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Magnetic random access memory with thermally stable magnetic tunnel junction cells

  • US 6,518,588 B1
  • Filed: 10/17/2001
  • Issued: 02/11/2003
  • Est. Priority Date: 10/17/2001
  • Status: Expired due to Term
First Claim
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1. A magnetic tunnel junction cell comprising:

  • an electrically conductive underlayer comprising a first layer selected from the group consisting of a tantalum nitride and a tungsten nitride and a second layer selected from the group consisting of tantalum and tungsten located on and in contact with the first layer;

    a pinned ferromagnetic layer on the second layer of the underlayer;

    a free ferromagnetic layer having its magnetic moment free to rotate in the presence of an applied magnetic field;

    a tunnel barrier layer located between the pinned ferromagnetic layer and the free ferromagnetic layer; and

    an electrically conductive capping layer on the free ferromagnetic layer, the capping layer comprising a first layer selected from the group consisting of a tantalum nitride and a tungsten nitride and a second layer selected from the group consisting of tungsten and tantalum located on and in contact with the first layer, the first layer of the capping layer being located on and in contact with the free ferromagnetic layer.

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