High sensitive data signal amplifying circuit
First Claim
1. A high sensitive data signal amplifying circuit comprising:
- bit line amplifying means for amplifying data stored at a memory cell and loading the amplified data on one of a bit line and a bit bar line;
column address selecting means for transferring an output signal of the bit line amplifying means depending on a column address signal;
first data signal amplifying means for amplifying a data signal transferred by the column address selecting means, wherein the first data signal amplifying means comprises;
sense amplifying means for amplifying the output signal of the column address selecting means by using a first stand-by signal and an equalizing signal as control signals; and
precharging means for precharging the sense amplifying means by using the first stand-by signal as a control signal;
second data signal amplifying means for amplifying an output signal from the first data signal amplifying means; and
data signal transferring means for transferring an output signal of the second data signal amplifying means to output to buffering means.
1 Assignment
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Accused Products
Abstract
A high sensitive data signal amplifying circuit is capable of amplifying data signals having a small differential voltage by amplifying the data signals transferred from bit line amplifying unit in two stages. The high sensitive data signal amplifying circuit includes: a bit line amplifying unit for amplifying data stored at a memory cell and loading the amplified data on one of a bit line and a bit bar line; a column address selecting unit for transferring an output signal of the bit line amplifying unit depending on a column address signal; a first data signal amplifying unit for amplifying a data signal transferred by the column address selecting unit; a second data signal amplifying unit for amplifying an output signal from the first data signal amplifying unit; and a data signal transferring unit for transferring an output signal of the second data signal amplifying unit to output to a buffering unit.
13 Citations
12 Claims
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1. A high sensitive data signal amplifying circuit comprising:
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bit line amplifying means for amplifying data stored at a memory cell and loading the amplified data on one of a bit line and a bit bar line;
column address selecting means for transferring an output signal of the bit line amplifying means depending on a column address signal;
first data signal amplifying means for amplifying a data signal transferred by the column address selecting means, wherein the first data signal amplifying means comprises;
sense amplifying means for amplifying the output signal of the column address selecting means by using a first stand-by signal and an equalizing signal as control signals; and
precharging means for precharging the sense amplifying means by using the first stand-by signal as a control signal;
second data signal amplifying means for amplifying an output signal from the first data signal amplifying means; and
data signal transferring means for transferring an output signal of the second data signal amplifying means to output to buffering means. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
a first current mirror type sense amplifier for amplifying differential voltage of a first output signal relative to a second output signal of the column address selecting means;
a second current mirror type sense amplifier for amplifying differential voltage of the second output signal relative to the first output signal of the column address selecting means; and
first equalizing means for controlling output signals of the first and the second current mirror type sense amplifiers.
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4. The high sensitive data signal amplifying circuit according to claim 3, wherein the first current mirror sense amplifier comprises:
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first and second PMOS transistors comprising sources coupled to a power voltage and aligned in current mirror type;
a first NMOS transistor comprising a gate connected to the second output signal of the column address selecting means and a drain coupled to a drain of the first PMOS transistor;
a second NMOS transistor comprising a gate connected to the first output signal of the column address selecting means and a drain coupled to a drain of the second PMOS transistor; and
a third NMOS transistor comprising a drain coupled to the sources of the first and the second NMOS transistors and a gate connected to the first stand-by signal, wherein the output signal is outputted from the drain of first PMOS transistor.
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5. The high sensitive data signal amplifying circuit according to claim 3, wherein the second current mirror sense amplifier comprises:
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first and second PMOS transistors comprising sources coupled to a power voltage and having a mirror type alignment;
a first NMOS transistor comprising a gate connected to the first output signal of the column address selecting means and a drain coupled to a drain of the first PMOS transistor;
a second NMOS transistor comprising a gate connected to the second output signal of the column address selecting means and a drain coupled to a drain of the second PMOS transistor; and
a third NMOS transistor comprising a drain coupled to the sources of the first and the second NMOS transistors and a gate connected to the first stand-by signal, wherein the output signal is outputted from the drain of first PMOS transistor.
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6. The high sensitive data signal amplifying circuit according to claim 3, wherein the first equalizing means comprises:
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a third PMOS transistor, comprising a gate connected to the equalizing signal, for coupling the drains of the first and the second PMOS transistors of the first current mirror type sense amplifier;
a fourth PMOS transistor, comprising a gate connected to the equalizing signal, for coupling the drains of the first and the second PMOS transistors of the second current mirror type sense amplifier; and
a fifth PMOS transistor, comprising a gate connected to the equalizing signal, for coupling the output signals of the first and the second current mirror type sense amplifiers.
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7. The high sensitive data signal amplifying circuit according to claim 1, wherein the precharging means comprises:
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a first precharging means for precharging the first current mirror type sense amplifier; and
a second precharging means for precharging the second current mirror type sense amplifier.
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8. The high sensitive data signal amplifying circuit according to claim 7, wherein the first precharging means comprises:
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third and fourth PMOS transistors, each said third and fourth PMOS transistors comprising a source coupled to the power voltage, wherein respective gates and drains of the third and the fourth transistors are coupled to each other;
a fifth PMOS transistor for coupling the drains of the third PMOS transistor and the first PMOS transistor of the first current mirror type sense amplifier, comprising a gate connected to the first stand-by signal; and
a sixth PMOS transistor for coupling the drains of the fourth PMOS transistor and the second PMOS transistor of the first current mirror type sense amplifier, comprising a gate connected to the first stand-by signal.
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9. The high sensitive data signal amplifying circuit according to claim 7, wherein the second precharging means comprises:
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third and fourth PMOS transistors, each said third and fourth PMOS transistors comprising a source coupled to the power voltage, wherein gates and sources of the third and the fourth transistors are coupled to each other;
a fifth EIMOS transistor, comprising a gate connected to the first stand-by signal, for coupling the drains of the third PMOS transistor and the first PMOS transistor of the second current mirror type sense amplifier; and
a sixth PMOS transistor, comprising a gate connected to the first stand-by signal, for coupling the drains of the fourth PMOS transistor and the second PMOS transistor of the second current mirror type sense amplifier.
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10. The high sensitive data signal amplifying circuit according to claim 1, wherein the second data signal amplifying means comprises:
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a latch type sense amplifier for amplifying an output signal of the first data signal amplifying means by using a second stand-by signal as a control signal; and
second equalizing means for controlling an output signal depending on the second stand-by signal.
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11. The high sensitive data signal amplifying circuit according to claim 10, wherein the second equalizing means comprises:
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first and second PMOS transistors, each said first and second PMOS transistors comprising a gate connected to the second stand-by signal, a source coupled to the power voltage and a drain coupled to the output of the latch type sense amplifier; and
a third PMOS transistor, comprising a gate connected to the second stand-by signal, for coupling the drains of the first and the second PMOS transistors.
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12. The high sensitive data signal amplifying circuit according to claim 1, wherein the data signal transferring means comprises:
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first and second inverters for inverting the first and second output signals of the second signal amplifying means;
a first NMOS transistor comprising a gate connected to an output signal of the first inverter, a source coupled to a ground voltage and a drain outputting an output signal to the buffering means; and
a second NMOS transistor comprising a gate connected to an output signal of the second inverter, a source coupled to a ground voltage and a drain outputting an output signal to the buffering means.
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Specification