Integrated transmitter and receiver components for a dual-band transceiver

• US 6,522,895 B1
• Filed: 12/31/1998
• Issued: 02/18/2003
• Est. Priority Date: 12/31/1998
• Status: Expired due to Term

• Current Assignee: Optis Cellular Technology LLC (Brevet Capital)
• Original Assignee: Ericsson, Inc. (Telefonaktiebolaget LM Ericsson)
• Inventors: Montalvo, Antonio
• Primary Examiner(s): Chin, Vivian
• Assistant Examiner(s): Lee, John J
• Application Number:
  US09/224,344
• Time in Patent Office: 1,510 Days
• Field of Search: 455/73, 455/78, 455/82, 455/84, 455/86, 455/317, 455/522, 455/188.1, 455/333, 455/323, 455/456, 455/550, 455/126, 455/552, 455/313, 455/90, 455/553, 455/83
• US Class Current: 455/553.1
• CPC Class Codes: H04B 1/005 adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
• CPC Class Codes: H04B 1/0057 using diplexing or multiplexing filters for selecting the desired band
• CPC Class Codes: H04B 1/006 using switches for selecting the desired band H04B1/0057 takes precedence
• CPC Class Codes: H04B 1/0082 with a common local oscillator for more than one band

Abstract

A transceiver of a dual-band radio is provided that selectively transmits and receives on either of a first frequency and a second frequency wherein the transceiver includes an integrated circuit having a power amplifier configured to amplify signals for transmission on a first frequency, and a low-noise amplifier configured to amplify signals received on the second frequency. The transceiver may further include a second integrated circuit having a power amplifier configured to amplify signals for transmission on a second frequency, and a low-noise amplifier configured to amplify signals received on the first frequency.

Claims

1. A front end for a dual-band radio transceiver comprising:

a first integrated circuit having a first power amplifier configured to amplify signals for transmission in a first frequency band and a first low-noise amplifier configured to amplify signals received in a second frequency band; and

a second integrated circuit having a second power amplifier configured to amplify signals for transmission in said second frequency band and a second low-noise amplifier configured to amplify signals received in said first frequency band.

2. The transceiver front end of claim 1 wherein the transceiver includes a local oscillator, and wherein the first integrated circuit includes a first down-converter connected to the first low-noise amplifier and the local oscillator for mixing a received signal in the second frequency band with a frequency generated by the local oscillator.

3. The transceiver front end of claim 2 wherein the first down-converter comprises a mixer.

4. The transceiver front end of claim 1 wherein the transceiver includes a local oscillator, and wherein the second integrated circuit includes a second down-converter connected to the low-noise amplifier and the local oscillator for mixing a received signal in the first frequency band with a frequency generated by the local oscillator.

5. The transceiver front end of claim 4 wherein the second down-converter comprises a mixer.

6. The transceiver front end of claim 1 wherein the first integrated circuit includes a substrate comprising GaAs.

7. The transceiver front end of claim 1 wherein the second integrated circuit includes a substrate comprising GaAs.

8. A dual-band radio comprising:

a transceiver including first and second integrated circuits;

a first power amplifier configured forming part of said first integrated circuit to amplify signals for transmission in a first frequency band;

a first low-noise amplifier forming a part of the first integrated circuit to amplify signals received in a second frequency band;

a second power amplifier configured forming part of the second integrated circuit to amplify signals for transmission in a second frequency band; and

a second low-noise amplifier forming a part of the second integrated circuit to amplify signals received in a first frequency band.

9. The dual-band radio of claim 8 further comprising a local oscillator, and wherein the first integrated circuit includes a first down-converter connected to the low-noise amplifier and the local oscillator to mix a received signal in the second frequency band with a frequency generated by the local oscillator.

10. The dual-band radio of claim 9 wherein the first down-converter comprises a mixer connected to the low-noise amplifier and the local oscillator.

11. The dual-band radio of claim 9 wherein the second integrated circuit includes a second down-converter connected to the second low-noise amplifier and the local oscillator to convert a received signal in the first frequency band to an intermediate frequency.

12. The dual-band radio of claim 11 wherein the second down-converter comprises a mixer connected to the low-noise amplifier and the local oscillator.

13. The dual-band radio of claim 8 wherein the first integrated circuit includes a substrate comprising GaAs.

14. The dual-band radio of claim 8 wherein the second integrated circuit includes a substrate comprising GaAs.