Method of repairing a low dielectric constant material layer
First Claim
1. A method of repairing a low dielectric constant (low k) material layer, the method comprising:
- providing a semiconductor wafer with a low k material layer;
coating a photoresist layer on the low k material layer;
forming an opening to expose a portion of the low k material layer;
dry etching the low k material layer through the opening to transfer a pattern in the photoresist layer to the low k material layer;
performing an oxygen plasma ashing process to remove the photoresist layer; and
contacting the low k material layer with a hexane solution of alkyl silane comprising an alkyl group and halo substituent;
wherein the hexane solution of alkyl silane comprising the alkyl group and halo substituent is employed to remove Si—
OH bonds formed in the low k layer during the oxygen plasma ashing process to repair damage to the low k material layer caused by the oxygen plasma ashing process, and to enhance a surface of the low k material layer to a hydrophobic surface to prevent moisture adhering to the surface of the low k material layer.
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Accused Products
Abstract
A method of repairing a low dielectric constant (low k) material layer starts with coating a photoresist layer on the low k material layer on a semiconductor wafer. After transferring a pattern of the photoresist layer to the low k material layer, an oxygen plasma ashing process is performed to remove the photoresist layer. Finally, by contacting the low k material layer with a solution of alkyl silane comprising an alkyl group and halo substituent, Si—OH bonds formed in the low k layer during the oxygen plasma ashing process are removed so as to repair damage to the low k material layer caused by the oxygen plasma ashing process, and to enhance a surface of the low k material layer to a hydrophobic surface to prevent moisture adhering to the surface of the low k material layer.
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Citations
16 Claims
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1. A method of repairing a low dielectric constant (low k) material layer, the method comprising:
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providing a semiconductor wafer with a low k material layer;
coating a photoresist layer on the low k material layer;
forming an opening to expose a portion of the low k material layer;
dry etching the low k material layer through the opening to transfer a pattern in the photoresist layer to the low k material layer;
performing an oxygen plasma ashing process to remove the photoresist layer; and
contacting the low k material layer with a hexane solution of alkyl silane comprising an alkyl group and halo substituent;
wherein the hexane solution of alkyl silane comprising the alkyl group and halo substituent is employed to remove Si—
OH bonds formed in the low k layer during the oxygen plasma ashing process to repair damage to the low k material layer caused by the oxygen plasma ashing process, and to enhance a surface of the low k material layer to a hydrophobic surface to prevent moisture adhering to the surface of the low k material layer.- View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of repairing a low dielectric constant (low k) material layer, the method comprising:
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providing a semiconductor wafer with a low k material layer;
coating a photoresist layer on the low k material layer;
forming an opening to expose a portion of the low k material layer;
dry etching the low k material layer through the opening to transfer a pattern in the photoresist layer to the low k material layer;
performing a photoresist ashing process to remove the photoresist layer; and
performing at least one surface repairing process to contact the low k material layer with a hexane solution of alkyl silane comprising an alkyl group and halo substituent;
wherein the hexane solution of alkyl silane comprising the alkyl group and halo substituent is employed to remove Si—
OH bonds formed in the low k layer during the photoresist ashing process, to repair the damage of the low k material layer caused by the photoresist ashing process, and to enhance a surface of the low k material layer to a hydrophobic surface.- View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification