Semiconductor devices

• US 6,518,594 B1
• Filed: 11/16/1999
• Issued: 02/11/2003
• Est. Priority Date: 11/16/1998
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Nakajima, Setsuo, Yamazaki, Shunpei
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): Tran, Thien F
• Application Number:
  US09/441,025
• Time in Patent Office: 1,183 Days
• Field of Search: 257/412, 257/59, 257/72, 257/347, 257/57, 257/64-67, 257/350, 257/351
• US Class Current: 257/59
• CPC Class Codes: G02B 2027/0138 comprising image capture systems, e.g. camera
• CPC Class Codes: G02B 27/017 Head mounted
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed in contact with the first gate electrode and a gate insulating film. LDD region is formed by using the first gate electrode as a mask, and a source region and a drain region are formed by using the second gate electrode as a mask. By removing a portion of the second gate electrode, a structure in which a region where LDD region and the second gate electrode overlap with a gate insulating film interposed therebetween, and a region where LDD region and the second gate electrode do not overlap, is obtained.

Claims

1. A semiconductor device having a pixel area wherein each pixel has an n-channel type thin film transistor, comprising:

a gate electrode comprising a first conductive layer formed over a gate insulating film and a second conductive layer formed on said first conductive layer wherein said second conductive layer extends beyond said first conductive layer so that an extended portion of said second conductive layer is formed on said gate insulating film;

a semiconductor layer comprising a channel forming region, a first impurity region of one conductivity type formed in contact with said channel forming region and a second impurity region of said one conductivity type formed in contact with said first impurity region,

wherein said first impurity region is partially overlapped with said extended portion of said second conductive layer.

2. A semiconductor device according to claim 1 wherein the length of the extended portion of said second conductive layer is 0.1 mm-3 mm.

6. A semiconductor device according to claim 1, 3 or 5 wherein said first impurity region forms an LDD region and said second impurity region forms a source region or a drain region.

8. A semiconductor device according to claim 1 or 5 wherein a storage capacitance comprising a semiconductor layer having same conductivity type as said first impurity region, said gate insulating film and a capacitance line comprising said first conductive layer and said second conductive layer, is formed in contact with said second impurity region.

9. A semiconductor device according to claim 1, 3, or 5 wherein said first conductive layer comprises an element selected from a group consisting of titanium, tantalum, tungsten, molybdenum and an alloy wherein an element selected from said group is a main component.

10. A semiconductor device according to claim 1, 3, or 5 wherein said second conductive layer comprises an element selected from a group consisting of titanium, tantalum, tungsten, molybdenum and an alloy wherein an element selected from said group is a main component.

11. A semiconductor device according to claim 1, 3, or 5 wherein an impurity concentration in said first impurity region is 1×

10¹⁶−

1×

10¹⁹ atoms/cm³.

12. A semiconductor device according to claim 1, 3, or 5 wherein said semiconductor device is selected from a group consisting of a liquid crystal display device of transmission type, reflection type and an electro-luminescence display device.

13. A semiconductor device according to claim 1, 3, or 5 wherein said semiconductor device is selected from a group consisting of a mobile telephone, video camera, mobile information terminal, goggle type display, projection TV, mobile electronic book, personal computer, digital video disk player, digital camera, projector and liquid crystal television set.

15. A semiconductor device according to claim 1, 3, or 5 wherein said first conductive layer comprises a conductive layer (A) formed in contact with said gate insulating film and one or a plurality of conductive layers formed over said conductive layer (A).

16. A semiconductor device according to claim 15, wherein said conductive layer (A) comprises an element selected from a group consisting of titanium, tantalum, tungsten, molybdenum and an alloy wherein an element selected from said group is a main component, and at least one of said one or a plurality of conductive layers comprises an element selected from aluminum or copper or an alloy comprising said element selected from aluminum or copper as a main component.

3. A semiconductor device having at least one CMOS circuit comprising an n-channel type thin film transistor and a p-channel type thin film transistor comprising:

each gate electrode of said n-channel type thin film transistor and said p-channel type thin film transistor comprising a first conductive layer formed over a gate insulating film and a second conductive layer formed on said first conductive layer wherein said second conductive layer extends beyond said first conductive layer so that an extended portion of said second conductive layer is in contact with said gate insulating film;

a semiconductor layer of said n-channel type thin film transistor comprising a first channel forming region, a first impurity region of one conductivity type formed in contact with said first channel forming region and a second impurity region of said one conductivity type formed in contact with said first impurity region;

a semiconductor layer of said p-channel type thin film transistor comprising a second channel forming region, a third impurity region of one conductivity type formed in contact with said channel forming region,

wherein said first impurity region is partially overlapped with the extended portion of said second conductive layer,

wherein said third impurity region is not overlapped with the extended portion of said second conductive layer.

4. A semiconductor device according to claim 3 wherein the length of the extended portion of said second conductive layer is 0.1 mm-3 mm.

7. A semiconductor device according to claim 3 or 5 wherein:

a gate electrode of said p-channel type thin film transistor comprises a first conductive layer formed in contact with a gate insulating film and a second conductive layer formed in contact with said first conductive layer and said gate insulating film;

a semiconductor layer of said p-channel type thin film transistor comprises a channel forming region and a third impurity region of a conductivity type reverse to said one conductivity type formed in contact with said channel forming region.

