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Semiconductor memory and method for accessing semiconductor memory

  • US 6,522,572 B2
  • Filed: 05/23/2002
  • Issued: 02/18/2003
  • Est. Priority Date: 11/14/1997
  • Status: Expired due to Fees
First Claim
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1. A method of writing data to a semiconductor memory including a memory cell which comprises ferroelectric memory FETs each having a ferroelectric layer disposed between a gate electrode and a semiconductor layer, characterized in that a writing voltage is applied after applying a voltage that is opposite in direction to the writing voltage.

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