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III-Nitride Light-emitting device with increased light generating capability

  • US 6,521,914 B2
  • Filed: 03/29/2002
  • Issued: 02/18/2003
  • Est. Priority Date: 12/22/1999
  • Status: Expired due to Term
First Claim
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1. A light-emitting device comprising:

  • a heterostructure of III-V material comprising a first light emitting unit;

    the first light emitting unit comprising an active region, an n-type layer and a p-type layer;

    an opaque p-electrode, attached to the p-type layer;

    n-electrode, attached to the n-type layer, interposing portions of the p-electrode; and

    a p-conductive interface and an n-conductive interface, the p-conductive interface affixed to the p-electrode and the n-conductive interface affixed to the n-electrode;

    wherein one of the p-conductive interface and the n-conductive interface includes one or more portions elongated along a first direction.

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