Micro-electro-optical mechanical device having an implanted dopant included therein and a method of manufacture therefor
First Claim
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1. A micro-electro-mechanical system (MEMS) optical device, comprising:
- a mirror having a light reflective optical layer containing at least one type of an implanted dopant located over a substrate; and
a mounting substrate on which the mirror is movably mounted.
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Abstract
The present invention provides a micro-electro-mechanical system (MEMS) optical device. The micro-electro-mechanical system (MEMS) optical device includes a mirror having a substrate with an implanted light reflective optical layer thereover, and a mounting substrate on which the mirror is movably mounted. The inclusion of the dopant within the light reflective optical layer increases the tensile stress of the device and tends to correct the concave curvature of the mirror structure toward a desirably flat configuration.
152 Citations
59 Claims
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1. A micro-electro-mechanical system (MEMS) optical device, comprising:
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a mirror having a light reflective optical layer containing at least one type of an implanted dopant located over a substrate; and
a mounting substrate on which the mirror is movably mounted. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
substitutional elements including silicon, bismuth, strontium, barium, cadmium, tungsten, iridium, rhenium, rhodium, ruthenium, cobalt, sulfur, selenium, tellurium, chlorine, iodine, phosphorous;
interstitial elements including boron, carbon, nitrogen oxygen, fluorine and hydrogen;
rare earth group elements including cerium, europium, erbium, lanthanum, neodymium, samarium, terbium; and
gas atoms including helium, neon, argon and krypton.
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14. The micro-electro-mechanical system (MEMS) optical device recited in claim 1 wherein the light reflective optical layer comprises silver.
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15. The micro-electro-mechanical system (MEMS) optical device recited in claim 14 wherein the at least one type of implanted dopant comprises one or more elements selected from the group consisting of silicon, bismuth, strontium, barium, cadmium, chromium, tungsten, nickel, iridium, molybdenum, niobium, rhenium, rhodium, ruthenium, osmium, vanadium, cobalt, sulfur, selenium, tellurium, chlorine, phosphorous, boron, carbon, nitrogen, oxygen, fluorine, hydrogen, cerium, europium, gadolinium, lanthanum, neodymium, samarium, terbium, yttrium, helium, neon, argon and krypton.
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16. The micro-electro-mechanical system (MEMS) optical device recited in claim 1 wherein the light reflective optical layer comprises aluminum.
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17. The micro-electro-mechanical system (MEMS) optical device recited in claim 16 wherein the at least one type of implanted dopant comprises one or more elements selected from the group consisting of gold, barium, bismuth, cadmium, cobalt, chromium, iron, germanium, silicon, hafnium, vanadium, indium, iridium, molybdenum, nickel, lead, titanium, tungsten, palladium, platinum, rhenium, rhodium, ruthenium, sulfur, selenium, tellurium, antimony, tin, strontium, helium, neon, argon, krypton, chlorine, iodine, phosphorous, cerium, dysprosium, erbium, europium, gadolinium, holmium, lanthanum, lutetium, neodymium, samarium, terbium, yttrium, ytterbium, boron, carbon, nitrogen, oxygen, fluorine and hydrogen.
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18. The micro-electro-mechanical system (MEMS) optical device as recited in claim 1 wherein the substrate comprises a material selected from the group consisting of polysilicon, single crystal silicon, silicon nitride, silicon carbide, silicon oxide, diamond film, or any regional and layered combination of these materials.
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19. The micro-electro-mechanical system (MEMS) optical device as recited in claim 1 wherein at least one of the implanted dopants in the light reflective optical layer is in the form of isolated embedded atoms.
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20. The micro-electro-mechanical system (MEMS) optical device as recited in claim 1 wherein at least one of the implanted dopants in the light reflective optical layer is in the form of clusters having a size ranging from about 1 nm to about 1000 nm.
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21. The micro-electro-mechanical system (MEMS) optical device as recited in claim 20 wherein at least one of the implanted dopants in the light reflective optical layer is in the form of clusters having a size ranging from about 1 nm to about 100 nm.
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22. A method of manufacturing a micro-electro-mechanical system (MEMS) optical device, comprising:
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forming a mirror having a light reflective optical layer containing at least one type of an implanted dopant located over a substrate-;
-andforming a mounting substrate on which the mirror is movably mounted. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
substitutional elements including silicon, bismuth, strontium, barium, cadmium, tungsten, iridium, rhenium, rhodium, ruthenium, cobalt, sulfur, selenium, tellurium, chlorine, iodine, phosphorous;
interstitial elements including boron, carbon, nitrogen oxygen, fluorine and hydrogen;
rare earth group elements including cerium, europium, erbium, lanthanum, neodymium, samarium, terbium; and
gas atoms including helium, neon, argon and krypton.
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33. The method recited in claim 22 wherein the light reflective optical layer comprises silver.
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34. The method recited in claim 33 wherein the light reflective optical layer comprises silver and includes an implanted dopant selected from the group consisting of silicon, bismuth, strontium, barium, cadmium, chromium, tungsten, nickel, iridium, molybdenum, niobium, rhenium, rhodium, ruthenium, osmium, vanadium, cobalt, sulfur, selenium, tellurium, chlorine, phosphorous, boron, carbon, nitrogen, oxygen, fluorine, hydrogen, cerium, europium, gadolinium, lanthanum, neodymium, samarium, terbium, yttrium, helium, neon, argon and krypton.
