnel junction cells, each cell being near an intersection region and comprising

an electrically conductive bilayer underlayer comprising a tantalum nitride layer electrically connected to one of the lines of the first set and a layer of alpha-phase tantalum on and in contact with the tantalum nitride layer;

a layer of antiferromagnetic material on the tantalum layer of the underlayer, the antiferromagnetic material being an alloy comprising Pt and Mn;

a pinned ferromagnetic layer on and in contact with the antiferromagnetic layer and whose magnetic moment is pinned by being exchange biased with the antiferromagnetic layer;

a free ferromagnetic layer having its magnetic moment free to rotate in the presence of an applied magnetic field;

a tunnel barrier layer located between the pinned ferromagnetic layer and the free ferromagnetic layer; and

an electrically conductive bilayer capping layer comprising a tantalum nitride layer on the free ferromagnetic layer and a layer of alpha-phase tantalum on and in contact with the tantalum nitride layer;

and wherein the tantalum layer of the capping layer is electrically connected to one of the lines of the second set.

9. The memory array of claim 8 further comprising a plurality of electrically conductive studs, each stud being oriented vertically from the planar substrate and located in a via of the insulating material, wherein one of the studs is spaced horizontally from one of the cells, and wherein both the tantalum nitride layer and the tantalum layer of the underlayer extend between and electrically connect said one cell and said one stud.