5. A semiconductor device comprising a pixel area wherein a first n-channel type thin film transistor is formed at each pixel and at least one CMOS circuit comprising a second n-channel type thin film transistor and a p-channel type thin film transistor, comprising:

each gate electrode of said first and second n-channel type thin film transistors and said p-channel type thin film transistor comprising a first conductive layer formed over a gate insulating film and a second conductive film formed on said first conductive layer wherein said second conductive film extends beyond side edges of said gate electrode and an extended portion of said second conductive film contacts said gate insulating film;

a semiconductor layer of said first and second n-channel type thin film transistors comprising a first channel forming region, a first impurity region of one conductivity type formed in contact with said first channel forming region and a second impurity region of said one conductivity type formed in contact with said first impurity region,

a semiconductor layer of said p-channel type thin film transistor comprising a second channel forming region, a third impurity region of one conductivity type formed in contact with said channel forming region,

wherein said first impurity region is partially overlapped with an extended portion of said second conductive layer,

wherein said third impurity region is not overlapped with the extended portion of said second conductive layer.

14. A semiconductor device according to claim 5 wherein the length of the extended portion of said second conductive layer is 0.1 mm-3 mm.

17. A semiconductor device having at least one display device, said display device comprising:

a substrate having an insulating surface;

a plurality of pixels in a matrix over said substrate;

at least one n-channel type thin film transistor provided at each of said pixels, said n-channel type thin film transistor comprising;

a semiconductor film having a pair of impurity regions and a channel region interposed therebetween, and a pair of lightly doped regions between said channel region and said pair of impurity regions;

a gate insulating film formed on said semiconductor film;

a gate electrode formed over said channel region with a gate insulating film interposed therebetween, said gate electrode comprising a first conductive layer formed on said gate insulating film, and a second conductive layer formed on said first conductive film,

wherein said second conductive layer extends beyond side edges of said first conductive layer to contact with said gate insulating film, and an extended portion of said second conductive layer overlaps said pair of lightly doped regions partly.

18. A semiconductor device according to claim 17 wherein said semiconductor device is selected from a group consisting of a liquid crystal display device of transmission type, reflection type and an electro-luminescence display device.

19. A semiconductor device according to claim 17 wherein said semiconductor device is selected from a group consisting of a mobile telephone, video camera, mobile information terminal, goggle type display, projection TV, mobile electronic book, personal computer, digital video disk player, digital camera, projector and liquid crystal television set.

20. A semiconductor device according to claim 17 wherein the length of the extended portion of said second conductive layer is 0.1 mm-3 mm.

21. A semiconductor device having at least one display device, said display device comprising:

a substrate having an insulating surface;

a plurality of pixels in a matrix over said substrate;

at least one first n-channel type thin film transistor provided at each of said pixels;

a driver circuit comprising at least one second n-channel thin film transistor formed over said substrate, said second n-channel type thin film transistor comprising;

a semiconductor film having a pair of impurity regions and a channel region interposed therebetween, and a lightly doped region between said channel region and one of said pair of impurity regions where the other one of said pair of impurity regions is contiguous to said channel region;

a gate insulating film formed on said semiconductor film;

a gate electrode formed over said channel region with a gate insulating film interposed therebetween, said gate electrode comprising a first conductive layer formed on said gate insulating film, and a second conductive layer formed on said first conductive film,

wherein said second conductive layer extends beyond a side edge of said first conductive layer to contact with said gate insulating film, and an extended portion of said second conductive layer overlaps said one of the lightly doped region partly.

22. A semiconductor device according to claim 21 wherein said semiconductor device is selected from a group consisting of a liquid crystal display device of transmission type, reflection type and an electro-luminescence display device.

23. A semiconductor device according to claim 21 wherein said semiconductor device is selected from a group consisting of a mobile telephone, video camera, mobile information terminal, goggle type display, projection TV, mobile electronic book, personal computer, digital video disk player, digital camera, projector and liquid crystal television set.

24. A semiconductor device according to claim 21 wherein the length of the extended portion of said second conductive layer is 0.1 mm-3 mm.

25. A semiconductor device having at least one display device, said display device comprising:

a substrate having an insulating surface;

a plurality of pixels in a matrix over said substrate;

at least one first n-channel type thin film transistor provided at each of said pixels;

a driver circuit comprising at least one second n-channel type thin film transistor formed over said substrate, said second n-channel type thin film transistor comprising;

a semiconductor film having a pair of impurity regions and a channel region interposed therebetween, and a pair of lightly doped regions between said channel region and said pair of impurity regions;

a gate insulating film formed on said semiconductor film;

a gate electrode formed over said channel region with a gate insulating film interposed therebetween, said gate electrode comprising a first conductive layer formed on said gate insulating film, and a second conductive layer formed on said first conductive film,

wherein said second conductive layer extends beyond side edges of said first conductive layer to contact with said gate insulating film, and an extended portion of said second conductive layer overlaps said pair of lightly doped regions partly.

26. A semiconductor device according to claim 25 wherein said semiconductor device is selected from a group consisting of a liquid crystal display device of transmission type, reflection type and an electro-luminescence display device.

27. A semiconductor device according to claim 25 wherein said semiconductor device is selected from a group consisting of a mobile telephone, video camera, mobile information terminal, goggle type display, projection TV, mobile electronic book, personal computer, digital video disk player, digital camera, projector and liquid crystal television set.

28. A semiconductor device according to claim 25 wherein the length of the extended portion of said second conductive layer is 0.1 mm-3 mm.