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35. The method recited in claim 22 wherein the light reflective optical layer comprises aluminum.
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36. The method recited in claim 35 wherein the light reflective optical layer comprises aluminum and includes an implanted dopant selected from the group consisting of gold, barium, bismuth, cadmium, cobalt, chromium, iron, germanium, silicon, hafnium, vanadium, indium, iridium, molybdenum, nickel, lead, titanium, tungsten, palladium, platinum, rhenium, rhodium, ruthenium, sulfur, selenium, tellurium, antimony, tin, strontium, helium, neon, argon, krypton, chlorine, iodine, phosphorous, cerium, dysprosium, erbium, europium, gadolinium, holmium, lanthanum, lutetium, neodymium, samarium, terbium, yttrium, ytterbium, boron, carbon, nitrogen, oxygen, fluorine and hydrogen.
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37. The method as recited in claim 22 wherein the substrate is polysilicon.
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38. The method as recited in claim 22 wherein forming a mirror having a light reflective optical layer includes forming a mirror having a dopant located therein that is in the form of isolated embedded atoms.
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39. The method as recited in claim 22 wherein forming a mirror having a light reflective optical layer includes forming a mirror having a dopant located therein that is in the form of clusters having a size ranging from about 1 nm to about 1000 nm.
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40. The method as recited in claim 39 wherein the clusters have a size ranging from about 1 nm to about 100 nm.
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41. The method as recited in claim 39 wherein forming a mirror having a dopant located therein that is in the form of clusters having a size ranging from about 1 nm to about 1000 nm includes subjecting the mirror to a heat treatment below about 400°
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42. The method as recited in claim 22 wherein forming a light reflective optical layer includes forming a light reflective optical layer using a process selected from the group consisting of evaporation, sputtering, electrochemical deposition, chemical vapor deposition, followed by an ion implantation doping process with one or more dopants.
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43. The method as recited in claim 22 wherein forming a light reflective layer includes using an extraction voltage for doping the light reflective layer such that at least 60% of the implanted dopant gets trapped and retained in the light reflective layer, with the remaining dopant penetrating into the substrate.
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44. The method as recited in claim 43 wherein at least 90% of the implanted dopant gets trapped.
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45. The method as recited in claim 43 wherein the extraction voltage is in the range from about 2 KeV to about 1000 KeV.
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46. The method as recited in claim 45 wherein the extraction voltage is in the range from about 10 KeV to about 50 KeV.
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47. The method as recited in claim 22 wherein forming a mirror having at least one type of an implanted dopant includes subjecting the mirror to an ion implantation technique.
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48. The method as recited in claim 22 wherein forming a mirror having at least one type of an implanted dopant includes subjecting the mirror to a shadow mask or lithographic patterning process.
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49. An optical communications system, comprising:
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input/output fiber bundles;
a micro-electro-mechanical structure, comprising;
a mirror having a light reflective optical layer containing at least one type of an implanted dopant located over a substrate; and
a mounting substrate on which the mirror is movably mounted;
imaging lenses interposed between the input/output fiber bundles and the micro-electro-mechanical structure; and
a reflector. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
substitutional elements including silicon, bismuth, strontium, barium, cadmium, tungsten, iridium, rhenium, rhodium, ruthenium, cobalt, sulfur, selenium, tellurium, chlorine, iodine and phosphorous;
interstitial elements including boron, carbon, nitrogen oxygen, fluorine and hydrogen;
rare earth group elements including cerium, europium, erbium, lanthanum, neodymium, samarium, terbium; and
gas atoms including helium, neon, argon and krypton.
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55. The optical communications system recited in claim 49 wherein the light reflective optical layer comprises silver.
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56. The optical communications system recited in claim 55 wherein the at least one type of dopant comprises one or more dopants selected from the group consisting of silicon, bismuth, strontium, barium, cadmium, chromium, tungsten, nickel, iridium, molybdenum, niobium, rhenium, rhodium, ruthenium, osmium, vanadium, cobalt, sulfur, selenium, tellurium, chlorine, phosphorous, boron, carbon, nitrogen, oxygen, fluorine, hydrogen, cerium, europium, gadolinium, lanthanum, neodymium, samarium, terbium, yttrium, helium, neon, argon and krypton.
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57. The optical communications system recited in claim 49 wherein the light reflective optical layer comprises aluminum.
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58. The optical communications system recited in claim 57 wherein the at least one type of dopant comprises one or more dopants selected from the group consisting of gold, barium, bismuth, cadmium, cobalt, chromium, iron, germanium, silicon, hafnium, vanadium, indium, iridium, molybdenum, nickel, lead, titanium, tungsten, palladium, platinum, rhenium, rhodium, ruthenium, sulfur, selenium, tellurium, antimony, tin, strontium, helium, neon, argon, krypton, chlorine, iodine, phosphorous, cerium, dysprosium, erbium, europium, gadolinium, holmium, lanthanum, lutetium, neodymium, samarium, terbium, yttrium, ytterbium, boron, carbon, nitrogen, oxygen, fluorine and hydrogen.
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59. The optical communications system recited in claim 49 that comprises one or more devices selected from the group consisting of:
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a micro-electro-mechanical system (MEMS) optical cross connect system;
an optical power gain equalizer system;
a wavelength division multiplexing telecommunications system;
a light signal switch in an optical communications system; and
a variable optical attenuator in an optical communications system.
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Specification